component
TPS562209DDCR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOT-23-THIN-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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TPS562209DDCR
Texas Instruments · DC-DC Converters · SOT-23-THIN-6
TPS562209DDCR from Texas Instruments, in a SOT-23-THIN-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground pin, the source terminal of the low-side power NFET and the ground terminal for the controller circuit; connect sensitive VFB to this GND at a single point. |
| 2 | SW | output | Switch node connection between the high-side NFET and the low-side NFET. |
| 3 | VIN | power_in | Input voltage supply pin and the drain terminal of the high-side power NFET. |
| 4 | VFB | input | Converter feedback input; connect to the output voltage with a feedback resistor divider. |
| 5 | EN | input | Enable input control; active high and must be pulled up to enable the device. |
| 6 | VBST | power_in | Supply input for the high-side NFET gate drive circuit; connect a 0.1 µF capacitor between VBST and SW pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-THIN-6 |
| Category | Power Management (PMIC) |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range VIN, EN | VIN, EN | -0.3 | 19 | V | 4 | ||
| Input voltage range VBST | VBST | -0.3 | 25 | V | 4 | ||
| Input voltage range VBST (10 ns transient) | VBST | -0.3 | 27.5 | V | 10 ns transient | 4 | |
| Input voltage range VBST (vs SW) | VBST | -0.3 | 6.5 | V | vs SW | 4 | |
| Input voltage range VFB | VFB | -0.3 | 6.5 | V | 4 | ||
| Input voltage range SW | SW | -2 | 19 | V | 4 | ||
| Input voltage range SW (10 ns transient) | SW | -3.5 | 21 | V | 10 ns transient | 4 | |
| Operating junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Supply input voltage range | VIN | 4.5 | 17 | V | 4 | ||
| Input voltage range VBST | VBST | -0.1 | 23 | V | 4 | ||
| Input voltage range VBST (10 ns transient) | VBST | -0.1 | 26 | V | 10 ns transient | 4 | |
| Input voltage range VBST (vs SW) | VBST | -0.1 | 6 | V | vs SW | 4 | |
| Input voltage range EN | EN | -0.1 | 17 | V | 4 | ||
| Input voltage range VFB | VFB | -0.1 | 5.5 | V | 4 | ||
| Input voltage range SW | SW | -1.8 | 17 | V | 4 | ||
| Input voltage range SW (10 ns transient) | SW | -3.5 | 20 | V | 10 ns transient | 4 | |
| Operating free-air temperature | TA | -40 | 85 | °C | 4 | ||
| Operating non-switching supply current | IVIN | 650 | 900 | µA | VIN current, TA = 25°C, EN = 5V, VFB = 0.8 V | 5 | |
| Shutdown supply current | IVINSDN | 3 | 10 | µA | VIN current, TA = 25°C, EN = 0 V | 5 | |
| EN high-level input voltage | VENH | 1.6 | V | EN | 5 | ||
| EN low-level input voltage | VENL | 0.6 | V | EN | 5 | ||
| EN pin resistance to GND | REN | 225 | 450 | 900 | kΩ | VEN = 12 V | 5 |
| VFB threshold voltage | VFBTH | 758 | 765 | 772 | mV | TA = 25°C, VO = 1.05 V, continuous mode operation | 5 |
| VFB input current | IVFB | -0.1 | 0 | 0.1 | mA | VFB = 0.8V, TA = 25°C | 5 |
| Current limit | Iocl | 2.5 | 3.2 | 4.3 | A | DC current, VOUT = 1.05V , L1 = 2.2 µH | 5 |
| Current limit | Iocl | 3.5 | 4.2 | 5.3 | A | DC current, VOUT = 1.05V , L1 = 1.5 µH | 5 |
| Minimum off time | tOFF(MIN) | 260 | 310 | ns | TA = 25°C, VFB = 0.5 V | 5 | |
| Soft-start time | Tss | 0.7 | 1 | 1.3 | ms | Internal soft-start time, TA = 25°C | 5 |
| UVLO wake up VIN voltage | UVLO | 3.45 | 3.75 | 4.05 | V | Wake up VIN voltage | 5 |
| UVLO hysteresis VIN voltage | UVLO | 0.13 | 0.32 | 0.55 | V | Hysteresis VIN voltage | 5 |
| High side switch resistance (TPS562209) | RDS(on)h | 122 | mΩ | TA = 25°C, VBST, SW = 5.5 V (TPS562209) | 5 | ||
| Low side switch resistance (TPS562209) | RDS(on)l | 72 | mΩ | TA = 25°C (TPS562209) | 5 | ||
| Thermal shutdown threshold | TSDN | 155 | °C | Shutdown temperature | 5 | ||
| Thermal shutdown hysteresis | TSDN | 35 | °C | Hysteresis | 5 | ||
| On time | tON | 150 | ns | VIN = 12 V, VO = 1.05 V | 5 | ||
| Hiccup power on time | THiccupOn | 1 | ms | Relative to soft start time | 5 | ||
| Hiccup power off time | THiccupOff | 7 | ms | Relative to soft start time | 5 | ||
| Junction-to-ambient thermal resistance (DDC, TPS562209) | RθJA | 109.2 | °C/W | DDC (6 pins), TPS562209 | 4 | ||
| Junction-to-case (top) thermal resistance (DDC, TPS562209) | RθJC(top) | 44.5 | °C/W | DDC (6 pins), TPS562209 | 4 | ||
| Junction-to-board thermal resistance (DDC, TPS562209) | RθJB | 13.4 | °C/W | DDC (6 pins), TPS562209 | 4 | ||
| Junction-to-top characterization parameter (DDC, TPS562209) | ψJT | 2.3 | °C/W | DDC (6 pins), TPS562209 | 4 | ||
| Junction-to-board characterization parameter (DDC, TPS562209) | ψJB | 60.4 | °C/W | DDC (6 pins), TPS562209 | 4 |
CAD (KiCad official)
- Symbol:
TPS562209DDCR - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: SOT-23-THIN-6 (KiCad packages3D, STEP)
- 3D model files:
tps562209ddcr-etched.step/tps562209ddcr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps562209ddcr.step/tps562209ddcr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (30 pp, sha256
6a0a8b9dc0f61ef2, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).