# TPA741DR

**Texas Instruments** · Audio Amplifiers · SOIC-8

TPA741DR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SHUTDOWN | input | SHUTDOWN places the entire device in shutdown mode when held high. |
| 2 | BYPASS | passive | BYPASS is the tap to the voltage divider for internal mid-supply bias and should be connected to a 0.1-µF to 2.2-µF capacitor when used as an audio amplifier. |
| 3 | IN+ | input | IN+ is the noninverting input and is typically tied to the BYPASS terminal for single-ended (SE) operation. |
| 4 | IN- | input | IN- is the inverting input and is typically used as the audio input terminal. |
| 5 | VO+ | output | VO+ is the positive BTL output. |
| 6 | VDD | power_in | VDD is the supply voltage terminal, with an absolute maximum supply voltage of 6 V. |
| 7 | GND | power_in | GND is the ground connection. |
| 8 | VO- | output | VO- is the negative BTL output. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Amplifiers/Comparators |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VDD | 2.5 |  | 5.5 | V |  | 3 |
| Operating free-air temperature | TA | -40 |  | 85 | °C |  | 3 |
| Supply voltage | VDD |  |  | 6 | V |  | 2 |
| Input voltage | VI | -0.3 |  |  | V | Upper limit printed as VDD + 0.3 V | 2 |
| Operating free-air temperature | TA | -40 |  | 85 | °C |  | 2 |
| Operating junction temperature range | TJ | -40 |  | 150 | °C |  | 2 |
| Storage temperature range | Tstg | -65 |  | 150 | °C |  | 2 |
| Lead temperature |  |  |  | 260 | °C | 1,6 mm (1/16 inch) from case for 10 seconds | 2 |
| Power rating, D package (SOIC) |  |  |  | 725 | mW | TA ≤ 25°C | 2 |
| Power rating, D package (SOIC) |  |  |  | 464 | mW | TA = 70°C | 2 |
| Power rating, D package (SOIC) |  |  |  | 377 | mW | TA = 85°C | 2 |
| Derating factor, D package (SOIC) |  |  | 5.8 |  | mW/°C |  | 2 |
| Output offset voltage (measured differentially) | /VOS/ |  | 20 |  | mV | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; SHUTDOWN = 0 V, RL = 8 Ω, RF = 10 kΩ | 3 |
| Supply current | IDD |  | 1.35 | 2.5 | mA | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; SHUTDOWN = 0 V, RF = 10 kΩ | 3 |
| Supply current, shutdown mode | IDD(SD) |  | 7 | 50 | µA | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; SHUTDOWN = VDD, RF = 10 kΩ (see Figure 6) | 3 |
| Output offset voltage (measured differentially) | /VOS/ |  | 20 |  | mV | VDD = 5 V, TA = 25°C, RL = 8Ω; SHUTDOWN = 0 V, RL = 8 Ω, RF = 10 kΩ | 4 |
| Supply current | IDD |  | 1.45 | 2.5 | mA | VDD = 5 V, TA = 25°C, RL = 8Ω; SHUTDOWN = 0 V, RF = 10 kΩ | 3 |
| Supply current, shutdown mode | IDD(SD) |  | 50 | 100 | µA | VDD = 5 V, TA = 25°C, RL = 8Ω; SHUTDOWN = VDD, RF = 10 kΩ (see Figure 4) | 3 |
| Power supply rejection ratio | PSRR |  | 85 |  | dB | VDD = 3.2 V to 3.4 V | 3 |
| Power supply rejection ratio | PSRR |  | 78 |  | dB | VDD = 4.9 V to 5.1 V | 3 |
| High-level input current (SHUTDOWN) | /IIH/ |  | 1 |  | µA | SHUTDOWN, VDD = 3.3 V, Vi = 3.3 V | 3 |
| Low-level input current (SHUTDOWN) | /IIL/ |  | 1 |  | µA | SHUTDOWN, VDD = 3.3 V, Vi = 0 V | 3 |
| Output power | PO |  | 250 |  | mW | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; THD = 0.5%, See Figure 9 | 3 |
| Total harmonic distortion plus noise | THD + N |  | 0.55 |  | % | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; PO = 250 mW, f = 200 Hz to 4 kHz, See Figure 7 | 3 |
| Maximum output power bandwidth | BOM |  | 20 |  | kHz | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; AV = -2 V/V, THD = 2%, See Figure 7 | 3 |
| Unity-gain bandwidth | B1 |  | 1.4 |  | MHz | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; Open loop, See Figure 15 | 3 |
| Supply ripple rejection ratio | kSVR |  | 79 |  | dB | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; f = 1 kHz, CB = 1 µF, See Figure 2 | 3 |
| Noise output voltage | Vn |  | 17 |  | µV(rms) | VDD = 3.3 V, TA = 25°C, RL = 8 Ω; AV = -1 V/V, CB = 0.1 µF, See Figure 19 | 3 |
| Output power | PO |  | 700 |  | mW | VDD = 5 V, TA = 25°C, RL = 8Ω; THD = 0.5%, See Figure 13 | 4 |
| Total harmonic distortion plus noise | THD + N |  | 0.5 |  | % | VDD = 5 V, TA = 25°C, RL = 8Ω; PO = 250 mW, f = 200 Hz to 4 kHz, See Figure 11 | 4 |
| Maximum output power bandwidth | BOM |  | 20 |  | kHz | VDD = 5 V, TA = 25°C, RL = 8Ω; AV = -2 V/V, THD = 2%, See Figure 11 | 4 |
| Unity-gain bandwidth | B1 |  | 1.4 |  | MHz | VDD = 5 V, TA = 25°C, RL = 8Ω; Open loop, See Figure 16 | 4 |
| Supply ripple rejection ratio | kSVR |  | 80 |  | dB | VDD = 5 V, TA = 25°C, RL = 8Ω; f = 1 kHz, CB = 1 µF, See Figure 2 | 4 |
| Noise output voltage | Vn |  | 17 |  | µV(rms) | VDD = 5 V, TA = 25°C, RL = 8Ω; AV = -1 V/V, CB = 0.1 µF, See Figure 20 | 4 |

## CAD (KiCad official)

- Symbol: `TPA741DR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `tpa741dr-etched.step` / `tpa741dr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tpa741dr.step` / `tpa741dr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/tpa741.pdf) (31 pp, sha256 `4c382207c8b52f6f`, retrieved 2026-10-09, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tpa741dr-datasheet.pdf)