component
TPS2419DR
Public Made by Adomby adom
Texas Instruments Power Distribution Switches, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TPS2419DR
Texas Instruments · Power Distribution Switches · SOIC-8
TPS2419DR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RSET | input | Connect a resistor to ground to program the V(A-C) turn-off threshold; leaving RSET open gives a slightly positive turn-off threshold. |
| 2 | EN | input | Pull EN above 1.3 V to permit normal ORing operation, a low on EN holds GATE low, and EN should not be driven above its 5 V recommended maximum. |
| 3 | RSVD | power_in | Reserved pin that must be connected to GND. |
| 4 | GND | power_in | Device ground, which should have a low-impedance connection to the ground plane because it carries several amperes of discharge current when the external MOSFET turns off. |
| 5 | GATE | output | Drives the gate of the external N-channel MOSFET to emulate a low forward-voltage diode, driven positive with respect to A from BYP and pulled down strongly at turn-off. |
| 6 | C | input | Cathode voltage sense input and bias supply for the gate-drive charge pump; it must be at least 3 V for the MOSFET to be turned on, and the input range is 0 to 16.5 V. |
| 7 | A | input | Anode voltage sense input connected to the MOSFET source, and the reference for the charge-pump supply on BYP; the input range is 0 to 16.5 V. |
| 8 | BYP | bidirectional | Charge-pump output and positive supply for the internal comparators and GATE driver, requiring a capacitor to A (2200 pF ceramic recommended) and never to be shorted to a voltage below A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
TPS2419DR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
tps2419dr-etched.step/tps2419dr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps2419dr.step/tps2419dr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (29 pp, sha256
5d2098bd9b468e95, retrieved 2026-10-08, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPS2419DR
**Texas Instruments** · Power Distribution Switches · SOIC-8
TPS2419DR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RSET | input | Connect a resistor to ground to program the V(A-C) turn-off threshold; leaving RSET open gives a slightly positive turn-off threshold. |
| 2 | EN | input | Pull EN above 1.3 V to permit normal ORing operation, a low on EN holds GATE low, and EN should not be driven above its 5 V recommended maximum. |
| 3 | RSVD | power_in | Reserved pin that must be connected to GND. |
| 4 | GND | power_in | Device ground, which should have a low-impedance connection to the ground plane because it carries several amperes of discharge current when the external MOSFET turns off. |
| 5 | GATE | output | Drives the gate of the external N-channel MOSFET to emulate a low forward-voltage diode, driven positive with respect to A from BYP and pulled down strongly at turn-off. |
| 6 | C | input | Cathode voltage sense input and bias supply for the gate-drive charge pump; it must be at least 3 V for the MOSFET to be turned on, and the input range is 0 to 16.5 V. |
| 7 | A | input | Anode voltage sense input connected to the MOSFET source, and the reference for the charge-pump supply on BYP; the input range is 0 to 16.5 V. |
| 8 | BYP | bidirectional | Charge-pump output and positive supply for the internal comparators and GATE driver, requiring a capacitor to A (2200 pF ceramic recommended) and never to be shorted to a voltage below A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `TPS2419DR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `tps2419dr-etched.step` / `tps2419dr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps2419dr.step` / `tps2419dr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/tps2419.pdf) (29 pp, sha256 `5d2098bd9b468e95`, retrieved 2026-10-08, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tps2419dr-datasheet.pdf)