# TPM10050NK3

**TECH PUBLIC** · MOSFETs · TO-252

TPM10050NK3 from TECH PUBLIC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V maximum and a typical threshold of 1.5 V at 250 µA. |
| 2 | D | passive | Drain, also connected to the tab; VDS is rated 100 V and continuous drain current is 50 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current through the body diode is 50 A maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TECH PUBLIC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 50 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 30 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 200 | A |  | 1 |
| Total Power Dissipation | PDTOT |  |  | 100 | W | TC=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case PCB Mount | RθJC |  |  | 2 | °C/W | PCB mount, see Note 1 (1" square PCB, FR4) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V, ID=250µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS= 80V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 50 | μA | VDS= 80V, TJ=125°C | 2 |
| Forward Voltage | VSD |  | 0.8 | 1.3 | V | VGS = 0V, I S = 20A | 2 |
| Continuous Source Current | IS |  |  | 50 | A | Integral reverse diode in the MOSFET | 2 |
| Pulsed Current | ISM |  |  | 200 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `TPM10050NK3`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `tpm10050nk3-etched.step` / `tpm10050nk3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tpm10050nk3.step` / `tpm10050nk3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TECH PUBLIC datasheet](docs/tpm10050nk3-datasheet.pdf) (5 pp, sha256 `fe8e2a433bb2ff8b`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tpm10050nk3-datasheet.pdf)