component
TPM60V3NS3
Public Made by Adomby adom
TECH PUBLIC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPM60V3NS3
TECH PUBLIC · MOSFETs · SOT-23
TPM60V3NS3 from TECH PUBLIC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±20 V and threshold of 0.5 V min to 2 V max at ID=250 µA. |
| 2 | S | passive | Source; connects to the body diode anode, with continuous drain current rated 3 A. |
| 3 | D | passive | Drain; rated 60 V drain-source voltage, 3 A continuous and 10 A pulsed drain current, with RDS(on) of 105 mΩ max at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TECH PUBLIC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | 3 | A | TA=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | note 1 | 1 | ||
| Power Dissipation | PD | 0.35 | W | TA=25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | note 2 | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =60V,VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS =±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.5 | 2 | V | VDS =VGS, ID =250µA | 2 | |
| Drain-source on-resistance | RDS(on) | 105 | mΩ | VGS =10V, ID =3A | 2 | ||
| Drain-source on-resistance | RDS(on) | 125 | mΩ | VGS =4.5V, ID =3A | 2 |
CAD (KiCad official)
- Symbol:
TPM60V3NS3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tpm60v3ns3-etched.step/tpm60v3ns3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpm60v3ns3.step/tpm60v3ns3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TECH PUBLIC datasheet (6 pp, sha256
41acc5d94067f9a9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).