component
TPS62026DGQ
Public Made by Adomby adom
Texas Instruments DC-DC Converters, MSOP-10-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPS62026DGQ
Texas Instruments · DC-DC Converters · MSOP-10-EP
TPS62026DGQ from Texas Instruments, in a MSOP-10-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EN | input | Enable pin: pulling EN to ground forces shutdown mode, pulling EN to VI enables the device, and EN must not be left floating and must be terminated. |
| 2 | VIN | power_in | Supply voltage input for the converter. |
| 3 | VIN | power_in | Supply voltage input for the converter (second VIN pin, bonded to the same supply). |
| 4 | GND | power_in | Analog ground. |
| 5 | FB | input | Feedback input: connect an external resistor divider to this pin, or connect FB directly to the output for the fixed 3.3 V version. |
| 6 | MODE | input | Active-high MODE pin on the TPS62026: pulling MODE high forces fixed-frequency PWM operation, and pulling it low enables Power Save Mode (PFM at light load, fixed-frequency PWM at medium to heavy load). |
| 7 | SW | bidirectional | Switch pin of the converter, connected to the drain of the internal power MOSFETs. |
| 8 | SW | bidirectional | Switch pin of the converter, connected to the drain of the internal power MOSFETs (second SW pin). |
| 9 | PGND | power_in | Power ground. |
| 10 | PGND | power_in | Power ground (second PGND pin). |
| 11 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | MSOP-10-EP |
| Category | Power Management (PMIC) |
| Pins | 11 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VI | 2.5 | 6 | V | 3 | ||
| Operating quiescent current | IQ | 18 | 35 | µA | IO = 0 mA, device is not switching | 3 | |
| Shutdown supply current | ISD | 0.1 | 1 | µA | EN = GND | 3 | |
| Under-voltage lockout threshold | VUVLO | 1.5 | 2.3 | V | 3 | ||
| EN high level input voltage | VEN | 1.4 | V | 3 | |||
| EN low level input voltage | VEN | 0.4 | V | 3 | |||
| EN input bias current | IEN | 0.01 | 1 | µA | EN = GND or VIN | 3 | |
| MODE high level input voltage | V(MODE) | 1.4 | V | 3 | |||
| MODE low level input voltage | V(MODE) | 0.4 | V | 3 | |||
| MODE input bias current | I(MODE) | 0.01 | 1 | µA | MODE = GND or VIN | 3 | |
| P-channel MOSFET on-resistance | rDS(ON) | 115 | 210 | mΩ | VI = VGS = 3.6 V | 3 | |
| P-channel MOSFET on-resistance | rDS(ON) | 145 | 270 | mΩ | VI = VGS = 2.5 V | 3 | |
| P-channel leakage current | Ilkg(P) | 1 | µA | VDS = 6.0 V | 3 | ||
| N-channel MOSFET on-resistance | rDS(ON) | 85 | 200 | mΩ | VI = VGS = 3.6 V | 3 | |
| N-channel MOSFET on-resistance | rDS(ON) | 115 | 280 | mΩ | VI = VGS = 2.5 V | 3 | |
| N-channel leakage current | Ikg(N) | 1 | µA | VDS = 6.0 V | 3 | ||
| P-channel current limit | IL | 0.9 | 1.1 | 1.3 | A | 2.5 V < VI < 6.0 V | 3 |
| Oscillator frequency | fS | 1 | 1.25 | 1.5 | MHz | VFB = 0.5 V | 3 |
| Fixed output voltage accuracy (no load) | VO | 0 | 3 | % | VI = 3.6 V to 6.0 V; IO = 0 mA | 3 | |
| Fixed output voltage accuracy (0 to 600 mA) | VO | -3 | 3 | % | VI = 3.6 V to 6.0 V; 0 mA ≤ IO ≤ 600 mA | 3 | |
| Leakage current into SW pin | Ikg(SW) | 0.1 | 1 | µA | VI > VO, 0 V ≤ VSW ≤ VI | 3 | |
| Reverse leakage current into pin SW | Ikg(SW) | 0.1 | 1 | µA | VI = open; EN = GND; VSW = 6.0 V | 3 | |
| Supply voltage | VIN | -0.3 | 7 | V | 2 | ||
| Voltages on EN, MODE, FB, SW | -0.3 | V | 2 | ||||
| Operating junction temperature range (absolute maximum) | TJ | -40 | 150 | °C | 2 | ||
| Storage temperature range | -65 | 150 | °C | 2 | |||
| Lead temperature | 260 | °C | soldering, 10 sec | 2 | |||
| Supply voltage | VI | 2.5 | 6 | V | 2 | ||
| Output current | IO | 600 | mA | 2 | |||
| Inductor | L | 3.3 | 10 | µH | 2 | ||
| Input capacitor | CI | 10 | µF | 2 | |||
| Output capacitor | CO | 10 | µF | 2 | |||
| Operating ambient temperature | TA | -40 | 85 | °C | 2 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 2 | ||
| Junction-to-ambient thermal resistance, MSOP | RθJA | 60 | °C/W | based on a soldered PowerPAD using thermal vias | 2 |
CAD (KiCad official)
- Symbol:
TPS62026DGQ - Footprint:
Package_SO:MSOP-10-1EP_3x3mm_P0.5mm_EP1.68x1.88mm - 3D model: MSOP-10-EP (KiCad packages3D, STEP)
- 3D model files:
tps62026dgq-etched.step/tps62026dgq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps62026dgq.step/tps62026dgq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (31 pp, sha256
092ca3f3b8670f56, retrieved 2026-10-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).