TPS2HB50AQPWPRQ1 from Texas Instruments, in a HTSSOP-16-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	GND	power_in	Device ground reference for all voltages, with the datasheet specifying operating voltages measured with respect to device GND.
2	SNS	output	Analog sense output for load current, device temperature, and fault indication, with the sense pin voltage limited to -1 V to 7 V in recommended operating conditions.
3	LATCH	input	Sets the fault handling behavior to latched or auto-retry, with the LATCH voltage limited to -1 V to 5.5 V in recommended operating conditions.
4	EN1	input	Channel 1 active-high control input, with the enable voltage limited to -1 V to 5.5 V in recommended operating conditions.
5	ILIM1	output	Connect a pull-up resistor to VBB to set the current-limit threshold on channel 1, with floating leaving the default internal threshold.
6	VOUT1	output	Channel 1 output to the load, which is one of three VOUT1 pins.
7	VOUT1	output	Channel 1 output to the load, which is one of three VOUT1 pins.
8	VOUT1	output	Channel 1 output to the load, which is one of three VOUT1 pins.
9	VOUT2	output	Channel 2 output to the load, which is one of three VOUT2 pins.
10	VOUT2	output	Channel 2 output to the load, which is one of three VOUT2 pins.
11	VOUT2	output	Channel 2 output to the load, which is one of three VOUT2 pins.
12	ILIM2	output	Connect a pull-up resistor to VBB to set the current-limit threshold on channel 2, with floating leaving the default internal threshold.
13	EN2	input	Channel 2 active-high control input, with the enable voltage limited to -1 V to 5.5 V in recommended operating conditions.
14	SEL1	input	Diagnostics select 1, which selects the TJ sensing feature, with the select voltage limited to -1 V to 5.5 V in recommended operating conditions.
15	SEL2	input	Diagnostics select 2, which enables CH2 current sensing and open load detection when set high, with the select voltage limited to -1 V to 5.5 V in recommended operating conditions.
16	DIA_EN	input	Active-high diagnostic enable, with the diagnostic enable voltage limited to -1 V to 5.5 V in recommended operating conditions.
17	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	HTSSOP-16-EP
Category	Power Management (PMIC)
Pins	17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Current limit threshold	ICL	7	10	14.4	A	Version A, RILIM = 5 kΩ, TJ = -40°C to 150°C	8
Current limit threshold	ICL	1.325	2	3.2	A	Version A, RILIM = 25 kΩ, TJ = -40°C to 150°C	8
Current limit threshold	ICL			11.8	A	Version A, RILIM = GND, open, or out of range, TJ = -40°C to 150°C	8
Current limit ratio	KCL	35	50	80	A * kΩ	Version A	8
VDS clamp voltage	VDSCLAMP	40		46	V		7
VBB clamp voltage	VBBCLAMP	58		76	V		7
VBB undervoltage lockout falling	VUVLOF	2		3	V	Measured with respect to the GND pin of the device	7
VBB undervoltage lockout rising	VUVLOR	2.2		3	V	Measured with respect to the GND pin of the device	7
Standby current (total device leakage)	ISB			0.5	µA	VBB = 13.5 V, TJ = 25°C, VENx = VDIA_EN = 0 V, VOUT = 0 V	7
Standby current (total device leakage)	ISB			4	µA	VBB = 13.5 V, TJ = 125°C, VENx = VDIA_EN = 0 V, VOUT = 0 V	7
Continuous load current, per channel	ILNOM			3	A	Two channels enabled, TAMB = 70°C	7
Continuous load current, per channel	ILNOM			4.5	A	One channel enabled, TAMB = 70°C	7
Output leakage current (per channel)	IOUT(standby)		0.01	0.5	µA	VBB = 13.5 V, TJ = 25°C, VENx = VDIA_EN = 0 V, VOUT = 0 V	7
Output leakage current (per channel)	IOUT(standby)			1.5	µA	VBB = 13.5 V, TJ = 125°C, VENx = VDIA_EN = 0 V, VOUT = 0 V	7
Quiescent current	IQ		3	6	mA	VBB = 13.5 V, VENx = VDIA_EN = 5 V, IOUTx = 0 A	7
Standby mode delay time	tSTBY	12	17	22	ms	VENx = VDIA_EN = 0 V to standby	7
On-resistance (includes MOSFET and package)	RON			50	mΩ	TJ = 25°C, 6 V ≤ VBB ≤ 28 V, IOUT1 = IOUT2 > 1 A	7
On-resistance (includes MOSFET and package)	RON			100	mΩ	TJ = 150°C, 6 V ≤ VBB ≤ 28 V, IOUT1 = IOUT2 > 1 A	7
On-resistance (includes MOSFET and package)	RON			75	mΩ	TJ = 25°C, 3 V ≤ VBB ≤ 6 V, IOUT1 = IOUT2 > 1 A	7
On-resistance during reverse polarity	RON(REV)			50	mΩ	TJ = 25°C, -18 V ≤ VBB ≤ -8 V	7
On-resistance during reverse polarity	RON(REV)			100	mΩ	TJ = 105°C, -18 V ≤ VBB ≤ -8 V	7
Current sense accuracy	ISNSI	-5		5	%	VEN = VDIA_EN = 5 V, VSEL1 = 0 V, IOUT = 3 A	8
Current sense accuracy	ISNSI	-6		6	%	VEN = VDIA_EN = 5 V, VSEL1 = 0 V, IOUT = 100 mA	8
Current sense accuracy	ISNSI	-11		11	%	VEN = VDIA_EN = 5 V, VSEL1 = 0 V, IOUT = 50 mA	8
Current sense accuracy	ISNSI	-28		28	%	VEN = VDIA_EN = 5 V, VSEL1 = 0 V, IOUT = 20 mA	8
Temperature sense current	ISNST	0	0.12	0.29	mA	VDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 0 V, TJ = -40°C	8
Temperature sense current	ISNST	0.68	0.85	1.02	mA	VDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 0 V, TJ = 25°C	8
Temperature sense current	ISNST	1.25	1.52	1.79	mA	VDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 0 V, TJ = 85°C	8
Temperature sense current	ISNST	1.61	1.96	2.31	mA	VDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 0 V, TJ = 125°C	8
Temperature sense current	ISNST	1.8	2.25	2.7	mA	VDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 0 V, TJ = 150°C	8
ISNS fault high-level	ISNSFH	4	4.5	5.3	mA	VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X	8
Open-load (OL) detection voltage	VOL	2	3	4	V	VENx = 0 V, VDIA_EN = 5 V	8
OL and STB indication time from ENx falling	tOL1	300	500	700	µs	VENx = 5 V to 0 V, VDIA_EN = 5 V, VSEL1 = 0 V, IOUT = 0 mA, VOUTx = 4 V	8
Thermal shutdown	TABS		150		°C		8
Relative thermal shutdown	TREL		50		°C		8
Thermal shutdown hysteresis	THYS		28		°C		8
Input voltage low-level (EN1, EN2)	VIL, ENx			0.8	V	No GND network diode	9
Input voltage high-level (EN1, EN2)	VIH, ENx	2			V	No GND network diode	9
Input voltage high-level (DIA_EN)	VIH, DIA_EN	2			V	No GND network diode	9
Maximum continuous supply voltage	VBB			36	V		6
Load dump voltage	VLD			40	V	ISO16750-2:2010(E)	6
Reverse battery voltage	VRev	-18			V	t ≤ 3 minutes	6
Enable pin voltage	VEN1, VEN2	-1		7	V		6
LATCH pin voltage	VLATCH	-1		7	V		6
Diagnostic enable pin voltage	VDIA_EN	-1		7	V		6
Sense pin voltage	VSNS	-1		18	V		6
Select pin voltage	VSEL1, VSEL2	-1		7	V		6
Reverse ground current	IGND	-50			mA	VBB < 0 V	6
Energy dissipation during turnoff (single pulse)	ETOFF			21	mJ	Single pulse, one channel, LOUT = 5 mH, TJ,start = 125°C	6
Energy dissipation during turnoff (repetitive pulse)	ETOFF			8	mJ	Repetitive pulse, one channel, LOUT = 5 mH, TJ,start = 125°C	6
Maximum junction temperature	TJ			150	°C		6
Maximum junction temperature - limited duration	TJ			170	°C	t < 100 hours	6
Storage temperature	Tstg	-65		150	°C		6
Nominal supply voltage	VBB	6		18	V	Nominal supply voltage	6
Extended supply voltage	VBB	3		28	V	Extended supply voltage	6
Enable voltage	VEN1, VEN2	-1		5.5	V		6
Operating free-air temperature	TA	-40		125	°C		6
Junction-to-ambient thermal resistance	RθJA		34.6		°C/W	PWP (HTSSOP) 16 pins, 4-layer PCB	7

CAD (KiCad official)

Symbol: TPS2HB50AQPWPRQ1
Footprint: Package_SO:TSSOP-16-1EP_4.4x5mm_P0.65mm
3D model: HTSSOP-16-EP (KiCad packages3D, STEP)
3D model files: tps2hb50aqpwprq1-etched.step / tps2hb50aqpwprq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps2hb50aqpwprq1.step / tps2hb50aqpwprq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (54 pp, sha256 4549a67d7986f86d, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

TPS2HB50AQPWPRQ1

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