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TPS2068EDBVR

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Texas Instruments , SOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPS2068EDBVR

Texas Instruments · IC · SOT-23-5

TPS2068EDBVR from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT power_out Power-switch output, connect to load.
2 GND power_in Ground connection.
3 FLT output Active-low open-drain fault output, asserted during overcurrent or overtemperature conditions (sink current 0 to 10 mA).
4 EN input Enable input (active-low on TPS2068E per the device comparison table), with VIH 1.8 V min, VIL 0.8 V max and an input range of 0 to 5.5 V.
5 IN power_in Input voltage and power-switch drain (2.7 V to 5.5 V); connect a 0.1 µF or greater ceramic capacitor from IN to GND close to the IC.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-5
Category
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage VIN -0.3 6 V 5
Output voltage VOUT -0.3 6 V 5
Enable input voltage VEN -0.3 6 V 5
FLT voltage range VFLT -0.3 6 V 5
Junction temperature TJ -40 125 °C 5
Storage temperature Tstg -65 150 °C 5
Input voltage VIN 2.7 5.5 V 5
Input voltage, EN VEN 0 5.5 V 5
High-level input voltage, EN VIH 1.8 V 5
Low-level input voltage, EN VIL 0.8 V 5
Continuous output current IOUT 1.5 A TPS2068E, TPS2069E 5
Junction temperature TJ -40 125 °C 5
Sink current into FLT IFLT 0 10 mA 5
Junction-to-ambient thermal resistance RθJA 184.6 ℃/W DBV (SOT-23) 5 pins 6
Junction-to-case (top) thermal resistance RθJC(top) 92.6 ℃/W DBV (SOT-23) 5 pins 6
Junction-to-board thermal resistance RθJB 59.9 ℃/W DBV (SOT-23) 5 pins 6
Junction-to-top characterization parameter ΨJT 30.7 ℃/W DBV (SOT-23) 5 pins 6
Junction-to-board characterization parameter ΨJB 59.6 ℃/W DBV (SOT-23) 5 pins 6
Static drain-source on-state resistance, 5V or 3.3V operation RDS(ON) 70 105 mΩ VIN = 5 V or 3.3 V, IO = 1.5 A, -40°C ≤ TJ ≤ 125°C 6
Static drain-source on-state resistance, 2.7V operation RDS(ON) 70 110 mΩ VIN = 2.7 V, IO = 1.5 A, -40°C ≤ TJ ≤ 125°C 6
Static drain-source on-state resistance, 5V, 3.3V, or 2.7V operation RDS(ON) 87 mΩ VIN = 5 V, 3.3 V, or 2.7 V, IO = 1.5 A, TJ = 85°C 6
Enable high-level input voltage VIH 1.8 V 2.7 V ≤ VIN ≤ 5.5 V 6
Enable low-level input voltage VIL 0.8 V 2.7 V ≤ VIN ≤ 5.5 V 6
EN pin leakage current IEN -0.5 0.5 uA VEN=5.5V 6
Discharge resistance RDCHG 400 500 810 Ω VIN = VOUT = 5V, disabled 7
Short circuit output current IOS 1.71 2.13 2.55 A VIN = 5 V, OUT connect to GND, device enable into short circuit, TJ = 25°C 7
Short circuit output current IOS 1.6 2.13 2.66 A VIN = 5 V, OUT connect to GND, device enable into short circuit, -40°C ≤ TJ ≤ 125°C 7
Supply current, switch disable ISD 0.5 1 uA No load on OUT, VEN = 0 V, TJ = 25°C 7
Supply current, switch disable ISD 0.5 5 uA No load on OUT, VEN = 0 V, -40°C ≤ TJ ≤ 125°C 7
Supply current, switch enable ISE 93 118 uA No load on OUT, VEN = 5.5 V, TJ = 25°C 7
Leakage current ILKG 1 uA OUT connected to ground, VEN = 0 V, -40°C ≤ TJ ≤ 125°C 7
Undervoltage lockout threshold, IN VUVLO 2 2.6 V VIN rising 7
Output low voltage, overcurrent flag VOL(/OC) 180 mV IO(/OC) = 5 mA 7
Off-state leakage, overcurrent flag IOFF_Leakage 1 uA V/OC = 5.5 V 7
/OC flag deglitch TOC_DEG 6 8 12 ms /OC assertion or de-assertion 7
Thermal shutdown rising threshold TOTSD_R 155 175 195 °C 7
Thermal shutdown rising threshold in current limit TOTSD_CL_R 135 155 175 °C 7
Rise time, output tr 0.6 1.5 ms VIN = 5.5 V, CL = 1 uF, RL = 10 Ω, TJ = 25°C 6
Rise time, output tr 0.4 1 ms VIN = 2.7 V, CL = 1 uF, RL = 10 Ω, TJ = 25°C 6
Fall time, output tf 0.05 0.5 ms VIN = 5.5 V, CL = 1 uF, RL = 10 Ω, TJ = 25°C 6
Turnon time ton 3 ms CL = 100 µF, RL = 10 Ω 7
Turnoff time toff 3 ms CL = 100 µF, RL = 10 Ω 7
Response time to short circuit tios 1.5 us VIN = 5.0 V, RL = 50mΩ. See Figure 7-5. 7
Hysteresis, IN 75 mV TJ = 25°C 7
Thermal shutdown hysteresis 10 °C 7
Reverse leakage current IREV 0 uA VOUT = 5.5 V, IN = ground, TJ = 25°C 7

CAD (KiCad official)

  • Symbol: TPS2068EDBVR
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: tps2068edbvr-etched.step / tps2068edbvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps2068edbvr.step / tps2068edbvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (34 pp, sha256 96e797daf8040b4a, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF