component
TPD65R940C
Public Made by Adomby adom
WUXI UNIGROUP MICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
| docs | 24d ago |
| viewers | 24d ago |
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| page.json | 24d ago |
| README.md | 24d ago |
| tpd65r940c-etched.glb | 24d ago |
| tpd65r940c-etched.step | 24d ago |
| tpd65r940c-hero.glb | 24d ago |
| tpd65r940c-hero.overlay.json | 24d ago |
| tpd65r940c.glb | 24d ago |
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TPD65R940C
WUXI UNIGROUP MICRO · MOSFETs · TO-252
TPD65R940C from WUXI UNIGROUP MICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V (VGSS), with threshold VGS(th) of 2.5 V min to 4.0 V max at ID = 250 µA. |
| 2 | D | passive | Drain, also the exposed metal tab; drain-source voltage rated 650 V (VDSS) with 4 A continuous drain current. |
| 3 | S | passive | Source; connects to the body diode anode, with continuous body diode current of 3.9 A max (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WUXI UNIGROUP MICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (VGS = 0V) | VDSS | 650 | V | VGS = 0V | 1 | ||
| Continuous Drain Current | ID | 4 | A | 1 | |||
| Pulsed Drain Current (note1) | IDM | 12 | A | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy (note2) | EAS | 52.8 | mJ | 1 | |||
| Avalanche Current (note1) | IAR | 0.8 | A | 1 | |||
| Repetitive Avalanche Energy (note1) | EAR | 0.09 | mJ | 1 | |||
| Power Dissipation (TC = 25ºC), TO-251/TO-252 column | PD | 28 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Case, TO-251/TO-252 column | RthJC | 4.4 | ºC/W | TO-251, TO-252 package column | 1 | ||
| Thermal Resistance, Junction-to-Ambient, TO-251/TO-252 column | RthJA | 62 | ºC/W | TO-251, TO-252 package column | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS | 1 | μA | VDS = 650V, VGS = 0V, TJ = 25ºC | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 150ºC) | IDSS | 100 | μA | VDS = 650V, VGS = 0V, TJ = 150ºC | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±30V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-Source On-Resistance (Note3) | RDS(on) | 0.88 | 1 | Ω | VGS = 10V, ID = 1A | 2 | |
| Continuous Body Diode Current | IS | 3.9 | A | TC = 25ºC | 2 | ||
| Pulsed Diode Forward Current | ISM | 12 | A | 2 | |||
| Body Diode Voltage | VSD | 0.9 | 1.2 | V | TJ = 25ºC, ISD = 4A, VGS = 0V | 2 | |
| Forward Transconductance (Note3) | gfs | 3 | S | VDS = 10V, ID = 1A | 2 | ||
| Input Capacitance | Ciss | 350 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 20 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 2.6 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 7 | nC | VDD = 520V, ID = 4A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 1.5 | nC | VDD = 520V, ID = 4A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 2.5 | nC | VDD = 520V, ID = 4A, VGS = 10V | 2 | ||
| Turn-on Delay Time | td(on) | 36 | ns | VDD = 400V, ID = 4A, RG = 25Ω | 2 | ||
| Turn-on Rise Time | tr | 27 | ns | VDD = 400V, ID = 4A, RG = 25Ω | 2 | ||
| Turn-off Delay Time | td(off) | 79 | ns | VDD = 400V, ID = 4A, RG = 25Ω | 2 | ||
| Turn-off Fall Time | tf | 29 | ns | VDD = 400V, ID = 4A, RG = 25Ω | 2 | ||
| Reverse Recovery Time | trr | 220 | ns | VR = 480V, IF = IS, diF/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 0.9 | μC | VR = 480V, IF = IS, diF/dt = 100A/μs | 2 | ||
| Peak Reverse Recovery Current | Irrm | 8 | A | VR = 480V, IF = IS, diF/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
TPD65R940C - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
tpd65r940c-etched.step/tpd65r940c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpd65r940c.step/tpd65r940c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WUXI UNIGROUP MICRO datasheet (9 pp, sha256
c082e7e5b782c3c7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).