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verification.json Verified: Published by the parts factory: tier mfr, 17 pins · Ray 18h ago

TPS2HB16FQPWPRQ1

Texas Instruments · Power Distribution Switches · HTSSOP-16-EP

TPS2HB16FQPWPRQ1 from Texas Instruments, in a HTSSOP-16-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Device ground; reverse ground current IGND is limited to -50 mA when VBB < 0 V.
2 SNS output Analog sense output that reports load current on version F, and goes to the predefined ISNSFH level on a fault; sense pin voltage is limited to -1 V to 18 V absolute maximum.
3 LATCH input Sets fault handling behavior (latched or auto-retry); LATCH voltage is limited to -1 V to 5.5 V recommended.
4 EN1 input Channel 1 control input, active high; enable voltage is limited to -1 V to 5.5 V recommended.
5 FLT1 output Open-drain fault indication for channel 1, triggered by channel 1 overcurrent, overtemperature or open load.
6 VOUT1 power_out Channel 1 output to the load.
7 VOUT1 power_out Channel 1 output to the load.
8 VOUT1 power_out Channel 1 output to the load.
9 VOUT2 power_out Channel 2 output to the load.
10 VOUT2 power_out Channel 2 output to the load.
11 VOUT2 power_out Channel 2 output to the load.
12 FLT2 output Open-drain fault indication for channel 2, triggered by channel 2 overcurrent, overtemperature or open load.
13 EN2 input Channel 2 control input, active high; enable voltage is limited to -1 V to 5.5 V recommended.
14 SEL1 input Diagnostics select 1; no functionality on version F, so tie to device ground through a 10 kΩ resistor.
15 SEL2 input Diagnostics select 2; selects the channel reported on the SNS output, with select voltage limited to -1 V to 5.5 V recommended.
16 DIA_EN input Diagnostic enable, active high; diagnostic enable voltage is limited to -1 V to 5.5 V recommended.
17 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package HTSSOP-16-EP
Category Power Management (PMIC)
Pins 17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum continuous supply voltage VBB 36 V 6
Load dump voltage VLD 40 V ISO16750-2:2010(E) 6
Reverse battery voltage VRev -18 V t ≤ 3 minutes 6
Enable pin voltage VEN1, VEN2 -1 7 V 6
Sense pin voltage VSNS -1 18 V 6
Reverse ground current IGND -50 mA VBB < 0 V 6
Energy dissipation during turnoff, single pulse ETOFF 50 mJ Single pulse, one channel, LOUT = 5 mH, TJ,start = 125°C 6
Maximum junction temperature TJ 150 °C 6
Storage temperature Tstg -65 150 °C 6
Nominal supply voltage VBB 6 18 V 6
Extended supply voltage VBB 3 28 V 6
Enable voltage VEN1, VEN2 -1 5.5 V 6
Operating free-air temperature TA -40 125 °C 6
VBB clamp voltage VBBCLAMP 58 76 V 7
VDS clamp voltage VDSCLAMP 40 46 V 7
VBB undervoltage lockout falling VUVLOF 2 3 V Measured with respect to the GND pin of the device 7
VBB undervoltage lockout rising VUVLOR 2.2 3 V Measured with respect to the GND pin of the device 7
Standby current ISB 0.5 µA VBB = 13.5 V, TJ = 25°C, VENx = VDIA_EN = 0 V, VOUT = 0 V 7
Standby current ISB 4 µA VBB = 13.5 V, TJ = 125°C, VENx = VDIA_EN = 0 V, VOUT = 0 V 7
Continuous load current, per channel ILNOM 5 A Two channels enabled, TAMB = 70°C 7
Continuous load current, per channel ILNOM 7 A One channel enabled, TAMB = 70°C 7
Output leakage current per channel IOUT(standby) 0.01 0.5 µA VBB = 13.5 V, TJ = 25°C, VENx = VDIA_EN = 0 V, VOUT = 0 V 7
Output leakage current per channel IOUT(standby) 1.5 µA VBB = 13.5 V, TJ = 125°C, VENx = VDIA_EN = 0 V, VOUT = 0 V 7
Current consumption in diagnostic mode IDIA 3 6 mA VBB = 13.5 V, ISNS = 0 mA, VENx = 0 V, VDIA_EN = 5 V, VOUT = 0V 7
Quiescent current IQ 3 6 mA VBB = 13.5 V, VENx = VDIA_EN = 5 V, IOUTx = 0 A 7
Standby mode delay time tSTBY 12 17 22 ms VENx = VDIA_EN = 0 V to standby 7
On-resistance RON 16 mΩ TJ = 25°C, 6 V ≤ VBB ≤ 28 V, IOUT1 = IOUT2 > 1 A 7
On-resistance RON 40 mΩ TJ = 150°C, 6 V ≤ VBB ≤ 28 V, IOUT1 = IOUT2 > 1 A 7
On-resistance RON 30 mΩ TJ = 25°C, 3 V ≤ VBB ≤ 6 V, IOUT1 = IOUT2 > 1 A 7
On-resistance during reverse polarity RON(REV) 16 mΩ TJ = 25°C, -18 V ≤ VBB ≤ -8 V 7
On-resistance during reverse polarity RON(REV) 40 mΩ TJ = 105°C, -18 V ≤ VBB ≤ -8 V 7
Current sense ratio IOUTx/ISNS KSNS 3000 IOUTX = 1 A 7
Current sense accuracy ISNSI -5 5.3 % VEN = VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X, IOUT = 6 A 8
Current sense accuracy ISNSI -6 6.3 % VEN = VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X, IOUT = 300 mA 8
Current sense accuracy ISNSI -9 9.6 % VEN = VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X, IOUT = 100 mA 8
Current sense accuracy ISNSI -19.5 18.7 % VEN = VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X, IOUT = 50 mA 8
Current sense accuracy ISNSI -59.3 53.1 % VEN = VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X, IOUT = 20 mA 8
ISNS fault high-level ISNSFH 4 4.5 5.3 mA VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X 8
Current limit threshold, Version F, TJ = -40°C to 60°C ICL 51.65 60 76.32 A Device Version F, TJ = -40°C to 60°C 8
Current limit threshold, Version F, TJ = 150°C ICL 42.16 48 57.6 A Device Version F, TJ = 150°C 8
Open-load detection voltage VOL 2 3 4 V VENx = 0 V, VDIA_EN = 5 V 8
OL and STB indication time from ENx falling tOL1 300 500 700 µs VENx = 5 V to 0 V, VDIA_EN = 5 V, VSEL1 = 0 V, IOUT = 0 mA, VOUTx = 4 V 8
OL and STB indication time from DIA_EN rising tOL2 50 µs VENx = 0 V, VDIA_EN = 0 V to 5 V, VSEL1 = 0 V, IOUT = 0 mA, VOUTx = 4 V 8
OL and STB indication time from VOUT rising tOL3 50 µs VENx = 0 V, VDIA_EN = 5 V, VSEL1 = 0 V, IOUT = 0 mA, VOUTx = 0 V to 4 V 8
Thermal shutdown TABS 150 °C VBB = 3 V to 28 V 9
Relative thermal shutdown TREL 50 °C 9
Thermal shutdown hysteresis THYS 28 °C 9
Fault shutdown indication-time tFAULT 50 µs VDIA_EN = 5 V, time between switch shutdown and ISNS settling at ISNSFH 9
Retry time tRETRY 1 2 3 ms Time from fault shutdown until switch re-enable (thermal shutdown or current limit) 9
Turnon time tON 39 87 145 µs VBB = 13.5 V, RL ≤ 4 Ω, 50% EN rising to 80% VOUT rising 10
Turnoff time tOFF 39 87 147 µs VBB = 13.5 V, RL ≤ 4 Ω, 50% EN rising to 80% VOUT rising 10
VOUTx rising slew rate SRR 0.1 0.4 0.7 V/µs VBB = 13.5 V, 20% to 80% of VOUT, RL ≤ 4 Ω 10
VOUTx falling slew rate SRF 0.1 0.4 0.7 V/µs VBB = 13.5 V, 80% to 20% of VOUT, RL ≤ 4 Ω 10
Input voltage low-level, ENx VIL, ENx 0.8 V No GND network diode 9
Input voltage high-level, ENx VIH, ENx 2 V No GND network diode 9
Junction-to-ambient thermal resistance RθJA 32.9 °C/W PWP (HTSSOP) 16 pins, 4-layer PCB per JESD51-5 and JESD51-7 7
Junction-to-board thermal resistance RθJB 9 °C/W PWP (HTSSOP) 16 pins, 4-layer PCB per JESD51-5 and JESD51-7 7
Junction-to-case (bottom) thermal resistance RθJC(bot) 2 °C/W PWP (HTSSOP) 16 pins, 4-layer PCB per JESD51-5 and JESD51-7 7

CAD (KiCad official)

  • Symbol: TPS2HB16FQPWPRQ1
  • Footprint: Package_SO:TSSOP-16-1EP_4.4x5mm_P0.65mm
  • 3D model: HTSSOP-16-EP (KiCad packages3D, STEP)
  • 3D model files: tps2hb16fqpwprq1-etched.step / tps2hb16fqpwprq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps2hb16fqpwprq1.step / tps2hb16fqpwprq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (58 pp, sha256 83860ae4e964362c, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF