component
TPS1120-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TPS1120-HXY
HXY MOSFET · MOSFETs · SOP-8
TPS1120-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET (channel 1), with Drain-Source Voltage rated -20 V. |
| 2 | G1 | input | Gate terminal of the first P-channel MOSFET, with Gate-Source Voltage rated ±12 V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET (channel 2), with Drain-Source Voltage rated -20 V. |
| 4 | G2 | input | Gate terminal of the second P-channel MOSFET (channel 2), with Gate-Source Voltage rated ±12 V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET (channel 2), rated for Drain Current-Continuous -4 A. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET (channel 2), rated for Drain Current-Continuous -4 A. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET (channel 1), rated for Drain Current-Continuous -4 A. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET (channel 1), rated for Drain Current-Continuous -4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V , ID=-250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.6 | -1.1 | -1.7 | V | 2 | |
| Drain-Source Leakage Current at TJ=25℃ | IDSS | -1 | uA | VDS=-16V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current at TJ=55℃ | IDSS | -5 | uA | VDS=-16V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=±20V , VDS=0V | 2 | ||
| Gate Resistance | Rg | 24 | 48 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | |
| Total Gate Charge | Qg | 10.6 | 15 | nC | (-4.5V) | 2 | |
| Turn-On Delay Time | Td(on) | 10 | 12 | ns | VDD=-15V , VGS=-10V , RG=6Ω | 2 | |
| Rise Time | Tr | 4.9 | 6 | ns | VDD=-15V , VGS=-10V , RG=6Ω | 2 | |
| Turn-Off Delay Time | Td(off) | 22 | 42 | ns | VDD=-15V , VGS=-10V , RG=6Ω | 2 | |
| Fall Time | Tf | 3 | 9 | ns | VDD=-15V , VGS=-10V , RG=6Ω; ID=-1A, RG=10Ω | 2 | |
| Continuous Source Current | IS | -2 | A | 2 | |||
| Pulsed Source Current | ISM | -20 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V , IS=-1.7A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | -4 | A | 1 | |||
| Drain Current-Pulsed | IDM | -20 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | Note 2 | 1 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.02 | V/℃ | Reference to 25℃ , ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.32 | mV/℃ | VGS=VDS , ID =-250uA | 2 | ||
| Static Drain-Source On-Resistance at VGS=-4.5V | RDS(ON) | 85 | mΩ | VGS=-4.5V , ID=-5.8A | 2 | ||
| Forward Transconductance | gfs | 5.5 | S | VDS=-5V , ID=-3A | 2 | ||
| Gate-Drain Charge | Qgd | 2 | nC | 2 | |||
| Gate-Source Charge | Qgs | 1 | nC | 2 | |||
| Input Capacitance | Ciss | 325 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 60 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
TPS1120-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
tps1120-hxy-etched.step/tps1120-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps1120-hxy.step/tps1120-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
f3014095163b8ce3, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPS1120-HXY
**HXY MOSFET** · MOSFETs · SOP-8
TPS1120-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET (channel 1), with Drain-Source Voltage rated -20 V. |
| 2 | G1 | input | Gate terminal of the first P-channel MOSFET, with Gate-Source Voltage rated ±12 V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET (channel 2), with Drain-Source Voltage rated -20 V. |
| 4 | G2 | input | Gate terminal of the second P-channel MOSFET (channel 2), with Gate-Source Voltage rated ±12 V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET (channel 2), rated for Drain Current-Continuous -4 A. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET (channel 2), rated for Drain Current-Continuous -4 A. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET (channel 1), rated for Drain Current-Continuous -4 A. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET (channel 1), rated for Drain Current-Continuous -4 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V , ID=-250uA | 2 |
| Gate Threshold Voltage | VGS(th) | -0.6 | -1.1 | -1.7 | V | | 2 |
| Drain-Source Leakage Current at TJ=25℃ | IDSS | | | -1 | uA | VDS=-16V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current at TJ=55℃ | IDSS | | | -5 | uA | VDS=-16V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Gate Resistance | Rg | | 24 | 48 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 |
| Total Gate Charge | Qg | | 10.6 | 15 | nC | (-4.5V) | 2 |
| Turn-On Delay Time | Td(on) | | 10 | 12 | ns | VDD=-15V , VGS=-10V , RG=6Ω | 2 |
| Rise Time | Tr | | 4.9 | 6 | ns | VDD=-15V , VGS=-10V , RG=6Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 22 | 42 | ns | VDD=-15V , VGS=-10V , RG=6Ω | 2 |
| Fall Time | Tf | | 3 | 9 | ns | VDD=-15V , VGS=-10V , RG=6Ω; ID=-1A, RG=10Ω | 2 |
| Continuous Source Current | IS | | | -2 | A | | 2 |
| Pulsed Source Current | ISM | | | -20 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V , IS=-1.7A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | -20 | | | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Drain Current-Continuous | ID | -4 | | | A | | 1 |
| Drain Current-Pulsed | IDM | -20 | | | A | Note 1 | 1 |
| Maximum Power Dissipation | PD | | | 2 | W | | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62.5 | ℃/W | Note 2 | 1 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | -0.02 | | V/℃ | Reference to 25℃ , ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 4.32 | | mV/℃ | VGS=VDS , ID =-250uA | 2 |
| Static Drain-Source On-Resistance at VGS=-4.5V | RDS(ON) | | 85 | | mΩ | VGS=-4.5V , ID=-5.8A | 2 |
| Forward Transconductance | gfs | | 5.5 | | S | VDS=-5V , ID=-3A | 2 |
| Gate-Drain Charge | Qgd | | 2 | | nC | | 2 |
| Gate-Source Charge | Qgs | | 1 | | nC | | 2 |
| Input Capacitance | Ciss | | 325 | | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss | | 60 | | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 30 | | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `TPS1120-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `tps1120-hxy-etched.step` / `tps1120-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps1120-hxy.step` / `tps1120-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/tps1120-hxy-datasheet.pdf) (6 pp, sha256 `f3014095163b8ce3`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tps1120-hxy-datasheet.pdf)