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TPS55165QPWPTQ1

Texas Instruments · DC-DC Converters · HTSSOP-20-EP

TPS55165QPWPTQ1 from Texas Instruments, in a HTSSOP-20-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PGND power_in Power-ground pin.
2 L1 passive Buck power-stage switch node; connect a nominal 4.7 µH inductor between L1 and L2.
3 BST1 passive Bootstrap node for the buck power stage; connect a 100-nF capacitor between this pin and L1.
4 VINP power_in Supply-power input voltage; connect to the input supply line.
5 VINL power_in Supply-input voltage for internal biasing; connect to the input supply line.
6 IGN input Ignition-enable input; ignition is enabled when high and disabled when low.
7 PS input Logic-level input that selects low-power mode when high and normal mode when low.
8 IGN_PWRL input Logic-level IGN power-latch signal; IGN is latched when this pin is high and not latched when low.
9 SS_EN input Configuration pin for spread spectrum; enabled when the pin is open and disabled when low.
10 PG_DLY passive Power-good delay configuration; a 10 kΩ to 100 kΩ resistor sets 0.5 ms to 40 ms, and connecting to ground gives the default 2 ms (typical).
11 VREG_Q input Quiet feedback pin for the gate-drive supply; connect close to the top of the 4.7-µF decoupling capacitor at VREG and always to VREG during operation to prevent EOS damage.
12 VREG power_out Gate-drive supply for the buck-boost power stages; needs a 4.7-µF (typical) decoupling capacitor to power ground and cannot drive external loads.
13 GND power_in Analog ground.
14 VOS_FB input On the TPS55165-Q1 this pin selects the output voltage: 5 V when connected to GND and 12 V when connected to VREG.
15 PG output Open-drain power-good output that is high when the status is good and low on a failure.
16 VOUT_SENSE input Sense pin for the buck-boost converter output voltage; must be connected to the VOUT pin.
17 VOUT power_out Buck-boost converter output voltage.
18 GND power_in Analog ground.
19 BST2 passive Bootstrap node for the boost power stage; connect a typical 100-nF capacitor between this pin and L2.
20 L2 passive Boost power-stage switch node; connect a nominal 4.7 µH inductor between L1 and L2.
21 PowerPAD power_in Exposed thermal pad that must be soldered to power ground to achieve the appropriate power dissipation through the analog ground plane.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package HTSSOP-20-EP
Category Power Management (PMIC)
Pins 21

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage at VINP and VINL pins (after wake-up), VOS_FB to GND 2 36 V TPS55165-Q1 with VOS_FB pin connected to GND 5
Supply voltage at VINP and VINL pins (after wake-up), VOS_FB to VREG 4 36 V TPS55165-Q1 with VOS_FB pin connected to VREG 5
Output voltage at VOUT and VOUT_SENSE pins 0 12 V 5
Output voltage at PG pin 0 5 V 5
Input voltage on IGN pin 0 36 V 5
Input voltage on logic pins IGN_PWRL, PS and SS_EN 0 5 V 5
Input voltage on VOS_FB pin 0 5 V TPS55165-Q1 5
Operating free air temperature, TA TA -40 125 ℃ 5
Operating virtual junction temperature, TJ TJ -40 150 ℃ 5
Protected battery voltage VINP, VINL -0.3 40 V 5
Feedback voltage VOS_FB -0.3 5.5 V 5
Low-power mode input PS -0.3 40 V 5
Low-voltage inputs IGN_PWRL, SS_EN, PG_DLY -0.3 5.5 V 5
Ignition enable input IGN -7 40 V 5
Buck-boost output voltage VOUT, VOUT_SENSE -0.3 20 V 5
Gate-driver supply VREG, VREG_Q -0.3 5.5 V 5
Buck switching node voltage L1 -0.3 40 V 5
Boost switching node voltage L2 -0.3 20 V 5
Boot-strap overdrive voltage BST1-L1, BST2-L2 -0.3 5.5 V 5
Power-good output voltage PG -0.3 15 V 5
Ground PGND, GND -0.3 0.3 V 5
Junction temperature TJ -40 150 °C 5
Storage temperature Tstg -65 175 °C 5
Junction-to-ambient thermal resistance RθJA 35.4 °C/W 6
Junction-to-case (bottom) thermal resistance RθJC(bot) 0.9 °C/W 6
Supply voltage operating input voltage VIN 2 14 36 V Applied at VINP and VINL pins, after device startup; TPS55165-Q1 with VOS_FB pin connected to GND 6
Supply voltage operating input voltage VIN 4 14 36 V Applied at VINP and VINL pins, after device startup; TPS55165-Q1 with VOS_FB pin connected to VREG 6
Feedback voltage in normal mode for VOUT in fixed 5-V setting VFB_NM_5V 4.9 5 5.1 V Measured at VOUT_SENSE pin; VOS_FB pin connected to GND; VOUT pin connected to VOUT_SENSE 7
Feedback voltage in normal mode for VOUT in fixed 12-V setting VFB_NM_12V 11.76 12 12.24 V Measured at VOUT_SENSE pin; VOS_FB pin connected to VREG; VOUT pin connected to VOUT_SENSE 7
Feedback voltage in low-power mode for VOUT in 5-V setting VFB_PS_5V 4.85 5 5.15 V Measured at VOUT_SENSE pin; VOS_FB pin connected to GND; VOUT pin connected to VOUT_SENSE 7
Feedback voltage in low-power mode for VOUT in 12-V setting VFB_PS_12V 11.64 12 12.36 V Measured at VOUT_SENSE pin; VOS_FB pin connected to VREG; VOUT pin connected to VOUT_SENSE 7
Pulldown discharge resistance at VOUT RpdVOUT 250 365 850 Ω Device in OFF state, INIT state, or PRE_RAMP state; VIGN = 0 V, VPS = 0 V, VIGN_PWRL = 0 V 7
Max output current in normal operation for VOUT in 5-V setting IOUT_5V 1 A TPS55165-Q1 with VOS_FB pin connected to GND; 6 V ≤ VIN; DCR ≤ 40 mΩ 8
Max output current in normal operation for VOUT in 5-V setting IOUT_5V 800 mA TPS55165-Q1 with VOS_FB pin connected to GND; 3.8 V ≤ VIN ≤ 6 V; DCR ≤ 40 mΩ 8
Max output current in normal operation for VOUT in 5-V setting IOUT_5V 400 mA TPS55165-Q1 with VOS_FB pin connected to GND; 2.3 V ≤ VIN < 3.8 V; DCR ≤ 40 mΩ 8
Max output current in normal operation for VOUT in 5-V setting IOUT_5V 200 mA TPS55165-Q1 with VOS_FB pin connected to GND; 2 V ≤ VIN < 2.3 V; DCR ≤ 40 mΩ 8
Max output current in normal operation for VOUT in 12-V setting IOUT_12V 800 mA TPS55165-Q1 with VOS_FB pin connected to VREG; 14 V ≤ VIN; DCR ≤ 40 mΩ 8
Max output current in normal operation for VOUT in 12-V setting IOUT_12V 600 mA TPS55165-Q1 with VOS_FB pin connected to VREG; 9.2 V ≤ VIN ≤ 14 V; DCR ≤ 40 mΩ 8
Max output current in normal operation for VOUT in 12-V setting IOUT_12V 300 mA TPS55165-Q1 with VOS_FB pin connected to VREG; 5.6 V ≤ VIN < 9.2 V; DCR ≤ 40 mΩ 8
Max output current in normal operation for VOUT in 12-V setting IOUT_12V 150 mA TPS55165-Q1 with VOS_FB pin connected to VREG; 4 V ≤ VIN < 5.6 V; DCR ≤ 40 mΩ 8
On-resistance buck-stage high-side (HS) FET Rdson_BUCK_HS 150 300 mΩ 8
On-resistance buck-stage low-side (LS) FET Rdson_BUCK_LS 150 300 mΩ 8
On-resistance boost-stage HS FET Rdson_BOOST_HS 150 300 mΩ 8
On-resistance boost-stage LS FET Rdson_BOOST_LS 150 300 mΩ 8
Peak current limit for HS buck, LS buck, and LS boost ISW_limit 2 3.5 4.5 A Device in normal operating mode 8
Undervoltage lockout threshold, VIN voltage decreasing, VOS_FB to GND UVLO 1.8 2 V Device is in normal operating mode; TPS55165-Q1 with VOS_FB pin connected to GND 9
Undervoltage lockout threshold, VIN voltage decreasing, VOS_FB to VREG UVLO 3.6 4 V Device is in normal operating mode; TPS55165-Q1 with VOS_FB pin connected to VREG 9
VIN Overvoltage (OV) lockout threshold OVLO 36 40 V VIN voltage increasing; Device is in normal operating mode 9
VOUT OV protection VOUT_PROT_OV 110 125 % Device is in normal operating mode 9
IGN wake-up threshold IGNWAKE 2.5 3.1 3.7 V VIGN voltage increasing to wake-up device 9
IGN power-down threshold IGNPD 1.5 2.1 2.7 V VIGN voltage decreasing to power-down device 9
IGN wake-up hysteresis IGNHYST 0.76 1 1.35 V 9
Logic input hysteresis for pins IGN_PWRL, PS, and SS_EN VLOGIC_IN_HYST 0.15 0.39 V Device in power-up condition 9
Pulldown resistance on PS pin to GND RLOGIC_IN_PD 35 70 111 kΩ 9
Pullup current on SS_EN pin Ipull-up_SS_EN 85 266 µA 9
Pullup current on IGN_PWRL pin Ipull-up_IGN_PWRL 1 8 µA 10
Overtemperature shutdown protection threshold TPROT 175 210 ℃ 10
PG threshold undervoltage, deviation from nominal VOUT to assert PG low, in normal mode PGTH_UV -10 -5 % In normal mode 10
PG threshold undervoltage, deviation from nominal VOUT to assert PG low, in low power mode PGTH_UV -20 -5 % In low power mode 10
PG deglitch filter time PGDeglitch 45 50 55 µs 12

CAD (KiCad official)

  • Symbol: TPS55165QPWPTQ1
  • Footprint: Package_SO:TSSOP-20-1EP_4.4x6.5mm_P0.65mm_EP2.15x3.35mm
  • 3D model: HTSSOP-20-EP (KiCad packages3D, STEP)
  • 3D model files: tps55165qpwptq1-etched.step / tps55165qpwptq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps55165qpwptq1.step / tps55165qpwptq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (48 pp, sha256 fc2228e91106a13a, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF