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Ray tps51217dscr: specified limits as data (metadata.characteristics, 60 rows from the datasheet) f05aa04 11d ago

TPS51217DSCR

Texas Instruments · DC-DC Controllers · WSON-10-EP(3x3)

TPS51217DSCR from Texas Instruments, in a WSON-10-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PGOOD output Power-good window comparator open-drain output that needs a pull-up to 5 V or an appropriate signal voltage, with continuous current capability of 1 mA; it goes high 1 ms after VFB is within limits and goes low after a 2-µs delay when VFB leaves the limits.
2 TRIP input Overcurrent-limit (OCL) detection threshold setting pin, which sources 10 µA at room temperature with a 4700 ppm/°C coefficient to set the OCL trip voltage for 0.2 V ≤ V(TRIP) ≤ 3 V.
3 EN input SMPS enable pin; short it to GND to disable the device, with enable threshold of 1.8 V and disable threshold of 0.5 V.
4 VFB input SMPS feedback input to which the feedback resistor divider is connected, regulating to the 0.6 V internal reference.
5 TRAN input Dynamic voltage change control pin that forces CCM and masks PGOOD, OVP and UVP when pulled up or pulled down, with masking ending 900 µs after TRAN returns to normal; leave it open when dynamic voltage change is not used.
6 DRVL output Synchronous MOSFET driver output referenced to GND, with gate drive voltage defined by the V5IN voltage.
7 V5IN power_in 5 V supply input that accepts +30% / -10% variation (4.5 V to 6.5 V recommended operating range).
8 SW input Switch node that serves as the high-side MOSFET gate drive return and is also used for on-time generation and output discharge; SW may see -1 V to 28 V in recommended operation.
9 DRVH output High-side MOSFET driver output referenced to the floating SW node, with gate drive voltage defined by the voltage across the VBST-to-SW bootstrap flying capacitor.
10 VBST input Supply input for the high-side driver (bootstrap terminal) that connects to a flying capacitor to the SW pin and is internally connected to V5IN through the bootstrap MOSFET switch.
11 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-10-EP(3x3)
Category Power Supply Chip
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage V5IN V5IN 4.5 6.5 V 3
VBST voltage range VBST -0.1 34.5 V 3
SW input voltage range SW -1 28 V 3
SW input voltage range (transient) SW(1) -4 28 V This voltage should be applied for less than 30% of the repetitive period 3
VBST voltage range (vs SW) VBST(2) -0.1 6.5 V Voltage values are with respect to the SW terminal 3
EN, TRIP, VFB, TRAN voltage range -0.1 6.5 V 3
DRVH output voltage range DRVH -1 34.5 V 3
DRVH output voltage range (transient) DRVH(1) -4 34.5 V This voltage should be applied for less than 30% of the repetitive period 3
DRVH output voltage range (vs SW) DRVH(2) -0.1 6.5 V Voltage values are with respect to the SW terminal 3
DRVL output voltage range DRVL -0.3 6.5 V 3
PGOOD output voltage range PGOOD -0.1 6.5 V 3
Operating free-air temperature TA -40 85 °C 3
VBST input voltage range VBST -0.3 37 V With respect to network ground 2
VBST voltage (vs SW) VBST(3) -0.3 7 V With respect to SW terminal 2
SW input voltage range SW -5 30 V With respect to network ground 2
V5IN, EN, TRIP, VFB, TRAN input voltage range -0.3 7 V With respect to network ground 2
DRVH output voltage range DRVH -5 37 V With respect to network ground 2
DRVH output voltage (vs SW) DRVH(3) -0.3 7 V With respect to SW terminal 2
DRVH output voltage, pulse width < 20 ns DRVH -2.5 7 V Pulse width < 20 ns; with respect to SW terminal 2
DRVL output voltage range DRVL -0.5 7 V 2
DRVL output voltage, pulse width < 20 ns DRVL -2.5 7 V Pulse width < 20 ns 2
PGOOD output voltage range PGOOD -0.3 7 V 2
Junction temperature range TJ 150 °C 2
Storage temperature range TSTG -55 150 °C 2
V5IN supply current I(V5IN) 320 500 µA TA = 25°C, No Load, V(EN) = 5 V, V(VFB) = 0.63 V 3
V5IN shutdown current ISD(V5IN) 1 µA TA = 25°C, No Load, V(EN) = 0 V 3
VFB regulation voltage V(VFB) 0.6 0.603 0.606 V TA = 25°C, skip mode 3
VFB regulation voltage V(VFB) 0.5974 0.603 0.6086 V TA = 0°C to 85°C, skip mode 3
VFB regulation voltage V(VFB) 0.596 0.603 0.61 V TA = –40°C to 85°C, skip mode 3
Output discharge current from SW pin IDischg 5 13 mA V(EN) = 0 V, V(SW) = 0.5 V 3
DRVH resistance, source R(DRVH) 1.5 3 Ω Source, I(DRVH) = –50 mA 3
DRVH resistance, sink R(DRVH) 0.7 1.8 Ω Sink, I(DRVH) = 50 mA 3
DRVL resistance, source R(DRVL) 1 2.2 Ω Source, I(DRVL) = –50 mA 3
DRVL resistance, sink R(DRVL) 0.5 1.2 Ω Sink, I(DRVL) = 50 mA 3
Dead time, DRVH-off to DRVL-on tD 7 17 30 ns DRVH-off to DRVL-on 3
Dead time, DRVL-off to DRVH-on tD 10 22 35 ns DRVL-off to DRVH-on 3
Minimum off-time tOFF(min) 150 260 400 ns TA = 25°C 3
Switching frequency fSW 312 340 368 kHz TA = 25°C 3
PG threshold, PG in from lower V(THPG) 92.5 95 97.5 % PG in from lower 4
PG threshold, PG in from higher V(THPG) 107.5 110 112.5 % PG in from higher 4
PG delay tPGDEL 0.8 1 1.2 ms Delay for PG in 4
EN enable voltage V(EN) 1.8 V Enable 4
EN disable voltage V(EN) 0.5 V Disable 4
TRAN voltage, TRAN open V(TRAN) 1.83 1.88 1.93 V TRAN open 4
TRAN voltage, mask PG/OVP/UVP high side V(TRAN) 2.03 2.08 2.13 V Mask PG, OVP and UVP, high side 4
TRAN voltage, mask PG/OVP/UVP low side V(TRAN) 1.62 1.67 1.72 V Mask PG, OVP and UVP, low side 4
TRIP source current I(TRIP) 9 10 11 µA V(TRIP) = 1 V, TA = 25°C 4
Current limit threshold VOCL 355 375 395 mV V(TRIP) = 3 V 4
Current limit threshold VOCL 185 200 215 mV V(TRIP) = 1.6 V 4
Current limit threshold VOCL 17 25 33 mV V(TRIP) = 0.2 V 4
Negative current limit threshold VOCLN -395 -375 -355 mV V(TRIP) = 3 V 4
Negative current limit threshold VOCLN -215 -200 -185 mV V(TRIP) = 1.6 V 4
Negative current limit threshold VOCLN -33 -25 -17 mV V(TRIP) = 0.2 V 4
OVP trip threshold V(OVP) 115 120 125 % OVP detect 4
UVP trip threshold V(UVP) 65 70 75 % UVP detect 4
V5IN UVLO wake-up threshold 4.2 4.38 4.5 V Wake up 4
V5IN UVLO shutdown threshold 3.7 3.93 4.1 V Shutdown 4
Thermal shutdown threshold TSDN 145 °C Specified by design. Not production tested. 4
I(TRIP) temperature coefficient I(TRIP) 4700 ppm/°C On the basis of 25°C 4
Package power derating factor 15 mW/°C Above TA = 25°C 2

CAD (KiCad official)

  • Symbol: TPS51217DSCR
  • Footprint: Package_SON:VSON-10-1EP_3x3mm_P0.5mm_EP1.2x2mm
  • 3D model: WSON-10-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: tps51217dscr-etched.step / tps51217dscr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps51217dscr.step / tps51217dscr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (30 pp, sha256 570e4a6cca99822c, retrieved 2026-10-11, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF