TPS2552DDBVT from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	IN	power_in	Input voltage pin; connect a 0.1 μF or greater ceramic capacitor from IN to GND as close to the IC as possible.
2	GND	power_in	Ground connection; connect externally to the PowerPAD.
3	EN	input	Enable input for the TPS2552D; logic low turns on the power switch (active low).
4	FAULT	output	Active-low open-drain output, asserted during overcurrent, overtemperature, or reverse-voltage conditions.
5	ILIM	output	External resistor used to set the current-limit threshold; recommended 15 kΩ ≤ RILIM ≤ 232 kΩ.
6	OUT	power_out	Power-switch output.

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	SOT-23-6
Category	Power Management (PMIC)
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Input voltage, IN	VIN	2.7		6.5	V		5
Enable voltage TPS2552D	VEN	0		6.5	V	TPS2552D	5
High-level input voltage on EN	VIH	1.1			V		5
Low-level input voltage on EN	VIL			0.66	V		5
Continuous output current, OUT	IOUT	0		1.2	A	-40 °C ≤ TJ ≤ 125 °C	5
Continuous output current, OUT	IOUT	0		1.5	A	-40 °C ≤ TJ ≤ 105 °C	5
Current-limit threshold resistor range from ILIM to GND	RILIM	15		232	kΩ	nominal 1%	5
Continuous FAULT sink current	IO	0		10	mA		5
Input de-coupling capacitance, IN to GND		0.1			μF		5
Operating virtual junction temperature	TJ	-40		125	°C	IOUT ≤ 1.2 A	5
Operating virtual junction temperature	TJ	-40		105	°C	IOUT ≤ 1.5 A	5
Voltage range on IN, OUT, EN, ILIM, FAULT		-0.3		7	V		5
Voltage range from IN to OUT		-7		7	V		5
Continuous FAULT sink current		0		25	mA		5
ILIM source current		0		1	mA		5
Maximum junction temperature	TJ	-40		150	°C		5
Storage temperature	Tstg	-65		150	°C		5
Static drain-source on-state resistance, DBV package	rDS(on)		85	95	mΩ	DBV package, TJ = 25°C	7
Static drain-source on-state resistance, DBV package	rDS(on)			135	mΩ	DBV package, -40°C ≤ TJ ≤ 125°C	7
Rise time, output	tr		1.1	1.5	ms	VIN = 6.5 V, CL = 1 μF, RL = 100 Ω	7
Rise time, output	tr		0.7	1	ms	VIN = 2.5 V, CL = 1 μF, RL = 100 Ω	7
Fall time, output	tf		0.2	0.5	ms	VIN = 6.5 V, CL = 1 μF, RL = 100 Ω	7
Enable pin turn on/off threshold		0.66		1.1	V		7
Input current, EN	IEN	-0.5		0.5	μA	VEN = 0 V or 6.5 V	7
Turnon time	ton			3	ms	CL = 1 μF, RL = 100 Ω	7
Turnoff time	toff			3	ms	CL = 1 μF, RL = 100 Ω	7
Current-limit threshold and short-circuit current	IOS	1610	1700	1800	mA	RILIM = 15 kΩ, -40°C ≤ TJ ≤ 105°C	7
Current-limit threshold and short-circuit current	IOS	1215	1295	1375	mA	RILIM = 20 kΩ, TJ = 25°C	7
Current-limit threshold and short-circuit current	IOS	1200	1295	1375	mA	RILIM = 20 kΩ, -40°C ≤ TJ ≤ 125°C	7
Current-limit threshold and short-circuit current	IOS	490	520	550	mA	RILIM = 49.9 kΩ, TJ = 25°C	7
Current-limit threshold and short-circuit current	IOS	475	520	565	mA	RILIM = 49.9 kΩ, -40°C ≤ TJ ≤ 125°C	7
Current-limit threshold and short-circuit current	IOS	110	130	150	mA	RILIM = 210 kΩ	7
Current-limit threshold and short-circuit current	IOS	50	75	100	mA	ILIM shorted to IN	7
Reverse-voltage comparator trip point (VOUT, VIN)		95	135	190	mV		7
Time from reverse-voltage condition to MOSFET turn off		3	5	7	ms	VIN = 5 V	7
Supply current, low-level output	IIN_off	0.1		1	μA	VIN = 6.5 V, No load on OUT, VEN = 0 V	7
Supply current, high-level output	IIN_on	120		150	μA	VIN = 6.5 V, No load on OUT, RILIM = 20 kΩ	7
Supply current, high-level output	IIN_on	100		130	μA	VIN = 6.5 V, No load on OUT, RILIM = 210 kΩ	7
Reverse leakage current	IREV		0.01	1	μA	VOUT = 6.5 V, VIN = 0 V, TJ = 25 °C	7
Low-level input voltage, IN (UVLO rising)	UVLO	2.35		2.45	V	VIN rising	7
Hysteresis, IN			25		mV	TJ = 25 °C	7
Output low voltage, FAULT	VOL			180	mV	I/FAULT = 1 mA	7
Off-state leakage, FAULT				1	μA	V/FAULT = 6.5 V	7
FAULT deglitch, overcurrent		5	7.5	10	ms	FAULT assertion or de-assertion due to overcurrent condition	7
FAULT deglitch, reverse-voltage		2	4	6	ms	FAULT assertion or de-assertion due to reverse-voltage condition	7
Thermal shutdown threshold			155		°C		7
Thermal shutdown threshold in current-limit			135		°C		7
Thermal shutdown hysteresis			10		°C		7
Turnon/response time to short circuit	tIOS		2		μs	VIN = 5 V	7
Junction-to-ambient thermal resistance, DBV	RθJA		182.6		°C/W	DBV 6-pin	6
Junction-to-case (top) thermal resistance, DBV	RθJC(top)		122.2		°C/W	DBV 6-pin	6
Junction-to-board thermal resistance, DBV	RθJB		29.4		°C/W	DBV 6-pin	6
Junction-to-top characterization parameter, DBV	ψJT		20.8		°C/W	DBV 6-pin	6
Junction-to-board characterization parameter, DBV	ψJB		28.9		°C/W	DBV 6-pin	6

CAD (KiCad official)

Symbol: TPS2552DDBVT
Footprint: Package_TO_SOT_SMD:SOT-23-6
3D model: SOT-23-6 (KiCad packages3D, STEP)
3D model files: tps2552ddbvt-etched.step / tps2552ddbvt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps2552ddbvt.step / tps2552ddbvt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (35 pp, sha256 46d2dd4cbec8c2ab, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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TPS2552DDBVT

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