component
TPS2022DRQ1
Public Made by Adomby adom
Texas Instruments Power Distribution Switches, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPS2022DRQ1
Texas Instruments · Power Distribution Switches · SOIC-8
TPS2022DRQ1 from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground connection for the device. |
| 2 | IN | power_in | Input voltage to the power switch, specified over an operating range of 2.7 V to 5.5 V. |
| 3 | IN | power_in | Input voltage to the power switch, specified over an operating range of 2.7 V to 5.5 V. |
| 4 | EN | input | Enable input; logic-low turns on the power switch, and it is compatible with TTL and CMOS logic levels. |
| 5 | OC | output | Overcurrent logic output, open drain and active-low, asserted on an overcurrent or overtemperature condition. |
| 6 | OUT | power_out | Power-switch output of the 50-mΩ N-channel high-side MOSFET. |
| 7 | OUT | power_out | Power-switch output of the 50-mΩ N-channel high-side MOSFET. |
| 8 | OUT | power_out | Power-switch output of the 50-mΩ N-channel high-side MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range (VI(IN)) | VI(IN) | 2.7 | 5.5 | V | 4 | ||
| Enable input voltage range (VI(EN)) | VI(EN) | 0 | 5.5 | V | 4 | ||
| Continuous output current TPS2022 | IO | 0 | 1 | A | TPS2022 | 4 | |
| Operating virtual junction temperature range | TJ | -40 | 125 | °C | 4 | ||
| Input voltage range absolute maximum | VI(IN) | -0.3 | 6 | V | 4 | ||
| Output voltage range | VO(OUT) | -0.3 | V | max VI(IN) + 0.3 V | 4 | ||
| Input voltage range enable absolute maximum | VI(EN) | -0.3 | 6 | V | 4 | ||
| Operating virtual junction temperature range absolute maximum | TJ | -40 | 125 | °C | 4 | ||
| Storage temperature range | Tstg | -65 | 150 | °C | 4 | ||
| ESD human body model | 2 | kV | Human body model | 4 | |||
| ESD machine model | 200 | V | Machine model | 4 | |||
| ESD charged device model | 750 | V | Charged device model (CDM) | 4 | |||
| Continuous total power dissipation rating D package | 725 | mW | TA ≤ 25°C, D package | 4 | |||
| Power rating at TA = 70°C | 464 | mW | TA = 70°C, D package | 4 | |||
| Power rating at TA = 85°C | 377 | mW | TA = 85°C, D package | 4 | |||
| Static drain-source on-state resistance | rDS(on) | 33 | 43.5 | mΩ | VI(IN) = 5 V, IO = 1.8 A, 25°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 38 | 57.5 | mΩ | VI(IN) = 5 V, IO = 1.8 A, 85°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 44 | 62.5 | mΩ | VI(IN) = 5 V, IO = 1.8 A, 125°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 37 | 48.5 | mΩ | VI(IN) = 3.3 V, IO = 1.8 A, 25°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 43 | 68.5 | mΩ | VI(IN) = 3.3 V, IO = 1.8 A, 85°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 51 | 87 | mΩ | VI(IN) = 3.3 V, IO = 1.8 A, 125°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 30 | 43.5 | mΩ | VI(IN) = 5 V, IO = 1 A, 25°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 43 | 62.5 | mΩ | VI(IN) = 5 V, IO = 1 A, 125°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 31 | 48.5 | mΩ | VI(IN) = 3.3 V, IO = 1 A, 25°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 48 | 87 | mΩ | VI(IN) = 3.3 V, IO = 1 A, 125°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 30 | 34 | mΩ | VI(IN) = 5 V, IO = 0.18 A, 25°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 35 | 41 | mΩ | VI(IN) = 5 V, IO = 0.18 A, 85°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 39 | 47 | mΩ | VI(IN) = 5 V, IO = 0.18 A, 125°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 33 | 37 | mΩ | VI(IN) = 3.3 V, IO = 0.18 A, 25°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 39 | 46 | mΩ | VI(IN) = 3.3 V, IO = 0.18 A, 85°C | 5 | |
| Static drain-source on-state resistance | rDS(on) | 44 | 56 | mΩ | VI(IN) = 3.3 V, IO = 0.18 A, 125°C | 5 | |
| High-level input voltage | VIH | 2 | V | 2.7 V ≤ VI(IN) ≤ 5.5 V, Full range | 5 | ||
| Low-level input voltage | VIL | 0.8 | V | 4.5 V ≤ VI(IN) ≤ 5.5 V, Full range | 5 | ||
| Low-level input voltage | VIL | 0.5 | V | 2.7 V ≤ VI(IN) ≤ 4.5 V, Full range | 5 | ||
| Input current | II | -0.5 | 0.5 | mA | EN = 0 V or EN = VI(IN), Full range | 5 | |
| Turnon time | ton | 20 | ms | CL = 100 mF, RL = 10 Ω, Full range | 5 | ||
| Turnoff time | toff | 40 | ms | CL = 100 mF, RL = 10 Ω, Full range | 5 | ||
| Short-circuit output current TPS2022 | IOS | 1.1 | 1.5 | 1.8 | A | VI = 5.5 V, OUT connected to GND, device enabled into short circuit, 25°C | 5 |
| Supply current low-level output | 0.3 | 1 | mA | No load on OUT, EN = VI(IN), 25°C | 6 | ||
| Supply current low-level output | 10 | mA | No load on OUT, EN = VI(IN), Full range | 6 | |||
| Supply current high-level output | 58 | 75 | mA | No load on OUT, EN = 0 V, 25°C | 6 | ||
| Supply current high-level output | 75 | 100 | mA | No load on OUT, EN = 0 V, Full range | 6 | ||
| Leakage current | 10 | mA | OUT connected to ground, EN = VI(IN), Full range | 6 | |||
| Undervoltage lockout low-level input voltage | 2 | 2.5 | V | Full range | 6 | ||
| Overcurrent output low voltage | VOL(OC) | 0.4 | V | IO = 10 mA, Full range | 6 | ||
| Overcurrent off-state current | 1 | mA | VO = 5 V, VO = 3.3 V, Full range | 6 | |||
| Rise time output | tr | 6.1 | ms | VI(IN) = 5.5 V, CL = 1 mF, RL = 10 Ω, 25°C | 5 | ||
| Rise time output | tr | 8.6 | ms | VI(IN) = 2.7 V, CL = 1 mF, RL = 10 Ω, 25°C | 5 | ||
| Fall time output | tf | 3.4 | ms | VI(IN) = 5.5 V, CL = 1 mF, RL = 10 Ω, 25°C | 5 | ||
| Fall time output | tf | 3 | ms | VI(IN) = 2.7 V, CL = 1 mF, RL = 10 Ω, 25°C | 5 | ||
| Undervoltage lockout hysteresis | 100 | mV | 25°C | 6 | |||
| Thermal resistance junction to ambient SOIC | RθJA | 172 | °C/W | SOIC package | 19 | ||
| Power dissipation derating factor above TA = 25°C | 5.8 | mW/°C | D package, above TA = 25°C | 4 |
CAD (KiCad official)
- Symbol:
TPS2022DRQ1 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
tps2022drq1-etched.step/tps2022drq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps2022drq1.step/tps2022drq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (28 pp, sha256
96c12f53a3191566, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).