component
TPS62026DGQ
Public Made by Adomby adom
Texas Instruments DC-DC Converters, MSOP-10-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tps62026dgq: specified limits as data (metadata.characteristics, 35 rows from the datasheet)
2 files changed
+470−1
README.md+42@@ -29,6 +29,48 @@ TPS62026DGQ from Texas Instruments, in a MSOP-10-EP. Pinout and pin descriptions | Category | Power Management (PMIC) | | Pins | 11 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Input voltage range | VI | 2.5 | | 6 | V | | 3 |+| Operating quiescent current | IQ | | 18 | 35 | µA | IO = 0 mA, device is not switching | 3 |+| Shutdown supply current | ISD | | 0.1 | 1 | µA | EN = GND | 3 |+| Under-voltage lockout threshold | VUVLO | 1.5 | | 2.3 | V | | 3 |+| EN high level input voltage | VEN | 1.4 | | | V | | 3 |+| EN low level input voltage | VEN | | | 0.4 | V | | 3 |+| EN input bias current | IEN | | 0.01 | 1 | µA | EN = GND or VIN | 3 |+| MODE high level input voltage | V(MODE) | 1.4 | | | V | | 3 |+| MODE low level input voltage | V(MODE) | | | 0.4 | V | | 3 |+| MODE input bias current | I(MODE) | | 0.01 | 1 | µA | MODE = GND or VIN | 3 |+| P-channel MOSFET on-resistance | rDS(ON) | | 115 | 210 | mΩ | VI = VGS = 3.6 V | 3 |+| P-channel MOSFET on-resistance | rDS(ON) | | 145 | 270 | mΩ | VI = VGS = 2.5 V | 3 |+| P-channel leakage current | Ilkg(P) | | | 1 | µA | VDS = 6.0 V | 3 |+| N-channel MOSFET on-resistance | rDS(ON) | | 85 | 200 | mΩ | VI = VGS = 3.6 V | 3 |+| N-channel MOSFET on-resistance | rDS(ON) | | 115 | 280 | mΩ | VI = VGS = 2.5 V | 3 |+| N-channel leakage current | Ikg(N) | | | 1 | µA | VDS = 6.0 V | 3 |+| P-channel current limit | IL | 0.9 | 1.1 | 1.3 | A | 2.5 V < VI < 6.0 V | 3 |+| Oscillator frequency | fS | 1 | 1.25 | 1.5 | MHz | VFB = 0.5 V | 3 |+| Fixed output voltage accuracy (no load) | VO | 0 | | 3 | % | VI = 3.6 V to 6.0 V; IO = 0 mA | 3 |+| Fixed output voltage accuracy (0 to 600 mA) | VO | -3 | | 3 | % | VI = 3.6 V to 6.0 V; 0 mA ≤ IO ≤ 600 mA | 3 |+| Leakage current into SW pin | Ikg(SW) | | 0.1 | 1 | µA | VI > VO, 0 V ≤ VSW ≤ VI | 3 |+| Reverse leakage current into pin SW | Ikg(SW) | | 0.1 | 1 | µA | VI = open; EN = GND; VSW = 6.0 V | 3 |+| Supply voltage | VIN | -0.3 | | 7 | V | | 2 |+| Voltages on EN, MODE, FB, SW | | -0.3 | | | V | | 2 |+| Operating junction temperature range (absolute maximum) | TJ | -40 | | 150 | °C | | 2 |+| Storage temperature range | | -65 | | 150 | °C | | 2 |+| Lead temperature | | | | 260 | °C | soldering, 10 sec | 2 |+| Supply voltage | VI | 2.5 | | 6 | V | | 2 |+| Output current | IO | | | 600 | mA | | 2 |+| Inductor | L | 3.3 | | 10 | µH | | 2 |+| Input capacitor | CI | 10 | | | µF | | 2 |+| Output capacitor | CO | 10 | | | µF | | 2 |+| Operating ambient temperature | TA | -40 | | 85 | °C | | 2 |+| Operating junction temperature | TJ | -40 | | 125 | °C | | 2 |+| Junction-to-ambient thermal resistance, MSOP | RθJA | | 60 | | °C/W | based on a soldered PowerPAD using thermal vias | 2 |+ ## CAD (KiCad official) - Symbol: `TPS62026DGQ`
page.json+428−1@@ -199,6 +199,433 @@ "Package": "MSOP-10-EP", "Category": "Power Management (PMIC)", "Pins": "11"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "092ca3f3b8670f56",+ "rows": [+ {+ "name": "Input voltage range",+ "symbol": "VI",+ "kind": "electrical",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating quiescent current",+ "symbol": "IQ",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 18,+ "max": 35,+ "conditions": "IO = 0 mA, device is not switching",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Shutdown supply current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "EN = GND",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Under-voltage lockout threshold",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "V",+ "min": 1.5,+ "typ": null,+ "max": 2.3,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "EN high level input voltage",+ "symbol": "VEN",+ "kind": "electrical",+ "unit": "V",+ "min": 1.4,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "EN low level input voltage",+ "symbol": "VEN",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "EN input bias current",+ "symbol": "IEN",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.01,+ "max": 1,+ "conditions": "EN = GND or VIN",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "MODE high level input voltage",+ "symbol": "V(MODE)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.4,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "MODE low level input voltage",+ "symbol": "V(MODE)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "MODE input bias current",+ "symbol": "I(MODE)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.01,+ "max": 1,+ "conditions": "MODE = GND or VIN",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-channel MOSFET on-resistance",+ "symbol": "rDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 115,+ "max": 210,+ "conditions": "VI = VGS = 3.6 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-channel MOSFET on-resistance",+ "symbol": "rDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 145,+ "max": 270,+ "conditions": "VI = VGS = 2.5 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-channel leakage current",+ "symbol": "Ilkg(P)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 6.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "N-channel MOSFET on-resistance",+ "symbol": "rDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 85,+ "max": 200,+ "conditions": "VI = VGS = 3.6 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "N-channel MOSFET on-resistance",+ "symbol": "rDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 115,+ "max": 280,+ "conditions": "VI = VGS = 2.5 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "N-channel leakage current",+ "symbol": "Ikg(N)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 6.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "P-channel current limit",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "A",+ "min": 0.9,+ "typ": 1.1,+ "max": 1.3,+ "conditions": "2.5 V < VI < 6.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Oscillator frequency",+ "symbol": "fS",+ "kind": "electrical",+ "unit": "MHz",+ "min": 1,+ "typ": 1.25,+ "max": 1.5,+ "conditions": "VFB = 0.5 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fixed output voltage accuracy (no load)",+ "symbol": "VO",+ "kind": "tolerance",+ "unit": "%",+ "min": 0,+ "typ": null,+ "max": 3,+ "conditions": "VI = 3.6 V to 6.0 V; IO = 0 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fixed output voltage accuracy (0 to 600 mA)",+ "symbol": "VO",+ "kind": "tolerance",+ "unit": "%",+ "min": -3,+ "typ": null,+ "max": 3,+ "conditions": "VI = 3.6 V to 6.0 V; 0 mA ≤ IO ≤ 600 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Leakage current into SW pin",+ "symbol": "Ikg(SW)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "VI > VO, 0 V ≤ VSW ≤ VI",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse leakage current into pin SW",+ "symbol": "Ikg(SW)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "VI = open; EN = GND; VSW = 6.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Supply voltage",+ "symbol": "VIN",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Voltages on EN, MODE, FB, SW",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range (absolute maximum)",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Lead temperature",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "soldering, 10 sec",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Supply voltage",+ "symbol": "VI",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output current",+ "symbol": "IO",+ "kind": "recommended_operating",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Inductor",+ "symbol": "L",+ "kind": "recommended_operating",+ "unit": "µH",+ "min": 3.3,+ "typ": null,+ "max": 10,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitor",+ "symbol": "CI",+ "kind": "recommended_operating",+ "unit": "µF",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitor",+ "symbol": "CO",+ "kind": "recommended_operating",+ "unit": "µF",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating ambient temperature",+ "symbol": "TA",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 85,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance, MSOP",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 60,+ "max": null,+ "conditions": "based on a soldered PowerPAD using thermal vias",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -240,4 +667,4 @@ "visibility": { "public": true }-}+}