component
TPM2102BC3
Public Made by Adomby adom
TECH PUBLIC MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TPM2102BC3
TECH PUBLIC · MOSFETs · SOT-323
TPM2102BC3 from TECH PUBLIC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage limit of VGS ±10 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit beyond the device ratings of VDS 20 V and ID 2.5 A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 20 V and a continuous drain current of 2.5 A at TA=25°C (steady state). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TECH PUBLIC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 20 | V | 1 | |||
| Gate-source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current | ID | 2.5 | A | TA=25℃ @ Steady State | 1 | ||
| Drain Current | ID | 2 | A | TA=70℃ @ Steady State | 1 | ||
| Pulsed Drain Current | IDM | 14 | A | 1 | |||
| Total Power Dissipation | PD | 0.7 | W | TA=25℃ | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient @ Steady State | RθJA | 178 | ℃/ W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V,TC=25℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.55 | 0.78 | 1.1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 57 | 70 | mΩ | VGS= 4.5V, ID=2.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 72 | 98 | mΩ | VGS= 2.5V, ID=2.0A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=2.5A,VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | 2 | |||
| Input Capacitance | Ciss | 280 | pF | VDS=10V,VGS=0V,f=1MHZ | 2 | ||
| Output Capacitance | Coss | 46 | pF | VDS=10V,VGS=0V,f=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 29 | pF | VDS=10V,VGS=0V,f=1MHZ | 2 | ||
| Total Gate Charge | Qg | 2.9 | nC | VGS=4.5V,VDS=10V,ID=2.5A | 2 | ||
| Gate Source Charge | Qgs | 0.4 | nC | VGS=4.5V,VDS=10V,ID=2.5A | 2 | ||
| Gate Drain Charge | Qgd | 0.6 | nC | VGS=4.5V,VDS=10V,ID=2.5A | 2 | ||
| Turn-on Delay Time | tD(on) | 13 | ns | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 54 | ns | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-off Delay Time | tD(off) | 18 | ns | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-off Fall Time | tf | 11 | ns | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 2 |
CAD (KiCad official)
- Symbol:
TPM2102BC3 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
tpm2102bc3-etched.step/tpm2102bc3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpm2102bc3.step/tpm2102bc3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TECH PUBLIC datasheet (3 pp, sha256
865838a7393462ec, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPM2102BC3
**TECH PUBLIC** · MOSFETs · SOT-323
TPM2102BC3 from TECH PUBLIC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage limit of VGS ±10 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit beyond the device ratings of VDS 20 V and ID 2.5 A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 20 V and a continuous drain current of 2.5 A at TA=25°C (steady state). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TECH PUBLIC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | 20 | V | | 1 |
| Gate-source Voltage | VGS | -10 | | 10 | V | | 1 |
| Drain Current | ID | | | 2.5 | A | TA=25℃ @ Steady State | 1 |
| Drain Current | ID | | | 2 | A | TA=70℃ @ Steady State | 1 |
| Pulsed Drain Current | IDM | | | 14 | A | | 1 |
| Total Power Dissipation | PD | | | 0.7 | W | TA=25℃ | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-to-Ambient @ Steady State | RθJA | | | 178 | ℃/ W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS= 0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=20V,VGS=0V,TC=25℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.55 | 0.78 | 1.1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 57 | 70 | mΩ | VGS= 4.5V, ID=2.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 72 | 98 | mΩ | VGS= 2.5V, ID=2.0A | 2 |
| Diode Forward Voltage | VSD | | 1.2 | | V | IS=2.5A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 2.5 | A | | 2 |
| Input Capacitance | Ciss | | 280 | | pF | VDS=10V,VGS=0V,f=1MHZ | 2 |
| Output Capacitance | Coss | | 46 | | pF | VDS=10V,VGS=0V,f=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 29 | | pF | VDS=10V,VGS=0V,f=1MHZ | 2 |
| Total Gate Charge | Qg | | 2.9 | | nC | VGS=4.5V,VDS=10V,ID=2.5A | 2 |
| Gate Source Charge | Qgs | | 0.4 | | nC | VGS=4.5V,VDS=10V,ID=2.5A | 2 |
| Gate Drain Charge | Qgd | | 0.6 | | nC | VGS=4.5V,VDS=10V,ID=2.5A | 2 |
| Turn-on Delay Time | tD(on) | | 13 | | ns | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-on Rise Time | tr | | 54 | | ns | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-off Delay Time | tD(off) | | 18 | | ns | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-off Fall Time | tf | | 11 | | ns | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 2 |
## CAD (KiCad official)
- Symbol: `TPM2102BC3`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `tpm2102bc3-etched.step` / `tpm2102bc3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tpm2102bc3.step` / `tpm2102bc3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TECH PUBLIC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588907287335612416) (3 pp, sha256 `865838a7393462ec`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tpm2102bc3-datasheet.pdf)