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TPM4105EC6

TECH PUBLIC · MOSFETs · SOT-363

TPM4105EC6 from TECH PUBLIC, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET Q1 (pin 1 marked by dot in top view); Q1 is rated VDS 20 V, ID 0.8 A.
2 G1 passive Gate of N-channel MOSFET Q1, ESD protected, with VGS rated ±12 V.
3 D2 passive Drain of P-channel MOSFET Q2, rated VDS -20 V and ID -0.8 A (pulsed -1.3 A).
4 S2 passive Source of P-channel MOSFET Q2, with VGS rated ±12 V.
5 G2 passive Gate of P-channel MOSFET Q2, ESD protected, with VGS rated ±12 V and threshold -0.45 V min to -1.3 V max.
6 D1 passive Drain of N-channel MOSFET Q1, rated VDS 20 V and ID 0.8 A (pulsed 1.3 A).

Key specifications

Parameter Value
Manufacturer TECH PUBLIC
Package SOT-363
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: TPM4105EC6
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: tpm4105ec6-etched.step / tpm4105ec6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpm4105ec6.step / tpm4105ec6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TECH PUBLIC datasheet (4 pp, sha256 2b42f718dd72592d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF