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TPS54061DRBR

Texas Instruments · DC-DC Converters · SON-8-EP(3x3)

TPS54061DRBR from Texas Instruments, in a SON-8-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BOOT output A bootstrap capacitor is required between BOOT and PH, and if the voltage on this capacitor falls below the minimum required by the output device, the output is forced to switch off until the capacitor is refreshed.
2 VIN power_in Input supply voltage, 4.7 V to 60 V.
3 EN input Enable pin with internal pull-up current source; pull below 1.18 V to disable and float to enable, and the input undervoltage lockout (UVLO) can be adjusted with two resistors.
4 RT/CLK input Resistor timing and external clock pin; an internal amplifier holds this pin at a fixed voltage when an external resistor to ground sets the switching frequency, and it becomes a synchronization input when pulled above the PLL upper threshold.
5 VSENSE input Inverting input of the transconductance (gm) error amplifier.
6 COMP output Error amplifier output and input to the output switch current comparator, where frequency compensation components connect.
7 GND power_in Ground.
8 PH output The source of the internal high-side power MOSFET and drain of the internal low-side MOSFET.
9 Thermal Pad power_in Thermal GND pin must be electrically connected to the exposed pad on the printed circuit board for proper operation.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SON-8-EP(3x3)
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating input voltage VIN 4.7 60 V 5
Enable threshold falling EN 1 1.18 V 5
Enable threshold rising EN 1.23 1.4 V 5
Voltage reference VREF 0.792 0.8 0.808 V TJ = 25°C, VIN = 12 V 5
Voltage reference VREF 0.784 0.8 0.816 V 1mA < IOUT < Minimum Current Limit 5
Operating non-switching supply current IQ 90 110 µA VSENSE = 0.9 V, VIN = 12 V 5
High-side MOSFET switch resistance RDS(on) 1.5 3 Ω BOOT-PH = 5.7 V 5
Low-side MOSFET switch resistance RDS(on) 0.8 1.5 Ω VIN = 12 V 5
Error amplifier source/sink current -8 8 µA V(COMP) = 1 V, 100 mV Overdrive 5
High-side sourcing current limit threshold 250 350 500 mA BOOT-PH = 5.7 V 5
Operating frequency using RT mode fSW 50 1100 kHz 5
Switching frequency fSW 425 472 520 kHz R(RT/CLK) = 120 kΩ 5
PLL frequency range 300 1100 kHz 5
VIN input voltage recommended operating range VIN 4.7 60 V 4
Output current IOUT 200 mA 4
Switching frequency set by RT/CLK resistor fSW 50 1100 kHz 4
Switching frequency synchronized to external clock fSW 300 1100 kHz 4
VIN absolute maximum voltage VIN -0.3 62 V 4
EN absolute maximum voltage EN -0.3 8 V 4
BOOT-PH absolute maximum voltage BOOT-PH -0.3 8 V 4
VSENSE absolute maximum voltage VSENSE -0.3 6 V 4
COMP absolute maximum voltage COMP -0.3 3 V 4
PH absolute maximum voltage PH -0.6 62 V 4
PH 10 ns transient voltage PH -4 62 V 10 ns transient 4
RT/CLK absolute maximum voltage RT/CLK -0.3 6 V 4
BOOT absolute maximum current BOOT 100 mA 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature Tstg -65 150 °C 4
Junction-to-ambient thermal resistance RθJA 42.9 °C/W 4
Junction-to-case (top) thermal resistance RθJC(top) 46 °C/W 4
Junction-to-board thermal resistance RθJB 18.1 °C/W 4
Junction-to-case (bottom) thermal resistance RθJC(bot) 3 °C/W 4
Junction-to-top characterization parameter ψJT 0.5 °C/W 4
Junction-to-board characterization parameter ψJB 18.3 °C/W 4
Shutdown supply current 1.4 µA EN = 0 V 5
Enable threshold hysteresis input current, +50 mV -4.7 µA Enable threshold +50 mV 5
Enable threshold hysteresis input current, -50 mV -1.2 µA Enable threshold -50 mV 5
Enable hysteresis current Ihys -3.5 µA 5
Enable high to start switching time 450 µs 5
VIN start voltage VIN 4.5 V VIN rising 5
Error amp input current 20 nA VSENSE pin 5
Error amp gm gm 108 µS -2µA < I(COMP) < 2µA, V(COMP) = 1 V 5
Error amp gm during slow start gm 27 µS -2 µA < I(COMP) < 2 µA, V(COMP) = 1 V, VSENSE = 0.4 V 5
Error amp DC gain 1000 V/V VSENSE = 0.8V 5
Minimum unity gain bandwidth 0.5 MHz 5
Start-switching threshold 0.57 V 5
COMP to Iswitch gm gm 1 A/V 5
Zero cross detect current -1.1 mA 5
Thermal shutdown 176 C 5
Minimum CLK pulsewidth 40 ns 5
RT/CLK voltage 0.53 V R(RT/CLK) = 120 kΩ 5
RT/CLK high threshold 1.8 V 5
RT/CLK low threshold 0.5 V 5
RT/CLK falling edge to PH rising edge delay 60 ns Measure at 500 kHz with RT resistor 5
PLL lock in time 100 µs Measure at 500 kHz 5
Minimum on-time 120 ns Measured at 50% to 50%, IOUT = 200 mA 6
Dead time 30 ns VIN = 12 V, IOUT = 200 mA, One transition 6
BOOT to PH regulation voltage 6 V VIN = 12 V 6
BOOT-PH UVLO 2.9 V 6
Internal slow-start time 2.36 ms fSW = 472 kHz, RT = 120 kΩ, 10% to 90% 6

CAD (KiCad official)

  • Symbol: TPS54061DRBR
  • Footprint: Package_SON:WSON-8-1EP_3x3mm_P0.5mm_EP1.6x2.0mm
  • 3D model: SON-8-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: tps54061drbr-etched.step / tps54061drbr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps54061drbr.step / tps54061drbr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (40 pp, sha256 4893c253fc9cc12c, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF