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TPD4E001DPKR

Texas Instruments · ESD And Surge Protection (TVS/ESD) · DFN-6(1.6x1.6)

TPD4E001DPKR from Texas Instruments, in a DFN-6(1.6x1.6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IO1 bidirectional ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs).
2 IO2 bidirectional ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs).
3 GND power_in Ground reference for the device.
4 IO3 bidirectional ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs).
5 IO4 bidirectional ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs).
6 VCC power_in Power-supply input with an operating range of 0.9 V to 5.5 V; bypass VCC to GND with a 0.1-µF ceramic capacitor.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package DFN-6(1.6x1.6)
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage (absolute maximum) VCC -0.3 7 V 4
Operating voltage, VCC pin VCC 0.9 5.5 V 4
Operating free-air temperature TA -40 85 °C 4
Storage temperature Tstg -65 150 °C 4
IO voltage tolerance VI/O -0.3 V Maximum printed as VCC + 0.3 V 4
Operating voltage, IO1 and IO2 pins 0 V Maximum printed as VCC 4
IEC 61000-4-5 peak pulse current I(Surge) 5.5 A TP = 8/20µs, IOx pins 4
IEC 61000-4-5 peak pulse power P(Surge) 100 W TP = 8/20µs, IOx pins 4
Junction temperature TJ 150 °C 4
Bump temperature (soldering) 220 °C Infrared (15s) 4
Bump temperature (soldering) 215 °C Vapor phase (60s) 4
Lead temperature (soldering) 300 °C 10s 4
Supply current ICC 1 100 nA 5
Supply voltage VCC 0.9 5.5 V 5
Diode forward voltage VF 0.65 0.95 V IF = 10mA 5
Breakdown voltage VBR 11 V IBR = 10mA 5
Surge strike clamp voltage, positive transients VC 17 V Surge strike on IO pin, GND pin grounded, IPP = 5A, 8/20µs 5
Reverse stand-off voltage VRWM 5.5 V IO pin to GND pin 5
Channel leakage current II/O -1 1 nA Vi/o = GND to VCC 5
Channel input capacitance CI/O 1.5 pF VCC = 5V, bias of VCC/2; ƒ = 10MHz 5
Junction-to-ambient thermal resistance (DPK) RθJA 247.6 °C/W 5
Junction-to-case (top) thermal resistance (DPK) RθJC(top) 124.8 °C/W 5
Junction-to-board thermal resistance (DPK) RθJB 204.2 °C/W 5
Junction-to-top characterization parameter (DPK) ψJT 19.2 °C/W 5
Junction-to-board characterization parameter (DPK) ψJB 209.3 °C/W 5

CAD (KiCad official)

  • Symbol: TPD4E001DPKR
  • Footprint: OptoDevice:Renesas_DFN-6_1.5x1.6mm_P0.5mm
  • 3D model: DFN-6(1.6x1.6) (KiCad packages3D, STEP)
  • 3D model files: tpd4e001dpkr-etched.step / tpd4e001dpkr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpd4e001dpkr.step / tpd4e001dpkr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (32 pp, sha256 e10f97586a1aa314, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF