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TPD65R940C

WUXI UNIGROUP MICRO · MOSFETs · TO-252

TPD65R940C from WUXI UNIGROUP MICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V (VGSS), with threshold VGS(th) of 2.5 V min to 4.0 V max at ID = 250 µA.
2 D passive Drain, also the exposed metal tab; drain-source voltage rated 650 V (VDSS) with 4 A continuous drain current.
3 S passive Source; connects to the body diode anode, with continuous body diode current of 3.9 A max (IS).

Key specifications

Parameter Value
Manufacturer WUXI UNIGROUP MICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (VGS = 0V) VDSS 650 V VGS = 0V 1
Continuous Drain Current ID 4 A 1
Pulsed Drain Current (note1) IDM 12 A 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy (note2) EAS 52.8 mJ 1
Avalanche Current (note1) IAR 0.8 A 1
Repetitive Avalanche Energy (note1) EAR 0.09 mJ 1
Power Dissipation (TC = 25ºC), TO-251/TO-252 column PD 28 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Case, TO-251/TO-252 column RthJC 4.4 ºC/W TO-251, TO-252 package column 1
Thermal Resistance, Junction-to-Ambient, TO-251/TO-252 column RthJA 62 ºC/W TO-251, TO-252 package column 1
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current (TJ = 25ºC) IDSS 1 μA VDS = 650V, VGS = 0V, TJ = 25ºC 2
Zero Gate Voltage Drain Current (TJ = 150ºC) IDSS 100 μA VDS = 650V, VGS = 0V, TJ = 150ºC 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±30V 2
Gate-Source Threshold Voltage VGS(th) 2.5 4 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance (Note3) RDS(on) 0.88 1 Ω VGS = 10V, ID = 1A 2
Continuous Body Diode Current IS 3.9 A TC = 25ºC 2
Pulsed Diode Forward Current ISM 12 A 2
Body Diode Voltage VSD 0.9 1.2 V TJ = 25ºC, ISD = 4A, VGS = 0V 2
Forward Transconductance (Note3) gfs 3 S VDS = 10V, ID = 1A 2
Input Capacitance Ciss 350 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 20 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 2.6 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Total Gate Charge Qg 7 nC VDD = 520V, ID = 4A, VGS = 10V 2
Gate-Source Charge Qgs 1.5 nC VDD = 520V, ID = 4A, VGS = 10V 2
Gate-Drain Charge Qgd 2.5 nC VDD = 520V, ID = 4A, VGS = 10V 2
Turn-on Delay Time td(on) 36 ns VDD = 400V, ID = 4A, RG = 25Ω 2
Turn-on Rise Time tr 27 ns VDD = 400V, ID = 4A, RG = 25Ω 2
Turn-off Delay Time td(off) 79 ns VDD = 400V, ID = 4A, RG = 25Ω 2
Turn-off Fall Time tf 29 ns VDD = 400V, ID = 4A, RG = 25Ω 2
Reverse Recovery Time trr 220 ns VR = 480V, IF = IS, diF/dt = 100A/μs 2
Reverse Recovery Charge Qrr 0.9 μC VR = 480V, IF = IS, diF/dt = 100A/μs 2
Peak Reverse Recovery Current Irrm 8 A VR = 480V, IF = IS, diF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: TPD65R940C
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: tpd65r940c-etched.step / tpd65r940c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpd65r940c.step / tpd65r940c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WUXI UNIGROUP MICRO datasheet (9 pp, sha256 c082e7e5b782c3c7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF