TPC8214-H-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of N-channel MOSFET 1; VDS rating 100 V.
2	G1	input	Gate of N-channel MOSFET 1; VGS maximum ±20 V.
3	S2	passive	Source of N-channel MOSFET 2; VDS rating 100 V.
4	G2	input	Gate of N-channel MOSFET 2; VGS maximum ±20 V.
5	D2	passive	Drain of N-channel MOSFET 2, tied with pin 6; 100 V VDS, RDS(on) 0.063 Ω at VGS = 10 V.
6	D2	passive	Drain of N-channel MOSFET 2, tied with pin 5; 100 V VDS, RDS(on) 0.063 Ω at VGS = 10 V.
7	D1	passive	Drain of N-channel MOSFET 1, tied with pin 8; 100 V VDS, RDS(on) 0.063 Ω at VGS = 10 V.
8	D1	passive	Drain of N-channel MOSFET 1, tied with pin 7; 100 V VDS, RDS(on) 0.063 Ω at VGS = 10 V.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			100	V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	TA = 25 °C	1
Continuous Drain Current	ID			5.8	A	TJ = 150 °C, TC = 25 °C	1
Continuous Drain Current	ID			4.4	A	TJ = 150 °C, TC = 70 °C	1
Continuous Drain Current	ID			3.4	A	TJ = 150 °C, TA = 25 °C (a, b)	1
Continuous Drain Current	ID			2.5	A	TJ = 150 °C, TA = 70 °C (a, b)	1
Pulsed Drain Current	IDM			20	A		1
Continuous Source-Drain Diode Current	IS			5	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			2.1	A	TA = 25 °C (a, b)	1
Single Avalanche Current	IAS			19	A	L = 0.1 mH	1
Single Avalanche Energy	EAS			18	mJ	L = 0.1 mH	1
Maximum Power Dissipation	PD			5	W	TC = 25 °C	1
Maximum Power Dissipation	PD			3.2	W	TC = 70 °C	1
Maximum Power Dissipation	PD			2.5	W	TA = 25 °C (a, b)	1
Maximum Power Dissipation	PD			1.6	W	TA = 70 °C (a, b)	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance	RthJA		37	50	°C/W	t ≤ 10 s	1
Junction-to-Foot (Drain) Thermal Resistance	RthJF		17	21	°C/W	Steady State	1
Drain-Source Breakdown Voltage	VDS	100			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 100 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 100 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	20			A	VDS ≥ 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.063	Ω	VGS = 10 V, ID = 3.4 A	2
Drain-Source On-State Resistance	RDS(on)			0.084	Ω	VGS = 6 V, ID = 2.8 A	2
Total Gate Charge	Qg		13.5	20	nC	VDS = 50 V, VGS = 10 V, ID = 3.4 A	2
Total Gate Charge	Qg		9	13.5	nC	VDS = 50 V, VGS = 6 V, ID = 3.4 A	2
Turn-On Delay Time	td(on)		15	25	ns	VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω	2
Rise Time	tr		12	20	ns	VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		12	20	ns	VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω	2
Fall Time	tf		10	15	ns	VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		10	15	ns	VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		15	25	ns	VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			5	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			20	A		2
Body Diode Voltage	VSD		0.8	1.2	V	IS = 3.5 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr		45	70	ns	IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		80	120	nC	IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C	2
VDS Temperature Coefficient	ΔVDS/TJ		120		mV/°C	ID = 250 µA	2
Input Capacitance	Ciss		600		pF	VDS = 50 V, VGS = 0 V, f = 1 MHz	2
Output Capacitance	Coss		90		pF	VDS = 50 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		50		pF	VDS = 50 V, VGS = 0 V, f = 1 MHz	2

CAD (KiCad official)

Symbol: TPC8214-H-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: tpc8214-h-vb-etched.step / tpc8214-h-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpc8214-h-vb.step / tpc8214-h-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 969190047b49fe9f, retrieved 2026-10-30, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

TPC8214-H-VB

Verified TPC8214-H-VB

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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