component
TPS51219RTET
Public Made by Adomby adom
Texas Instruments DC-DC Converters, QFN-16-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+54@@ -0,0 +1,54 @@+# TPS51219RTET++**Texas Instruments** · DC-DC Converters · QFN-16-EP(3x3)++TPS51219RTET from Texas Instruments, in a QFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | VREF | power_in | 2.0-V ±0.8% internal voltage reference output with 300-µA drive capability for external resistor divider network. |+| 2 | REFIN | input | Output voltage setting input programmed by resistor divider connected between VREF and GSNS within 0.5V to 2.0V range. |+| 3 | GSNS | input | GND sense return input connected to quiet ground reference point of load; short to GND if remote sensing not used. |+| 4 | VSNS | input | Voltage sense input connected to load voltage point for differential remote voltage feedback to error amplifier. |+| 5 | COMP | input | Error amplifier output and compensation network connection point; capacitor connected from COMP to VSNS (D-CAP2) or output capacitor (D-CAP). |+| 6 | TRIP | input | Overcurrent threshold setting input sourcing 10µA at room temperature with 4700ppm/°C temperature coefficient for RDS(on) current sensing configuration. |+| 7 | GND | power_in | Device analog ground reference; connect to quiet point on system ground plane with multiple vias. |+| 8 | PGND | power_in | Power ground return for low-side synchronous MOSFET gate driver and positive input for current sensing; route close to device. |+| 9 | V5 | power_in | 5V power supply input for internal circuits and MOSFET gate drivers; operating range 4.2V to 5.5V. |+| 10 | DL | output | Low-side synchronous MOSFET gate driver output; directly drives gate of low-side power FET. |+| 11 | DH | output | High-side synchronous MOSFET gate driver output; directly drives gate of high-side power FET with bootstrap charge. |+| 12 | SW | bidirectional | Switching node connection for high-side gate driver return and RDS(on) current sense negative input referenced to PGND. |+| 13 | BST | input | Bootstrap gate drive supply input for high-side driver; connect storage capacitor between BST and SW pins. |+| 14 | EN | input | Enable control input with 3.3V I/O level compatibility and 100ns debounce; short to GND to disable device operation. |+| 15 | MODE | input | Control mode selection input; resistor tied to GND sets D-CAP™/D-CAP2™ mode, switching frequency (300-670kHz), and current sensing scheme. |+| 16 | PGOOD | tri_state | Open-drain power good output signal; asserts high when output voltage within ±8% (typ) of REFIN target range. |+| 17 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Texas Instruments |+| Package | QFN-16-EP(3x3) |+| Category | Power Management (PMIC) |+| Pins | 17 |++## CAD (KiCad official)++- Symbol: `TPS51219RTET`+- Footprint: `Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm`+- 3D model: QFN-16-EP(3x3) (KiCad packages3D, STEP)+- 3D model files: `tps51219rtet-etched.step` / `tps51219rtet-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps51219rtet.step` / `tps51219rtet.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/tps51219) (36 pp, sha256 `d6e730c2602800ae`, retrieved 2026-10-07, tier: lcsc)+- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/tps51219rtet-datasheet.pdf)
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short to GND if remote sensing not used."+ },+ {+ "number": "4",+ "name": "VSNS",+ "type": "input",+ "description": "Voltage sense input connected to load voltage point for differential remote voltage feedback to error amplifier."+ },+ {+ "number": "5",+ "name": "COMP",+ "type": "input",+ "description": "Error amplifier output and compensation network connection point; capacitor connected from COMP to VSNS (D-CAP2) or output capacitor (D-CAP)."+ },+ {+ "number": "6",+ "name": "TRIP",+ "type": "input",+ "description": "Overcurrent threshold setting input sourcing 10µA at room temperature with 4700ppm/°C temperature coefficient for RDS(on) current sensing configuration."+ },+ {+ "number": "7",+ "name": "GND",+ "type": "power_in",+ "description": "Device analog ground reference; connect to quiet point on system ground plane with multiple vias."+ },+ {+ "number": "8",+ "name": "PGND",+ "type": "power_in",+ "description": "Power ground return for low-side synchronous MOSFET gate driver and positive input for current sensing; route close to device."+ },+ {+ "number": "9",+ "name": "V5",+ "type": "power_in",+ "description": "5V power supply input for internal circuits and MOSFET gate drivers; operating range 4.2V to 5.5V."+ },+ {+ "number": "10",+ "name": "DL",+ "type": "output",+ "description": "Low-side synchronous MOSFET gate driver output; directly drives gate of low-side power FET."+ },+ {+ "number": "11",+ "name": "DH",+ "type": "output",+ "description": "High-side synchronous MOSFET gate driver output; directly drives gate of high-side power FET with bootstrap charge."+ },+ {+ "number": "12",+ "name": "SW",+ "type": "bidirectional",+ "description": "Switching node connection for high-side gate driver return and RDS(on) current sense negative input referenced to PGND."+ },+ {+ "number": "13",+ "name": "BST",+ "type": "input",+ "description": "Bootstrap gate drive supply input for high-side driver; connect storage capacitor between BST and SW pins."+ },+ {+ "number": "14",+ "name": "EN",+ "type": "input",+ "description": "Enable control input with 3.3V I/O level compatibility and 100ns debounce; short to GND to disable device operation."+ },+ {+ "number": "15",+ "name": "MODE",+ "type": "input",+ "description": "Control mode selection input; resistor tied to GND sets D-CAP™/D-CAP2™ mode, switching frequency (300-670kHz), and current sensing scheme."+ },+ {+ "number": "16",+ "name": "PGOOD",+ "type": "tri_state",+ "description": "Open-drain power good output signal; asserts high when output voltage within ±8% (typ) of REFIN target range."+ },+ {+ "number": "17",+ "name": "EP",+ "type": "passive",+ "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.3",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.3",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-5-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: Thermal pad specified in datasheet but has no specific pin number designation in the QFN-16-EP pinou",+ "exposed pad 17 added from the footprint"+ ],+ "pages_sent": 14,+ "cost_usd": 0.122,+ "at": "2026-10-07T02:11:18"+ },+ "datasheet": {+ "url": "https://www.ti.com/cn/lit/gpn/tps51219",+ "pages": 36,+ "sha256": "d6e730c2602800ae",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 17,+ "described": 17,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ },+ "models_3d": [+ {+ "file": "tps51219rtet.step",+ "role": "plain",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 3,+ 3,+ 0.785+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "3eb81ffac423a66cdcfead8efe56401da171edaf1f2257049aad7b2d3900f6c8",+ "checked": "2026-10-07",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ },+ {+ "file": "tps51219rtet-etched.step",+ "role": "eda",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 3,+ 3,+ 0.785+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "9e26ab52e4e2796680c2963266abf2dd518af280810c7bfd04d88d0a775ee130",+ "checked": "2026-10-07",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ }+ ]+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}