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Set visibility: public

Ray ·8e1e17626c ·1mo ago ·parent d66f1f4
1 file changed +7−4
page.json+7−4
@@ -38,7 +38,7 @@         "number": "2",         "name": "SW",         "type": "output",-        "description": "Switch node connected to the drain of the internal high-side and low-side MOSFETs. Connect the external power inductor (nominal 1 \u00b5H) between this pin and the output capacitor."+        "description": "Switch node connected to the drain of the internal high-side and low-side MOSFETs. Connect the external power inductor (nominal 1 µH) between this pin and the output capacitor."       },       {         "number": "3",@@ -56,7 +56,7 @@         "number": "5",         "name": "EN",         "type": "input",-        "description": "Enable input (VIH \u2265 1 V, VIL \u2264 0.4 V, IIN \u2264 1 \u00b5A). Drive high to enable the converter, low to place the device in shutdown (ISD < 1 \u00b5A, output discharged via internal ~200 \u03a9 resistor). Must not be left floating."+        "description": "Enable input (VIH ≥ 1 V, VIL ≤ 0.4 V, IIN ≤ 1 µA). Drive high to enable the converter, low to place the device in shutdown (ISD < 1 µA, output discharged via internal ~200 Ω resistor). Must not be left floating."       },       {         "number": "6",@@ -74,7 +74,7 @@         "number": "8",         "name": "PVIN",         "type": "power_in",-        "description": "Power VIN input to the internal high-side MOSFET drain (2.7 V to 6 V, abs-max 7 V). Decouple with a 10-\u00b5F ceramic input capacitor placed as close as possible between PVIN and PGND."+        "description": "Power VIN input to the internal high-side MOSFET drain (2.7 V to 6 V, abs-max 7 V). Decouple with a 10-µF ceramic input capacitor placed as close as possible between PVIN and PGND."       },       {         "number": "9",@@ -154,5 +154,8 @@     "docs/tps62061dsgr-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file