component
TPD4E001DPKR
Public Made by Adomby adom
Texas Instruments ESD And Surge Protection (TVS/ESD), DFN-6(1.6x1.6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
TPD4E001DPKR
Texas Instruments · ESD And Surge Protection (TVS/ESD) · DFN-6(1.6x1.6)
TPD4E001DPKR from Texas Instruments, in a DFN-6(1.6x1.6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IO1 | bidirectional | ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs). |
| 2 | IO2 | bidirectional | ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs). |
| 3 | GND | power_in | Ground reference for the device. |
| 4 | IO3 | bidirectional | ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs). |
| 5 | IO4 | bidirectional | ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs). |
| 6 | VCC | power_in | Power-supply input with an operating range of 0.9 V to 5.5 V; bypass VCC to GND with a 0.1-µF ceramic capacitor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | DFN-6(1.6x1.6) |
| Category | Circuit Protection |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage (absolute maximum) | VCC | -0.3 | 7 | V | 4 | ||
| Operating voltage, VCC pin | VCC | 0.9 | 5.5 | V | 4 | ||
| Operating free-air temperature | TA | -40 | 85 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| IO voltage tolerance | VI/O | -0.3 | V | Maximum printed as VCC + 0.3 V | 4 | ||
| Operating voltage, IO1 and IO2 pins | 0 | V | Maximum printed as VCC | 4 | |||
| IEC 61000-4-5 peak pulse current | I(Surge) | 5.5 | A | TP = 8/20µs, IOx pins | 4 | ||
| IEC 61000-4-5 peak pulse power | P(Surge) | 100 | W | TP = 8/20µs, IOx pins | 4 | ||
| Junction temperature | TJ | 150 | °C | 4 | |||
| Bump temperature (soldering) | 220 | °C | Infrared (15s) | 4 | |||
| Bump temperature (soldering) | 215 | °C | Vapor phase (60s) | 4 | |||
| Lead temperature (soldering) | 300 | °C | 10s | 4 | |||
| Supply current | ICC | 1 | 100 | nA | 5 | ||
| Supply voltage | VCC | 0.9 | 5.5 | V | 5 | ||
| Diode forward voltage | VF | 0.65 | 0.95 | V | IF = 10mA | 5 | |
| Breakdown voltage | VBR | 11 | V | IBR = 10mA | 5 | ||
| Surge strike clamp voltage, positive transients | VC | 17 | V | Surge strike on IO pin, GND pin grounded, IPP = 5A, 8/20µs | 5 | ||
| Reverse stand-off voltage | VRWM | 5.5 | V | IO pin to GND pin | 5 | ||
| Channel leakage current | II/O | -1 | 1 | nA | Vi/o = GND to VCC | 5 | |
| Channel input capacitance | CI/O | 1.5 | pF | VCC = 5V, bias of VCC/2; ƒ = 10MHz | 5 | ||
| Junction-to-ambient thermal resistance (DPK) | RθJA | 247.6 | °C/W | 5 | |||
| Junction-to-case (top) thermal resistance (DPK) | RθJC(top) | 124.8 | °C/W | 5 | |||
| Junction-to-board thermal resistance (DPK) | RθJB | 204.2 | °C/W | 5 | |||
| Junction-to-top characterization parameter (DPK) | ψJT | 19.2 | °C/W | 5 | |||
| Junction-to-board characterization parameter (DPK) | ψJB | 209.3 | °C/W | 5 |
CAD (KiCad official)
- Symbol:
TPD4E001DPKR - Footprint:
OptoDevice:Renesas_DFN-6_1.5x1.6mm_P0.5mm - 3D model: DFN-6(1.6x1.6) (KiCad packages3D, STEP)
- 3D model files:
tpd4e001dpkr-etched.step/tpd4e001dpkr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpd4e001dpkr.step/tpd4e001dpkr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (32 pp, sha256
e10f97586a1aa314, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPD4E001DPKR
**Texas Instruments** · ESD And Surge Protection (TVS/ESD) · DFN-6(1.6x1.6)
TPD4E001DPKR from Texas Instruments, in a DFN-6(1.6x1.6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IO1 | bidirectional | ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs). |
| 2 | IO2 | bidirectional | ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs). |
| 3 | GND | power_in | Ground reference for the device. |
| 4 | IO3 | bidirectional | ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs). |
| 5 | IO4 | bidirectional | ESD-protected I/O channel whose voltage must stay between -0.3 V and VCC + 0.3 V, with a peak pulse current rating of 5.5 A (IEC 61000-4-5, 8/20 µs). |
| 6 | VCC | power_in | Power-supply input with an operating range of 0.9 V to 5.5 V; bypass VCC to GND with a 0.1-µF ceramic capacitor. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | DFN-6(1.6x1.6) |
| Category | Circuit Protection |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage (absolute maximum) | VCC | -0.3 | | 7 | V | | 4 |
| Operating voltage, VCC pin | VCC | 0.9 | | 5.5 | V | | 4 |
| Operating free-air temperature | TA | -40 | | 85 | °C | | 4 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 4 |
| IO voltage tolerance | VI/O | -0.3 | | | V | Maximum printed as VCC + 0.3 V | 4 |
| Operating voltage, IO1 and IO2 pins | | 0 | | | V | Maximum printed as VCC | 4 |
| IEC 61000-4-5 peak pulse current | I(Surge) | | | 5.5 | A | TP = 8/20µs, IOx pins | 4 |
| IEC 61000-4-5 peak pulse power | P(Surge) | | | 100 | W | TP = 8/20µs, IOx pins | 4 |
| Junction temperature | TJ | | | 150 | °C | | 4 |
| Bump temperature (soldering) | | | | 220 | °C | Infrared (15s) | 4 |
| Bump temperature (soldering) | | | | 215 | °C | Vapor phase (60s) | 4 |
| Lead temperature (soldering) | | | | 300 | °C | 10s | 4 |
| Supply current | ICC | | 1 | 100 | nA | | 5 |
| Supply voltage | VCC | 0.9 | | 5.5 | V | | 5 |
| Diode forward voltage | VF | | 0.65 | 0.95 | V | IF = 10mA | 5 |
| Breakdown voltage | VBR | 11 | | | V | IBR = 10mA | 5 |
| Surge strike clamp voltage, positive transients | VC | | | 17 | V | Surge strike on IO pin, GND pin grounded, IPP = 5A, 8/20µs | 5 |
| Reverse stand-off voltage | VRWM | | | 5.5 | V | IO pin to GND pin | 5 |
| Channel leakage current | II/O | -1 | | 1 | nA | Vi/o = GND to VCC | 5 |
| Channel input capacitance | CI/O | | 1.5 | | pF | VCC = 5V, bias of VCC/2; ƒ = 10MHz | 5 |
| Junction-to-ambient thermal resistance (DPK) | RθJA | | 247.6 | | °C/W | | 5 |
| Junction-to-case (top) thermal resistance (DPK) | RθJC(top) | | 124.8 | | °C/W | | 5 |
| Junction-to-board thermal resistance (DPK) | RθJB | | 204.2 | | °C/W | | 5 |
| Junction-to-top characterization parameter (DPK) | ψJT | | 19.2 | | °C/W | | 5 |
| Junction-to-board characterization parameter (DPK) | ψJB | | 209.3 | | °C/W | | 5 |
## CAD (KiCad official)
- Symbol: `TPD4E001DPKR`
- Footprint: `OptoDevice:Renesas_DFN-6_1.5x1.6mm_P0.5mm`
- 3D model: DFN-6(1.6x1.6) (KiCad packages3D, STEP)
- 3D model files: `tpd4e001dpkr-etched.step` / `tpd4e001dpkr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tpd4e001dpkr.step` / `tpd4e001dpkr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/tpd4e001.pdf) (32 pp, sha256 `e10f97586a1aa314`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tpd4e001dpkr-datasheet.pdf)