main
Ray Brief states the pinout check that actually ran (was an unconditional "Datasheet-verified pinout") c5df026 10d ago
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  "type": "component",
  "slug": "tps563208ddcr",
  "title": "TPS563208DDCR",
  "brief": "Texas Instruments DC-DC Converters, TSOT-23-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "TPS563208DDCR",
    "manufacturer": "Texas Instruments",
    "package": "TSOT-23-6",
    "pin_count": 6,
    "category": "PMIC",
    "subcategory": "DC-DC Converters",
    "datasheet": "https://www.ti.com/lit/ds/symlink/tps563208ddcr.pdf",
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    "distributor_links": {
      "digikey": "296-44844-2-ND",
      "lcsc": "C468250"
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    "pins": [
      {
        "number": "1",
        "name": "GND",
        "type": "power_in",
        "description": "Ground pin. Source terminal of the low-side power NFET and the ground return for the controller circuit. Connect the sensitive VFB to this GND at a single point."
      },
      {
        "number": "2",
        "name": "SW",
        "type": "output",
        "description": "Switch node connection between the internal high-side NFET and low-side NFET. Connect to the output inductor. Absolute-max range −2 V to 19 V; SW voltage referenced during 10-ns transient extends −3.5 V to 21 V."
      },
      {
        "number": "3",
        "name": "VIN",
        "type": "power_in",
        "description": "Input voltage supply pin and drain terminal of the high-side power NFET. Recommended operating range 4.5 V to 17 V. Bypass to GND with a low-ESR ceramic capacitor."
      },
      {
        "number": "4",
        "name": "VFB",
        "type": "input",
        "description": "Converter feedback input. Connect to the output voltage through a feedback resistor divider. Internal reference V_FBTH ≈ 768 mV (CCM); input current ≤ ±0.1 µA."
      },
      {
        "number": "5",
        "name": "EN",
        "type": "input",
        "description": "Enable input control. Active high; must be pulled up to enable the device. V_ENH ≥ 1.6 V (on), V_ENL ≤ 0.8 V (off). Internal pull-down resistance to GND ≈ 400 kΩ (225-900 kΩ)."
      },
      {
        "number": "6",
        "name": "VBST",
        "type": "power_out",
        "description": "Bootstrap supply input for the high-side NFET gate-drive circuit. Connect a 0.1-µF ceramic capacitor between VBST and SW. Absolute-max VBST (vs SW) 6.5 V."
      }
    ],
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      "extractor": "ds2sf",
      "datasheet": {
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        "pages": 27,
        "sha256": "b1e861e0a063eafe",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 6,
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    "pin1": {
      "pad": "1",
      "at": [
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      "corner": "top-left",
      "source": "silk-marker",
      "derived_from": "SOT-23-6@sha256:f341c73aac9dcb55",
      "mark": "drawn"
    }
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Texas Instruments",
      "Package": "TSOT-23-6",
      "Category": "PMIC",
      "Pins": "6"
    }
  },
  "sections": [
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  "discovery_triggers": [
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  "discovery_pitch": "TPS563208DDCR (Texas Instruments) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
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  "variants": [
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      "mpn": "TPS563208DDCR",
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      "mpn": "TPS563208DDCRDDCT",
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  "updated_at": "2026-09-25T12:15:51.940Z"
}