# TPM2101BC3

**TECH PUBLIC** · MOSFETs · SOT-323

TPM2101BC3 from TECH PUBLIC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-source voltage VGS of ±10 V per the absolute maximum ratings. |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode has a maximum continuous current IS of -2.0 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V and a drain current ID of -2.0 A at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TECH PUBLIC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | -20 | V |  | 1 |
| Gate-source voltage | VGS | -10 |  | 10 | V |  | 1 |
| Drain current, steady state | ID |  |  | -2 | A | TA=25℃ @ Steady State | 1 |
| Drain current, steady state | ID |  |  | -1.6 | A | TA=70℃ @ Steady State | 1 |
| Pulsed drain current | IDM |  |  | -8 | A |  | 1 |
| Total power dissipation | PD |  |  | 0.45 | W | TA=25℃ | 1 |
| Junction and storage temperature range | TJ ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction-to-ambient | RθJA |  |  | 278 | ℃/W |  | 1 |
| Drain-source breakdown voltage | BVDSS | -20 |  |  | V | VGS= 0V, ID=-250μA | 2 |
| Zero gate voltage drain current | IDSS |  |  | -1 | μA | VDS=-20V,VGS=0V,TC=25℃ | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VGS= ±10V, VDS=0V | 2 |
| Gate threshold voltage | VGS(th) | -0.4 | -0.62 | -1 | V | VDS= VGS, ID=-250μA | 2 |
| Static drain-source on-resistance | RDS(ON) |  | 100 | 130 | mΩ | VGS= -4.5V, ID=-1.5A | 2 |
| Static drain-source on-resistance | RDS(ON) |  | 130 | 170 | mΩ | VGS= -2.5V, ID=-1.2A | 2 |
| Static drain-source on-resistance | RDS(ON) |  | 165 | 250 | mΩ | VGS= -1.8V, ID=-1.0A | 2 |
| Diode forward voltage | VSD |  | -0.8 | -1.2 | V | IS=-2.0A,VGS=0V | 2 |
| Maximum body-diode continuous current | IS |  |  | -2 | A |  | 2 |
| Input capacitance | Ciss |  | 290 |  | pF | VDS=-10V,VGS=0V,f=1MHZ | 2 |
| Output capacitance | Coss |  | 47 |  | pF |  | 2 |
| Reverse transfer capacitance | Crss |  | 29 |  | pF |  | 2 |
| Total gate charge | Qg |  | 3.9 |  | nC | VGS=-4.5V,VDS=-10V,ID=-1.0A | 2 |
| Gate-source charge | Qgs |  | 0.7 |  | nC |  | 2 |
| Gate-drain charge | Qgd |  | 0.9 |  | nC |  | 2 |
| Turn-on delay time | tD(on) |  | 12 |  | ns | VGS=-4.5V,VDD=-10V, ID=-1A, RGEN=2.5Ω | 2 |
| Turn-on rise time | tr |  | 54 |  | ns |  | 2 |
| Turn-off delay time | tD(off) |  | 15 |  | ns |  | 2 |
| Turn-off fall time | tf |  | 9 |  | ns |  | 2 |

## CAD (KiCad official)

- Symbol: `TPM2101BC3`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `tpm2101bc3-etched.step` / `tpm2101bc3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tpm2101bc3.step` / `tpm2101bc3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TECH PUBLIC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588907287209918464) (3 pp, sha256 `4647fb13385b5547`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tpm2101bc3-datasheet.pdf)