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TPH8R80ANH

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by adom

TOSHIBA MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPH8R80ANH

TOSHIBA · MOSFETs · SOP-8

TPH8R80ANH from TOSHIBA, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (pins 1, 2, 3 are Source) of the N-channel MOSFET, with VDSS of 100 V.
2 S passive Source terminal (pins 1, 2, 3 are Source) of the N-channel MOSFET, with VDSS of 100 V.
3 S passive Source terminal (pins 1, 2, 3 are Source) of the N-channel MOSFET, with VDSS of 100 V.
4 G input Gate terminal with gate-source voltage limit of ±20 V and threshold Vth of 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA).
5 D passive Drain terminal (pins 5, 6, 7, 8 are Drain) with 100 V drain-source rating and RDS(ON) of 7.4 mΩ typ. at VGS = 10 V.
6 D passive Drain terminal (pins 5, 6, 7, 8 are Drain) with 100 V drain-source rating and RDS(ON) of 7.4 mΩ typ. at VGS = 10 V.
7 D passive Drain terminal (pins 5, 6, 7, 8 are Drain) with 100 V drain-source rating and RDS(ON) of 7.4 mΩ typ. at VGS = 10 V.
8 D passive Drain terminal (pins 5, 6, 7, 8 are Drain) with 100 V drain-source rating and RDS(ON) of 7.4 mΩ typ. at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 100 V 1
Gate-source voltage VGSS -20 20 V 1
Drain current (DC), silicon limit ID 59 A Silicon limit, Tc = 25 1
Drain current (DC) ID 32 A Tc = 25 1
Drain current (pulsed) IDP 139 A t = 1 ms 1
Power dissipation PD 61 W Tc = 25 1
Power dissipation PD 2.8 W t = 10 s, Note 3 1
Power dissipation PD 1.6 W t = 10 s, Note 4 1
Single-pulse avalanche energy EAS 79 mJ VDD = 60 V, Tch = 25 (initial), L = 0.084 mH, RG = 1.0 Ω, IAR = 32 A 1
Avalanche current IAR 32 A 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Channel-to-case thermal resistance Rth(ch-c) 2.04 °C/W Tc = 25 2
Channel-to-ambient thermal resistance Rth(ch-a) 44.6 °C/W t = 10 s, Note 3 2
Channel-to-ambient thermal resistance Rth(ch-a) 78.1 °C/W t = 10 s, Note 4 2
Gate leakage current IGSS -0.1 0.1 µA VGS = ±20 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 100 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 100 V ID = 10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX 65 V ID = 10 mA, VGS = -20 V 3
Gate threshold voltage Vth 2 4 V VDS = 10 V, ID = 0.5 mA 3
Drain-source on-resistance RDS(ON) 7.4 8.8 mΩ VGS = 10 V, ID = 16 A 3
Input capacitance Ciss 2180 2800 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 21 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 410 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 3
Gate resistance rg 0.8 1.2 Ω VDS = 50 V, VGS = 0 V, f = 1 MHz 3
Reverse drain current (pulsed) IDRP 139 A 3
Diode forward voltage VDSF -1.2 V IDR = 32 A, VGS = 0 V 3
Switching time (rise time) tr 7 ns See Figure 6.2.1 3
Switching time (turn-on time) ton 19 ns See Figure 6.2.1 3
Switching time (fall time) tf 12 ns See Figure 6.2.1 3
Switching time (turn-off time) toff 33 ns See Figure 6.2.1 3
Total gate charge Qg 33 nC VDD ≈ 50 V, VGS = 10 V, ID = 32 A 3
Gate-source charge 1 Qgs1 12 nC VDD ≈ 50 V, VGS = 10 V, ID = 32 A 3
Gate-drain charge Qgd 7.8 nC VDD ≈ 50 V, VGS = 10 V, ID = 32 A 3
Gate switch charge QSW 13 nC VDD ≈ 50 V, VGS = 10 V, ID = 32 A 3

CAD (KiCad official)

  • Symbol: TPH8R80ANH
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tph8r80anh-etched.step / tph8r80anh-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tph8r80anh.step / tph8r80anh.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 2b27189eaac35386, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF