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TPS2552DRVT-1

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Texas Instruments Power Distribution Switches, WSON-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentpower management (pmic)tps2552drvt-1factory-2.0.0extractor-text

Verified TPS2552DRVT-1

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier mfr, 7 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: TPS2552DRVT-1 · WSON-6-EP(2x2) · 7 pins
  • ✓copper: 7 copper pads, none touching another net
  • ✓datasheet: all 7 pin names found in the 46-page datasheet
  • ✓distributor: lcsc C2150036, digikey 296-23998-2-ND, mouser 595-TPS2552DRVT-1
  • ✓family: WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-6_8aylbk/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 7 pins = 7 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 7 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ tps2552drvt-1.kicad_sym✓ tps2552drvt-1.kicad_mod✓ tps2552drvt-1.step
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TPS2552DRVT-1

Texas Instruments · Power Distribution Switches · WSON-6-EP(2x2)

TPS2552DRVT-1 from Texas Instruments, in a WSON-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT power_out Power-switch output; the current-limited switch delivers load current from IN to this pin.
2 ILIM output External resistor used to set the current-limit threshold; recommended 15kΩ ≤ RILIM ≤ 232kΩ (10kΩ ≤ RILIM ≤ 232kΩ for TPS25530-1).
3 FAULT output Active-low open-drain output, asserted during overcurrent, overtemperature, or reverse-voltage conditions.
4 EN input Enable input for the TPS2552 (active low); logic low turns on the power switch.
5 GND power_in Ground connection; connect externally to the PowerPAD.
6 IN power_in Input voltage; connect a 0.1µF or greater ceramic capacitor from IN to GND as close to the IC as possible.
7 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-6-EP(2x2)
Category Power Management (PMIC)
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Voltage range on IN, OUT, EN or EN, ILIM, FAULT -0.3 7 V 5
Voltage range from IN to OUT -7 7 V 5
Continuous FAULT sink current 0 25 mA 5
ILIM source current 0 1 mA 5
Maximum junction temperature TJ -40 150 °C 5
Storage temperature Tstg -65 150 °C 5
Input voltage, IN VIN 2.5 6.5 V 5
Enable voltage TPS2552/52-1 VEN 0 6.5 V 5
High-level input voltage on EN or EN VIH 1.1 V 5
Low-level input voltage on EN or EN VIL 0.66 V 5
Continuous output current, OUT IOUT 1.5 A -40°C ≤ TJ ≤ 105°C 5
Continuous output current, OUT IOUT 1.2 A -40°C ≤ TJ ≤ 125°C 5
Current-limit threshold resistor range from ILIM to GND RILIM 15 232 kΩ nominal 1% 5
Continuous FAULT sink current IO 0 10 mA 5
Operating virtual junction temperature TJ -40 105 °C IOUT ≤ 1.5A 6
Junction-to-ambient thermal resistance RθJA 72 °C/W DRV (WSON) 6 pins 6
Junction-to-case (top) thermal resistance RθJC(top) 85.3 °C/W DRV (WSON) 6 pins 6
Junction-to-board thermal resistance RθJB 41.3 °C/W DRV (WSON) 6 pins 6
Junction-to-top characterization parameter ψJT 1.7 °C/W DRV (WSON) 6 pins 6
Junction-to-board characterization parameter ψJB 41.7 °C/W DRV (WSON) 6 pins 6
Junction-to-case (bottom) thermal resistance RθJC(bot) 11.1 °C/W DRV (WSON) 6 pins 6
Static drain-source on-state resistance rDS(on) 100 115 mΩ DRV package, TJ = 25°C 6
Static drain-source on-state resistance rDS(on) 140 mΩ DRV package, -40°C ≤ TJ ≤ 105°C 6
Static drain-source on-state resistance rDS(on) 150 mΩ DRV package, -40°C ≤ TJ ≤ 125°C 6
Rise time, output tr 1.1 1.5 ms CL = 1µF, RL = 100Ω, VIN = 6.5V 6
Rise time, output tr 0.7 1 ms CL = 1µF, RL = 100Ω, VIN = 2.5V 6
Fall time, output tf 0.2 0.5 ms CL = 1µF, RL = 100Ω, VIN = 6.5V 6
Enable pin turn on/off threshold 0.66 1.1 V 6
Input current IEN -0.5 0.5 µA VEN = 0V or 6.5V 6
Turnon time ton 3 ms CL = 1µF, RL = 100Ω 6
Turnoff time toff 3 ms CL = 1µF, RL = 100Ω 6
Current-limit threshold and short-circuit current, RILIM = 15kΩ IOS 1610 1700 1800 mA -40°C ≤ TJ ≤ 105°C 7
Current-limit threshold and short-circuit current, RILIM = 20kΩ IOS 1215 1295 1375 mA TJ = 25°C 7
Current-limit threshold and short-circuit current, RILIM = 20kΩ IOS 1200 1295 1375 mA -40°C ≤ TJ ≤ 125°C 7
Current-limit threshold and short-circuit current, RILIM = 49.9kΩ IOS 490 520 550 mA TJ = 25°C 7
Current-limit threshold and short-circuit current, RILIM = 49.9kΩ IOS 475 520 565 mA -40°C ≤ TJ ≤ 125°C 7
Current-limit threshold and short-circuit current, RILIM = 210kΩ IOS 110 130 150 mA 7
Current-limit threshold and short-circuit current, ILIM shorted to IN IOS 50 75 100 mA 7
Reverse-voltage comparator trip point (VOUT, VIN) 95 135 190 mV 7
Time from reverse-voltage condition to MOSFET turn off 3 5 7 ms VIN = 5V 7
Supply current, low-level output IIN_off 0.1 1 µA VIN = 6.5V, No load on OUT, VEN = 6.5V or VEN = 0V 7
Supply current, high-level output IIN_on 120 150 µA VIN = 6.5V, No load on OUT, RILIM = 20kΩ 7
Supply current, high-level output IIN_on 100 130 µA VIN = 6.5V, No load on OUT, RILIM = 210kΩ 7
Reverse leakage current IREV 0.01 1 µA VOUT = 6.5V, VIN = 0V, TJ = 25°C 7
Undervoltage lockout low-level input voltage, IN UVLO 2.35 2.45 V VIN rising 7
Hysteresis, IN 25 mV TJ = 25°C 7
Output low voltage, FAULT VOL 180 mV I/FAULT = 1mA 7
Off-state leakage 1 µA V/FAULT = 6.5V 7
FAULT deglitch, overcurrent 3 7.5 11 ms FAULT assertion or de-assertion due to overcurrent condition 7
FAULT deglitch, reverse-voltage 2 4 7 ms FAULT assertion or de-assertion due to reverse-voltage condition 7
Thermal shutdown threshold 155 °C 7
Thermal shutdown threshold in current-limit 135 °C 7
Thermal shutdown hysteresis 10 °C 7

CAD (KiCad official)

  • Symbol: TPS2552DRVT-1
  • Footprint: Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm
  • 3D model: WSON-6-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: tps2552drvt-1-etched.step / tps2552drvt-1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps2552drvt-1.step / tps2552drvt-1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (46 pp, sha256 edd76d150b073ae8, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF