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TPC8107

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPC8107

UMW · MOSFETs · SOP-8

TPC8107 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 as source.
2 S passive SOURCE terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 as source.
3 S passive SOURCE terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 as source.
4 G input GATE terminal; the absolute maximum gate-source voltage VGS is ±20 V.
5 D passive DRAIN terminal; the absolute maximum drain-source voltage VDS is -30 V.
6 D passive DRAIN terminal; the absolute maximum drain-source voltage VDS is -30 V.
7 D passive DRAIN terminal; the absolute maximum drain-source voltage VDS is -30 V.
8 D passive DRAIN terminal; the absolute maximum drain-source voltage VDS is -30 V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -13.5 A TJ = 150 °C; TC=25°C 1
Continuous Drain Current ID -11.9 A TJ = 150 °C; TC=70°C 1
Continuous Drain Current ID -10.9 A TJ = 150 °C; TA=25°C; notes a,b 1
Continuous Drain Current ID -8.6 A TJ = 150 °C; TA=70°C; notes a,b 1
Pulsed Drain Current IDM -50 A 1
Continuous Source-Drain Diode Current IS -4.1 A TC=25°C 1
Continuous Source-Drain Diode Current IS -2.2 A TA=25°C 1
Avalanche current IAS -20 A L = 0.1 mH 1
Single-pulse avalanche energy EAS 20 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 5 W TC=25°C 1
Maximum Power Dissipation PD 3.2 W TC=70°C 1
Maximum Power Dissipation PD 2.7 W TA=25°C; notes a,b 1
Maximum Power Dissipation PD 1.7 W TA=70°C; notes a,b 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Drain-Source Breakdown Voltage VDS -30 V VDS=0V, ID=-250μA 3
Gate-Source Threshold Voltage VGS(th) -1.4 -2.5 V VDS=VGS, ID=-250μA 3
Gate-Source Leakage IGSS -100 100 nA VDS=0V, VGS=±25V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -5 µA VDS=-30V, VGS=0V, TJ=55°C 3
Drain-Source On-State Resistance RDS(ON) 11 mΩ VGS=-10V, ID=-10A 3
Drain-Source On-State Resistance RDS(ON) 15 mΩ VGS=-4.5V, ID=-8A 3
Body Diode Voltage VSD -1.2 V IS=-3A, VGS=0V 4
Continuous Source-Drain Diode Current IS -4.1 A TC=25°C 4
Pulse Diode Forward Current ISM -60 A 4
Maximum Junction-to-Ambient RthJA 38 46 °C/W t ≤10s 2
Maximum Junction-to-Foot RthJF 20 25 °C/W t ≤10s 2
Maximum Junction-to-Ambient (steady state) RthJA 85 °C/W Steady-State; note c 2

CAD (KiCad official)

  • Symbol: TPC8107
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tpc8107-etched.step / tpc8107-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpc8107.step / tpc8107.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 a2b9a12d2e2c390c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF