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TPS563209DDCR

Public Made by Adom

by adom

Texas Instruments DC-DC Converters, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPS563209DDCR

Texas Instruments · DC-DC Converters · SOT-23-6

TPS563209DDCR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground return and source terminal of low-side power NFET; connect feedback path using Kelvin connection at single point.
2 SW output Switch node connecting high-side and low-side NFET; voltage range ±1.8V to 17V (recommended operating), ±2V to 19V (absolute maximum).
3 VIN power_in Input voltage supply pin and drain terminal of high-side power NFET; operating voltage range 4.5V to 17V.
4 VFB input Converter feedback input for monitoring output voltage via resistor divider; threshold voltage 758-772mV at 25°C; voltage range 0V to 5.5V (recommended operating).
5 EN input Active-high enable input control; logic high threshold >1.6V, low threshold <0.6V; internal pull-up resistance 225-900kΩ.
6 VBST power_in Bootstrap supply input for high-side NFET gate drive circuit; voltage range -0.1V to 23V (recommended operating); connect 0.1µF capacitor between VBST and SW pins.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-6
Category Power Management (PMIC)
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating non-switching supply current IVIN 650 900 µA VIN current, TA = 25°C, EN = 5V, VFB = 0.8 V 5
Shutdown supply current IVINSDN 3 10 µA VIN current, TA = 25°C, EN = 0 V 5
EN high-level input voltage VENH 1.6 V 5
EN low-level input voltage VENL 0.6 V 5
EN pin resistance to GND REN 225 450 900 kΩ VEN = 12 V 5
VFB threshold voltage VFBTH 758 765 772 mV TA = 25°C, VO = 1.05 V, continuous mode operation 5
VFB input current IVFB -0.1 0 0.1 mA VFB = 0.8V, TA = 25°C 5
Current limit (L1 = 2.2 µH) Iocl 2.5 3.2 4.3 A DC current, VOUT = 1.05V, L1 = 2.2 µH 5
Current limit (L1 = 1.5 µH) Iocl 3.5 4.2 5.3 A DC current, VOUT = 1.05V, L1 = 1.5 µH 5
UVLO wake-up VIN voltage UVLO 3.45 3.75 4.05 V 5
UVLO hysteresis VIN voltage UVLO 0.13 0.32 0.55 V 5
Soft-start time Tss 0.7 1 1.3 ms Internal soft-start time, TA = 25°C 5
Minimum off time tOFF(MIN) 260 310 ns TA = 25°C, VFB = 0.5 V 5
Output OVP threshold VOVP 125 %xVfbth OVP Detect 5
Output UVP threshold VUVP 65 %xVfbth Hiccup detect 5
High side switch resistance RDS(on)h 68 mΩ TA = 25°C, VBST – SW = 5.5 V 5
Low side switch resistance RDS(on)l 39 mΩ TA = 25°C 5
Thermal shutdown threshold TSDN 155 °C Shutdown temperature 5
Thermal shutdown hysteresis TSDN 35 °C Hysteresis 5
On time tON 150 ns VIN = 12 V, VO = 1.05 V 5
Hiccup power-on time THiccupOn 1 ms Relative to soft start time 5
Hiccup power-off time THiccupOff 7 ms Relative to soft start time 5
Input voltage range VIN, EN -0.3 19 V 4
Input voltage range VBST -0.3 25 V 4
Input voltage range VBST (10 ns transient) -0.3 27.5 V 4
Input voltage range VBST (vs SW) -0.3 6.5 V 4
Input voltage range VFB -0.3 6.5 V 4
Input voltage range SW -2 19 V 4
Input voltage range SW (10 ns transient) -3.5 21 V 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature Tstg -55 150 °C 4
Supply input voltage range VIN 4.5 17 V 4
Input voltage range VBST VI -0.1 23 V 4
Input voltage range VBST (10 ns transient) VI -0.1 26 V 4
Input voltage range VBST (vs SW) VI -0.1 6 V 4
Input voltage range EN VI -0.1 17 V 4
Input voltage range VFB VI -0.1 5.5 V 4
Input voltage range SW VI -1.8 17 V 4
Input voltage range SW (10 ns transient) VI -3.5 20 V 4
Operating free-air temperature TA -40 85 °C 4
Junction-to-ambient thermal resistance RθJA 87.9 °C/W 4
Junction-to-case (top) thermal resistance RθJC(top) 42.2 °C/W 4
Junction-to-board thermal resistance RθJB 13.6 °C/W 4
Junction-to-top characterization parameter ψJT 1.9 °C/W 4
Junction-to-board characterization parameter ψJB 13.3 °C/W 4

CAD (KiCad official)

  • Symbol: TPS563209DDCR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: tps563209ddcr-etched.step / tps563209ddcr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps563209ddcr.step / tps563209ddcr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (30 pp, sha256 ec1b7876fc1cb980, retrieved 2026-09-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF