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TPH2R408QM

Public Made by Adom

by adom

TOSHIBA Global Sourcing Parts, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPH2R408QM

TOSHIBA · Global Sourcing Parts · SOP-8

TPH2R408QM from TOSHIBA, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pins 1, 2, 3 are all Source).
2 S passive Source terminal of the N-channel MOSFET (pins 1, 2, 3 are all Source).
3 S passive Source terminal of the N-channel MOSFET (pins 1, 2, 3 are all Source).
4 G input Gate terminal, with VGSS limit of ±20 V and threshold Vth of 2.5 to 3.5 V at VDS = 10 V, ID = 1.0 mA.
5 D passive Drain terminal with VDSS of 80 V (pins 5, 6, 7, 8 are all Drain).
6 D passive Drain terminal with VDSS of 80 V (pins 5, 6, 7, 8 are all Drain).
7 D passive Drain terminal with VDSS of 80 V (pins 5, 6, 7, 8 are all Drain).
8 D passive Drain terminal with VDSS of 80 V (pins 5, 6, 7, 8 are all Drain).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOP-8
Category Global Sourcing Parts
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -0.1 0.1 µA VGS = ±20 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 80 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 80 V ID = 10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX 60 V ID = 10 mA, VGS = -20 V 3
Gate threshold voltage Vth 2.5 3.5 V VDS = 10 V, ID = 1.0 mA 3
Drain-source on-resistance RDS(ON) 2.5 3.5 mΩ VGS = 6 V, ID = 50 A 3
Drain-source on-resistance RDS(ON) 1.9 2.43 mΩ VGS = 10 V, ID = 50 A 3
Input capacitance Ciss 5870 pF VDS = 40 V, VGS = 0 V, f = 1 MHz 3
Gate resistance rg 1.9 2.9 Ω 3
Reverse drain current (pulsed) IDRP 500 A t = 100 µs 4
Diode forward voltage VDSF -1.2 V IDR = 120 A, VGS = 0 V 4
Drain-source voltage VDSS 80 V Ta = 25 °C 2
Gate-source voltage VGSS -20 20 V Ta = 25 °C 2
Drain current (pulsed) IDP 500 A t = 100 µs 2
Single-pulse avalanche energy EAS 144 mJ VDD = 60 V, Tch = 25 °C (initial), L = 8.5 µH, IAS = 120 A 2
Single-pulse avalanche current IAS 120 A VDD = 60 V, Tch = 25 °C (initial), L = 8.5 µH 2
Channel temperature Tch 175 °C 2
Storage temperature Tstg -55 175 °C 2
Channel-to-case thermal resistance Rth(ch-c) 0.71 °C/W Tc = 25 °C 2
Channel-to-ambient thermal resistance (a) Rth(ch-a) 50 °C/W Ta = 25 °C, board (a) 2
Channel-to-ambient thermal resistance (b) Rth(ch-a) 156 °C/W Ta = 25 °C, board (b) 2

CAD (KiCad official)

  • Symbol: TPH2R408QM
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tph2r408qm-etched.step / tph2r408qm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tph2r408qm.step / tph2r408qm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (10 pp, sha256 b6ef92a18b7c31a3, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF