component
TPM05K20WX
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Shenzhen JingYang MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TPM05K20WX
Shenzhen JingYang · MOSFETs · SOT-323
TPM05K20WX from Shenzhen JingYang, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; the datasheet rates gate-source voltage at a typical ±8 V. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET, the reference for VGS and the return path for ID; the part is rated VDS -20 V. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET; continuous drain current is rated -0.66 A and pulsed drain current -1.2 A (tp=10 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS = 0V, ID = -250μA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -16V, VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -10 | 10 | μA | VGS = ±8V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -0.4 | -0.7 | 0 | V | VDS = VGS, ID = -250μA | 2 |
| Drain-source on-resistance | RDS(on) | 465 | 560 | mΩ | VGS = -4.5V, ID = -0.5A | 2 | |
| Drain-source on-resistance | RDS(on) | 600 | 780 | mΩ | VGS = -2.5V, ID = -0.5A | 2 | |
| Input capacitance | Ciss | 113 | 170 | pF | 2 | ||
| Output capacitance | Coss | 15 | 25 | pF | 2 | ||
| Reverse transfer capacitance | Crss | 9 | 15 | pF | VDS = -16V, VGS = 0V, f = 1MHz | 2 | |
| Diode forward voltage | VSD | -1.1 | V | IS = -0.5A, VGS = 0V | 2 | ||
| Drain-source voltage | VDS | -20 | V | 1 | |||
| Gate-source voltage (typical) | VGS | -8 | 8 | V | 1 | ||
| Continuous drain current | ID | -0.66 | A | Surface mounted on FR4 board, minimum pad size (note 1) | 1 | ||
| Pulsed drain current | IDM | -1.2 | A | tp=10s (pulse width as printed) | 1 | ||
| Power dissipation | PD | 150 | mW | note 1 | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Storage temperature | TSTG | -55 | 150 | °C | 1 | ||
| Lead temperature for soldering | TL | 260 | °C | 1/8 inch from case for 10 s | 1 | ||
| Thermal resistance junction to ambient | RθJA | 833 | /W | note 1 | 1 | ||
| Forward transconductance | gFS | 1.2 | S | VDS = -10V, ID = -0.54A | 2 | ||
| Turn-on delay time | td(on) | 9 | ns | 2 | |||
| Turn-on rise time | tr | 5.8 | ns | 2 | |||
| Turn-off delay time | td(off) | 32.7 | ns | 2 | |||
| Turn-off fall time | tf | 20.3 | ns | VGS = -4.5V, VDS = -10V, ID = -200mA, RGEN = 10Ω | 2 |
CAD (KiCad official)
- Symbol:
TPM05K20WX - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
tpm05k20wx-etched.step/tpm05k20wx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpm05k20wx.step/tpm05k20wx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (4 pp, sha256
46ce0f29968475ec, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPM05K20WX
**Shenzhen JingYang** · MOSFETs · SOT-323
TPM05K20WX from Shenzhen JingYang, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; the datasheet rates gate-source voltage at a typical ±8 V. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET, the reference for VGS and the return path for ID; the part is rated VDS -20 V. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET; continuous drain current is rated -0.66 A and pulsed drain current -1.2 A (tp=10 µs). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | VGS = 0V, ID = -250μA | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | μA | VDS = -16V, VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -10 | | 10 | μA | VGS = ±8V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | -0.4 | -0.7 | 0 | V | VDS = VGS, ID = -250μA | 2 |
| Drain-source on-resistance | RDS(on) | | 465 | 560 | mΩ | VGS = -4.5V, ID = -0.5A | 2 |
| Drain-source on-resistance | RDS(on) | | 600 | 780 | mΩ | VGS = -2.5V, ID = -0.5A | 2 |
| Input capacitance | Ciss | | 113 | 170 | pF | | 2 |
| Output capacitance | Coss | | 15 | 25 | pF | | 2 |
| Reverse transfer capacitance | Crss | | 9 | 15 | pF | VDS = -16V, VGS = 0V, f = 1MHz | 2 |
| Diode forward voltage | VSD | | | -1.1 | V | IS = -0.5A, VGS = 0V | 2 |
| Drain-source voltage | VDS | | | -20 | V | | 1 |
| Gate-source voltage (typical) | VGS | -8 | | 8 | V | | 1 |
| Continuous drain current | ID | | | -0.66 | A | Surface mounted on FR4 board, minimum pad size (note 1) | 1 |
| Pulsed drain current | IDM | | | -1.2 | A | tp=10s (pulse width as printed) | 1 |
| Power dissipation | PD | | | 150 | mW | note 1 | 1 |
| Junction temperature | TJ | | | 150 | °C | | 1 |
| Storage temperature | TSTG | -55 | | 150 | °C | | 1 |
| Lead temperature for soldering | TL | | | 260 | °C | 1/8 inch from case for 10 s | 1 |
| Thermal resistance junction to ambient | RθJA | | | 833 | /W | note 1 | 1 |
| Forward transconductance | gFS | | 1.2 | | S | VDS = -10V, ID = -0.54A | 2 |
| Turn-on delay time | td(on) | | 9 | | ns | | 2 |
| Turn-on rise time | tr | | 5.8 | | ns | | 2 |
| Turn-off delay time | td(off) | | 32.7 | | ns | | 2 |
| Turn-off fall time | tf | | 20.3 | | ns | VGS = -4.5V, VDS = -10V, ID = -200mA, RGEN = 10Ω | 2 |
## CAD (KiCad official)
- Symbol: `TPM05K20WX`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `tpm05k20wx-etched.step` / `tpm05k20wx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tpm05k20wx.step` / `tpm05k20wx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shenzhen JingYang datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603122844721164288) (4 pp, sha256 `46ce0f29968475ec`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tpm05k20wx-datasheet.pdf)