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TPA60R160D

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WUXI UNIGROUP MICRO MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPA60R160D

WUXI UNIGROUP MICRO · MOSFETs · TO-220F-3

TPA60R160D from WUXI UNIGROUP MICRO, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS = 10V for the stated RDS(on), threshold 2.5V to 4.5V at ID = 250µA, absolute maximum VGSS ±30V.
2 D passive Drain; 600V minimum breakdown voltage, 20A continuous at TC = 25ºC and 60A pulsed drain current.
3 S passive Source; current return path, with body diode continuous forward current of 20A and 60A pulsed.

Key specifications

Parameter Value
Manufacturer WUXI UNIGROUP MICRO
Package TO-220F-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 600 V VGS = 0V, ID = 250µA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 600V, VGS = 0V, TJ = 25ºC 3
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 600V, VGS = 0V, TJ = 150ºC 3
Gate-Source Leakage Current IGSS -100 100 nA VGS = ±30V 3
Gate-Source Threshold Voltage VGS(th) 2.5 4.5 V VDS = VGS, ID = 250µA 3
Drain-Source On-State Resistance RDS(on) 0.13 0.16 Ω VGS = 10V, ID = 10A 3
Body Diode Forward Voltage VSD 0.95 1.2 V TJ = 25ºC, ISD = 20A, VGS = 0V 3
Continuous Drain Current ID 20 A TC = 25ºC 2
Continuous Drain Current ID 12 A TC = 100ºC 2
Pulsed Drain Current ID,pulse 60 A 2
Gate-Source Voltage VGSS -30 30 V 2
Single Pulse Avalanche Energy EAS 450 mJ VDD = 50V, RG = 25Ω, Starting TJ = 25°C 2
Avalanche Current IAR 9.5 A 2
MOSFET dv/dt Ruggedness dv/dt 50 V/ns VDS = 0...650V 2
Power Dissipation PD 34 W For TO-220F 2
Continuous Diode Forward Current IS 20 A 2
Diode Pulsed Current IS,pulse 60 A 2
Reverse Diode dv/dt dv/dt 5 A/us 2
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 2
Thermal Resistance, Junction-to-Case RthJC 3.7 ºC/W For TO-220F 2
Thermal Resistance, Junction-to-Ambient RthJA 80 ºC/W For TO-220F 2
Input Capacitance Ciss 2216 pF VGS = 0V, VDS = 50V, f = 1.0MHz 3
Output Capacitance Coss 90 pF VGS = 0V, VDS = 50V, f = 1.0MHz 3
Reverse Transfer Capacitance Crss 6 pF VGS = 0V, VDS = 50V, f = 1.0MHz 3
Total Gate Charge Qg 36 nC VDD = 520V, ID = 20A, VGS = 10V 3
Gate-Source Charge Qgs 10 nC VDD = 520V, ID = 20A, VGS = 10V 3
Gate-Drain Charge Qgd 12 nC VDD = 520V, ID = 20A, VGS = 10V 3
Turn-on Delay Time td(on) 45 ns VDD = 400V, ID = 20A, RG = 25Ω 3
Turn-on Rise Time tr 68 ns VDD = 400V, ID = 20A, RG = 25Ω 3
Turn-off Delay Time td(off) 130 ns VDD = 400V, ID = 20A, RG = 25Ω 3
Turn-off Fall Time tf 9 ns VDD = 400V, ID = 20A, RG = 25Ω 3
Reverse Recovery Time trr 450 ns VR = 400V, IS=3A, diF/dt = 100A/μs 3
Reverse Recovery Charge Qrr 8.1 μC VR = 400V, IS=3A, diF/dt = 100A/μs 3
Peak Reverse Recovery Current Irrm 3.4 A VR = 400V, IS=3A, diF/dt = 100A/μs 3

CAD (KiCad official)

  • Symbol: TPA60R160D
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WUXI UNIGROUP MICRO datasheet (8 pp, sha256 fbc114616eefda14, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF