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TPS54260DGQ

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Texas Instruments DC-DC Converters, HVSSOP-10-EP-0.5mm. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPS54260DGQ

Texas Instruments · DC-DC Converters · HVSSOP-10-EP-0.5mm

TPS54260DGQ from Texas Instruments, in a HVSSOP-10-EP-0.5mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BOOT passive Bootstrap capacitor is required between BOOT and PH; if the capacitor voltage falls below the minimum required by the output device, the output is forced off until the capacitor is refreshed.
2 VIN power_in Input supply voltage, 3.5 V to 60 V.
3 EN input Enable pin with internal pull-up current source; pull below 1.2 V to disable, float to enable, or adjust the input undervoltage lockout with two resistors.
4 SS/TR input Slow-start and tracking pin where an external capacitor sets the output rise time, and its voltage overrides the internal reference so it can be used for tracking and sequencing.
5 RT/CLK input Resistor timing and external clock pin; a resistor to ground sets the switching frequency, and pulling above the PLL upper threshold turns it into a high-impedance synchronization clock input.
6 PWRGD output Open-drain power-good output that asserts low if output voltage is low due to thermal shutdown, dropout, over-voltage or EN shutdown.
7 VSENSE input Inverting node of the transconductance (gm) error amplifier.
8 COMP output Error amplifier output and input to the output switch current comparator; frequency compensation components connect to this pin.
9 GND power_in Ground.
10 PH output Source of the internal high-side power MOSFET.
11 Thermal Pad power_in Exposed thermal pad that must be electrically connected to the GND pin on the printed circuit board for proper operation.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package HVSSOP-10-EP-0.5mm
Category Power Management ICs
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage VIN VIN -0.3 65 V 5
Input voltage EN EN -0.3 5 V 5
Input voltage VSENSE VSENSE -0.3 3 V 5
Input voltage COMP COMP -0.3 3 V 5
Input voltage PWRGD PWRGD -0.3 6 V 5
Input voltage SS/TR SS/TR -0.3 3 V 5
Input voltage RT/CLK RT/CLK -0.3 3.6 V 5
Output voltage BOOT-PH BOOT-PH -0.3 8 V 5
Output voltage PH PH -0.6 65 V 5
Output voltage PH, 10-ns transient PH -5 65 V 10-ns transient 5
Voltage difference PAD to GND -200 200 mV 5
Source current EN EN 100 μA 5
Source current BOOT BOOT 100 mA 5
Source current VSENSE VSENSE 10 μA 5
Source current RT/CLK RT/CLK 100 μA 5
Sink current COMP COMP 100 μA 5
Sink current PWRGD PWRGD 10 mA 5
Sink current SS/TR SS/TR 200 μA 5
Operating junction temperature TJ -40 150 °C 5
Storage temperature Tstg -65 150 °C 5
ESD HBM V(ESD) -2000 2000 V Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 5
ESD CDM V(ESD) -500 500 V Charged-device model (CDM), per JEDEC specification JESD22-C101 5
Input supply voltage VI 3.5 60 V 5
Output current IO 2.5 A 5
Operating junction temperature TJ -40 150 °C 5
Junction-to-ambient thermal resistance RθJA 62.5 °C/W DGQ, standard board 6
Junction-to-case (top) thermal resistance RθJC(top) 83 °C/W DGQ 6
Junction-to-board thermal resistance RθJB 28 °C/W DGQ 6
Junction-to-top characterization parameter ψJT 1.7 °C/W DGQ 6
Junction-to-board characterization parameter ψJB 20.1 °C/W DGQ 6
Junction-to-case (bottom) thermal resistance RθJC(bot) 21 °C/W DGQ 6
Operating input voltage VIN 3.5 60 V 6
Shutdown supply current 1.3 4 μA EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 60 V 6
Operating: nonswitching supply current 138 200 μA VSENSE = 0.83 V, VIN = 12 V, 25°C 6
Enable threshold voltage 1.15 1.25 1.36 V No voltage hysteresis, rising and falling 6
Voltage reference VREF 0.792 0.8 0.808 V TJ = 25°C 6
Voltage reference over temperature VREF 0.784 0.8 0.816 V 6
High-side MOSFET on-resistance 300 mΩ VIN = 3.5 V, BOOT-PH = 3 V 6
High-side MOSFET on-resistance 200 410 mΩ VIN = 12 V, BOOT-PH = 6 V 6
Current limit threshold 3.5 6.1 A VIN = 12 V, TJ = 25°C 6
Switching frequency range using RT mode fSW 100 2500 kHz 7
Switching frequency fSW 450 581 720 kHz RT = 200 kΩ 7
Switching frequency range using CLK mode fSW 300 2200 kHz 7
RT/CLK high threshold 1.9 2.2 V 7
RT/CLK low threshold 0.5 0.7 V 7
Minimum VIN for defined PWRGD output 0.95 1.5 V V(PWRGD) < 0.5 V, II(PWRGD) = 100 μA 7
Internal undervoltage lockout threshold 2.5 V No voltage hysteresis, rising and falling 6
Error amplifier transconductance gM 310 μS -2 μA < ICOMP < 2 μA, VCOMP = 1 V 6
Thermal shutdown 182 °C 6

CAD (KiCad official)

  • Symbol: TPS54260DGQ
  • Footprint: Package_SO:MSOP-10-1EP_3x3mm_P0.5mm_EP1.68x1.88mm
  • 3D model: HVSSOP-10-EP-0.5mm (KiCad packages3D, STEP)
  • 3D model files: tps54260dgq-etched.step / tps54260dgq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps54260dgq.step / tps54260dgq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (61 pp, sha256 3dd6e95a60a876fa, retrieved 2026-10-23, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF