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TPS1HTC100QPWPRQ1

TI(德州仪器) · Power Distribution Switches · HTSSOP-14

TPS1HTC100QPWPRQ1 from TI(德州仪器), in a HTSSOP-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Power ground of the device; connect to a resistor-diode ground network to have reverse battery protection.
2 EN input Input control for channel activation with internal pulldown; enable voltage is limited to -1 V to 5.5 V.
3 DIAG_EN input Enable-disable pin for diagnostics with internal pulldown; diagnostic enable voltage is limited to -1 V to 5.5 V.
4 FAULT output Open-drain global fault output (referred to as FLT or fault pin); FAULT pin voltage is limited to -1 V to 5.5 V.
5 LATCH input Selects thermal shutdown behavior, latch-off or auto-retry, with internal pulldown; LATCH pin voltage is limited to -1 V to 5.5 V.
6 SNS output Outputs the sense value corresponding to the sense ratio; sense voltage is limited to -1 V to 5.5 V.
7 ILIM output Adjustable current limit pin; short to ground or leave floating if an external current limit is not used (floating is a fault state, default internal threshold applies).
8 VOUT power_out Power output of the high-side switch, connected to the load; VOUT is rated -60 V to 70 V with respect to IC GND.
9 VOUT power_out Power output of the high-side switch, connected to the load; VOUT is rated -60 V to 70 V with respect to IC GND.
10 VOUT power_out Power output of the high-side switch, connected to the load; VOUT is rated -60 V to 70 V with respect to IC GND.
11 NC unconnected No internal connection.
12 VS power_in Power supply; nominal operating supply is 6 V to 60 V, with continuous supply voltage absolute maximum of -0.7 V to 70 V.
13 VS power_in Power supply; nominal operating supply is 6 V to 60 V, with continuous supply voltage absolute maximum of -0.7 V to 70 V.
14 VS power_in Power supply; nominal operating supply is 6 V to 60 V, with continuous supply voltage absolute maximum of -0.7 V to 70 V.
15 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer TI(德州仪器)
Package HTSSOP-14
Category Power Management (PMIC)
Pins 15

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous supply voltage, VS with respect to IC GND VS -0.7 70 V 4
Continuous output voltage, VOUT with respect to IC GND VOUT -60 70 V 4
Maximum transient voltage at supply pin, VS with respect to IC GND -0.7 81 V < 100 us 4
Enable pin voltage VEN -1 7 V 4
LATCH pin voltage VLATCH -1 7 V 4
DIAG_EN pin voltage VDIAG_EN -1 7 V 4
Sense pin voltage VSNS -1 7 V 4
FAULT pin voltage VFAULT -1 7 V 4
Reverse ground current IGND -50 mA VS < 0 V 4
Maximum junction temperature TJ 150 °C 4
Storage temperature Tstg -65 150 °C 4
Nominal supply voltage VS_OP_NOM 6 60 V 4
Enable voltage VEN -1 5.5 V 4
LATCH pin voltage VLATCH -1 5.5 V 4
Diagnostic enable voltage VDIAG_EN -1 5.5 V 4
FAULT pin voltage VFAULT -1 5.5 V 4
Sense voltage VSNS -1 5.5 V 4
Operating free-air temperature TA -40 125 °C 4
Continuous load current ILNOM 4 A VEN = 0V, TAMB = 85°C 5
VS quiescent current IQ, VS 0.98 1.3 mA VEN = 5V, IOUT = 0A, VDIAG_EN = 0V 5
VS quiescent current IQ, VS 1.2 1.65 mA VEN = 5V, IOUT = 0A, VDIAG_EN = 5V 5
Total device standby current (including MOSFET) ISTBY, VS 0.25 0.7 µA VEN = VDIAG_EN = 0V, VOUT = 0V, TJ = -40°C to 85°C 5
Total device standby current (including MOSFET) ISTBY, VS 0.83 11 µA VEN = VDIAG_EN = 0V, VOUT = 0V, TJ = 150°C 5
Output leakage current IOUT(STBY) 0.65 µA VEN = 0V, VOUT = 0V, VDIAG = 0V, TJ = -40°C to 85°C 5
Output leakage current IOUT(STBY) 0.28 10 µA VEN = 0V, VOUT = 0V, VDIAG = 0V, TJ = 150°C 5
VS undervoltage lockout rising VS,UVLOR 5 5.4 5.75 V Measured with respect to the GND pin of the device 5
VS undervoltage lockout falling VS,UVLOF 4.1 4.5 4.85 V Measured with respect to the GND pin of the device 5
VDS clamp voltage VDS,Clamp 70 78.9 84.5 V FET current = 10mA, VS = 24V 5
VDS clamp voltage VDS,Clamp 48 53 58 V FET current = 10mA, VS = 6V 5
On-resistance RON 180 mΩ 0.5A ≤ IOUT ≤ 3A, TJ = 150°C 5
On-resistance during reverse polarity RON(REV) 180 mΩ 0.5A ≤ IOUT ≤ 3A, VS = -24V, TJ = -40°C to 150°C 5
Current limit level ICL 0.73 0.92 1.11 A Short circuit condition, VDS = 1V, RILIM = 50kΩ 6
Current limit level ICL 1.5 1.96 2.3 A Short circuit condition, VDS = 1V, RILIM = 25kΩ 6
Current limit level ICL 2.3 3 3.5 A Short circuit condition, VDS = 1V, RILIM = 16.7kΩ 6
Current limit level ICL 4 5.3 6.3 A Short circuit condition, VDS = 1V, RILIM = 10kΩ 6
Current limit level ICL 3.05 3.5 4.3 A Short circuit condition, VDS = 1V, RILIM = Open or Out of range 6
Current limit level ICL 6.1 7.3 8.6 A Short circuit condition, VDS = 1V, RILIM = GND 6
FAULT low output voltage VFAULT 0.5 V IFAULT = 2.5mA 6
VSNS fault high-level VSNSFH 4.5 5 5.77 V VDIAG_EN = 5V 7
VSNS fault high-level VSNSFH 3.3 3.95 4.4 V VDIAG_EN = 3.3V, RSNS = Open 7
ISNS fault high-level ISNSFLT 5.2 6.4 mA VDIAG_EN > VIH,DIAG_EN 7
OFF state open-load (OL) detection voltage VOL_OFF 1.4 2 2.6 V VEN = 0V, VDIAG_EN = 5V 7
Input voltage low-level (DIAG_EN) VIL, DIAG_EN 0.8 V No GND Network 7
Input voltage high-level (DIAG_EN) VIH, DIAG_EN 1.5 V No GND Network 8
Input voltage low-level (EN) VIL, EN 0.8 V No GND Network 8
Input voltage high-level (EN) VIH, EN 1.5 V No GND Network 8
Current sense accuracy (ISNS ratio error) ISNS -5 6 % VEN = VDIAG_EN = 5V, IOUT = 4A 7
Current sense accuracy (ISNS ratio error) ISNS -5 5 % VEN = VDIAG_EN = 5V, IOUT = 1A 7
Current sense accuracy (ISNS ratio error) ISNS -30 30 % VEN = VDIAG_EN = 5V, IOUT = 10mA 7
Turn-off delay time tDF 20 65 98 µs 50% of EN to 80% of VOUT 9
VOUT rising slew rate SRR 0.1 0.47 0.7 V/µs 20% to 80% of VOUT 9
Minimum VOUT OFF pulse width tOFF_pw 82 130 175 µs 200µs OFF time switch enable pulse, VOUT @20% of VS, F = fmax 9
On-resistance RON 83 mΩ 0.5A ≤ IOUT ≤ 3A, TJ = 25°C 5
Thermal shutdown TABS 165 °C 6
Junction-to-ambient thermal resistance RθJA 33.7 °C/W 5
Junction-to-case (top) thermal resistance RθJC(top) 34.9 °C/W 5
Junction-to-board thermal resistance RθJB 10.2 °C/W 5
Junction-to-top characterization parameter ψJT 1.1 °C/W 5
Junction-to-board characterization parameter ψJB 10.2 °C/W 5
Junction-to-case (bottom) thermal resistance RθJC(bot) 2.7 °C/W 5

CAD (KiCad official)

  • Symbol: TPS1HTC100QPWPRQ1
  • Footprint: Package_SO:TSSOP-14-1EP_4.4x5mm_P0.65mm
  • 3D model: HTSSOP-14 (KiCad packages3D, STEP)
  • 3D model files: tps1htc100qpwprq1-etched.step / tps1htc100qpwprq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps1htc100qpwprq1.step / tps1htc100qpwprq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TI(德州仪器) datasheet (43 pp, sha256 757132f4d2bfc637, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF