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TPS3700DSER

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Texas Instruments Comparators, WSON-6(1.5x1.5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPS3700DSER

Texas Instruments · Comparators · WSON-6(1.5x1.5)

TPS3700DSER from Texas Instruments, in a WSON-6(1.5x1.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUTB output INB- comparator open-drain output that is driven low when the voltage on INB- exceeds VITP and goes high when the sense voltage returns below VITP - VHYS.
2 VDD power_in Supply voltage input; connect a 1.8-V to 18-V supply to power the device, with a 0.1-µF ceramic capacitor placed close to this pin as good analog practice.
3 INB- input Connected to the voltage to be monitored through an external resistor divider; when the voltage exceeds the threshold VITP, OUTB is driven low.
4 INA+ input Connected to the voltage to be monitored through an external resistor divider; when the voltage drops below the threshold VITP - VHYS, OUTA is driven low.
5 GND power_in Ground reference for the device.
6 OUTA output INA+ comparator open-drain output that is driven low when the voltage is below VITP - VHYS and goes high when the sense voltage returns above VITP.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-6(1.5x1.5)
Category Amplifiers/Comparators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VDD VDD -0.3 20 V 5
Output voltage OUTA, OUTB OUTA, OUTB -0.3 20 V 5
Input voltage INA+, INB- INA+, INB- -0.3 7 V 5
Output terminal current 40 mA 5
Operating junction temperature TJ -40 125 °C 5
Storage temperature Tstg -65 150 °C 5
Electrostatic discharge, human body model (HBM) V(ESD) -2500 2500 V Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins 5
Electrostatic discharge, charged device model (CDM) V(ESD) -1000 1000 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins 5
Supply voltage VDD VDD 1.8 18 V 5
Input voltage INA+, INB- VI 0 6.5 V 5
Output voltage OUTA, OUTB VO 0 18 V 5
Supply voltage range VDD 1.8 18 V 6
Power-on reset voltage V(POR) 0.8 V VOLmax = 0.2 V, I(OUTA/B) = 15 µA 6
Positive-going input threshold voltage, VDD = 1.8 V VIT+ 396 400 404 mV VDD = 1.8 V 6
Positive-going input threshold voltage, VDD = 18 V VIT+ 396 400 404 mV VDD = 18 V 6
Negative-going input threshold voltage, VDD = 1.8 V VIT- 387 394.5 400 mV VDD = 1.8 V 6
Negative-going input threshold voltage, VDD = 18 V VIT- 387 394.5 400 mV VDD = 18 V 6
Hysteresis voltage Vhys 5.5 12 mV 6
Input current at the INA+ terminal I(INA+) -25 1 25 nA VDD = 1.8 V and 18 V, VI = 6.5 V 6
Input current at the INB- terminal I(INB-) -15 1 15 nA VDD = 1.8 V and 18 V, VI = 0.1 V 6
Low-level output voltage, VDD = 1.3 V VOL 250 mV VDD = 1.3 V, IO = 0.4 mA 6
Low-level output voltage, VDD = 1.8 V VOL 250 mV VDD = 1.8 V, IO = 3 mA 6
Low-level output voltage, VDD = 5 V VOL 250 mV VDD = 5 V, IO = 5 mA 6
Open-drain output leakage current Ilkg(OD) 300 nA VDD = 1.8 V and 18 V, VO = VDD 6
Supply current IDD 5.5 11 µA VDD = 1.8 V, no load 6
Supply current IDD 6 13 µA VDD = 5 V 6
Supply current IDD 7 13 µA VDD = 18 V 6
Start-up delay 150 450 µs 6
Undervoltage lockout UVLO 1.3 1.7 V VDD falling 6
Recommended thermal resistance, junction-to-ambient (WSON DSE) RθJA 194.9 °C/W DSE (WSON) 6 pins 5
Junction-to-case (top) thermal resistance (WSON DSE) RθJC(top) 128.9 °C/W DSE (WSON) 6 pins 5
Junction-to-board thermal resistance (WSON DSE) RθJB 153.8 °C/W DSE (WSON) 6 pins 5
Junction-to-top characterization parameter (WSON DSE) ψJT 11.9 °C/W DSE (WSON) 6 pins 5
Junction-to-board characterization parameter (WSON DSE) ψJB 157.4 °C/W DSE (WSON) 6 pins 5
High-to-low propagation delay tPHL 18 µs VDD = 5 V, 10-mV input overdrive, RP = 10 kΩ, VOH = 0.9 × VDD, VOL = 400 mV, see Figure 1 7
Low-to-high propagation delay tPLH 29 µs VDD = 5 V, 10-mV input overdrive, RP = 10 kΩ, VOH = 0.9 × VDD, VOL = 400 mV, see Figure 1 7
Output rise time tr 2.2 µs VDD = 5 V, 10-mV input overdrive, RP = 10 kΩ, VO = (0.1 to 0.9) × VDD 7
Output fall time tf 0.22 µs VDD = 5 V, 10-mV input overdrive, RP = 10 kΩ, VO = (0.1 to 0.9) × VDD 7

CAD (KiCad official)

  • Symbol: TPS3700DSER
  • Footprint: Package_SON:WSON-6_1.5x1.5mm_P0.5mm
  • 3D model: WSON-6(1.5x1.5) (KiCad packages3D, STEP)
  • 3D model files: tps3700dser-etched.step / tps3700dser-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps3700dser.step / tps3700dser.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (27 pp, sha256 93d2b46073af7344, retrieved 2026-10-21, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF