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tps54331dda-etched.glb tps54331dda: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
tps54331dda-etched.step tps54331dda: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
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TPS54331DDA

Texas Instruments · DC-DC Converters · ESOP-8

TPS54331DDA from Texas Instruments, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BOOT output Bootstrap voltage output for high-side MOSFET gate drive; requires 0.1μF capacitor between BOOT and PH pins to maintain gate bias voltage above 2.1V minimum.
2 VIN power_in Input power supply voltage pin; supports 3.5V to 28V operating range.
3 EN input Enable/disable control input; pull below 1.25V to disable converter or leave floating to enable; UVLO threshold programmable using external resistor divider.
4 SS input Slow start input; connect external capacitor to set output rise time from 1ms to 10ms using 2μA charge current.
5 VSENSE input Feedback input to inverting node of transconductance error amplifier for output voltage regulation and current limiting.
6 COMP output Error amplifier output and PWM comparator input; connect external frequency compensation network between this pin and ground.
7 GND power_in Ground reference pin; low-side MOSFET source connection and current return path.
8 PH output High-side MOSFET source output; internal 80mΩ MOSFET switch node with 570kHz fixed switching frequency.
9 PowerPAD power_in Exposed thermal pad for ground connection and heat dissipation; must be connected to ground plane for proper thermal performance (DDA package only).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package ESOP-8
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VIN input voltage VIN -0.3 30 V 4
EN input voltage EN -0.3 6 V 4
BOOT input voltage BOOT 38 V 4
VSENSE input voltage VSENSE -0.3 3 V 4
COMP input voltage COMP -0.3 3 V 4
SS input voltage SS -0.3 3 V 4
BOOT-PH output voltage BOOT-PH 8 V 4
PH output voltage PH -0.6 30 V 4
PH transient, 10ns, from GND to negative peak PH -5 V 10ns transient from GND to negative peak 4
EN source current EN 100 μA 4
BOOT source current BOOT 100 mA 4
VSENSE source current VSENSE 10 μA 4
PH source current PH 9 A 4
VIN sink current VIN 9 A 4
COMP sink current COMP 100 μA 4
SS sink current SS 200 μA 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature range Tstg -65 150 °C 4
ESD human body model (HBM), all pins V(ESD) -2 2 kV ANSI/ESDA/JEDEC JS-001 4
ESD charged device model (CDM), all pins V(ESD) -500 500 V JEDEC JESD22-C101 4
Operating input voltage on VIN pin VIN 3.5 28 V 4
Operating junction temperature TJ -40 150 °C 4
Internal undervoltage lockout threshold, rising and falling 3.5 V rising and falling 5
Shutdown supply current 1 4 μA EN = 0V, VIN = 12V, -40°C to 85°C 5
Operating non-switching supply current 110 190 μA VSENSE = 0.85V 5
Enable threshold, rising and falling 1.25 1.35 V rising and falling 5
EN input current at enable threshold -50mV -1 μA enable threshold - 50mV 5
EN input current at enable threshold +50mV -4 μA enable threshold + 50mV 5
Voltage reference 0.772 0.8 0.828 V 5
High-side MOSFET on-resistance 115 200 mΩ BOOT-PH = 3V, VIN = 3.5V 5
High-side MOSFET on-resistance 80 150 mΩ BOOT-PH = 6V, VIN = 12V 5
Error amplifier source and sink current -7 7 μA V(COMP) = 1V, 100mV overdrive 5
Current limit threshold 3.5 5.8 A VIN = 12V 5
Switching frequency 456 570 684 kHz VIN = 12V, 25°C 6
Minimum controllable on-time 105 130 ns VIN = 12V, 25°C 6
Maximum controllable duty cycle 90 93 % BOOT-PH = 6V 6
Error amplifier transconductance (gm) 92 μmhos -2μA < I(COMP) < 2μA, V(COMP) = 1V 5
Error amplifier DC gain 800 V/V VSENSE = 0.8V 5
Error amplifier unity gain bandwidth 2.7 MHz 5pF from COMP to GND pin 5
Switch current to COMP transconductance 12 A/V VIN = 12V 5
Eco-mode switch current threshold 160 mA 5
Thermal shutdown 165 °C 5
Soft-start charge current 2 μA V(SS) = 0.4V 5
SS to VSENSE matching 10 mV V(SS) = 0.4V 5
Junction-to-ambient thermal resistance (DDA) RθJA 48.7 °C/W 5
Junction-to-case (top) thermal resistance (DDA) RθJC(top) 52.4 °C/W 5
Junction-to-board thermal resistance (DDA) RθJB 25.5 °C/W 5
Junction-to-top characterization parameter (DDA) ψJT 8.4 °C/W 5
Junction-to-board characterization parameter (DDA) ψJB 25.2 °C/W 5
Junction-to-case (bottom) thermal resistance (DDA) RθJC(bot) 2.3 °C/W 5

CAD (KiCad official)

  • Symbol: TPS54331DDA
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm
  • 3D model: ESOP-8 (KiCad packages3D, STEP)
  • 3D model files: tps54331dda-etched.step / tps54331dda-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps54331dda.step / tps54331dda.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (40 pp, sha256 6ac89d4fddb009ba, retrieved 2026-09-24, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF