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TPM3030PK3-1

TECH PUBLIC · MOSFETs · TO-252

TPM3030PK3-1 from TECH PUBLIC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel enhancement MOSFET; VGS rated ±20 V with threshold of -1 to -3 V at ID = -250 µA.
2 D passive Drain of the P-channel MOSFET; VDS rated -30 V and continuous drain current -30 A at TC = 25 °C.
3 S passive Source of the P-channel MOSFET; body diode forward current IS is -30 A max.

Key specifications

Parameter Value
Manufacturer TECH PUBLIC
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: TPM3030PK3-1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: tpm3030pk3-1-etched.step / tpm3030pk3-1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpm3030pk3-1.step / tpm3030pk3-1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TECH PUBLIC datasheet (5 pp, sha256 ce7adde0526c3c8b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF