TP6841S6-A

{
 "schema": "adom.pads/1",
 "slug": "tp6841s6-a",
 "footprint": "SOT-23-6",
 "generated_from": {
  "footprint": "SOT-23-6@sha256:f341c73aac9dcb55",
  "pins": "page.json:component.pins",
  "overrides": null
 },
 "pin1": {
  "pad": "1",
  "at": [
   -1.1375,
   -0.95
  ],
  "corner": "top-left",
  "source": "silk-marker",
  "derived_from": "SOT-23-6@sha256:f341c73aac9dcb55"
 },
 "pad_count": 6,
 "symbol_pins": [
  "1",
  "2",
  "3",
  "4",
  "5",
  "6"
 ],
 "paste_apertures": 0,
 "issues": [],
 "pads": [
  {
   "pad": "1",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -1.1375,
    -0.95
   ],
   "rot": 0.0,
   "size": [
    1.325,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "1",
   "name": "BST",
   "type": "passive",
   "description": "Bootstrap pin for the high-side N-channel MOSFET gate drive. Connect a 100nF ceramic capacitor from BST to SW; the capacitor is charged from the internal 4.0V rail when SW is low to generate a gate voltage above VIN.",
   "is_pin1": true,
   "source": {
    "geometry": "SOT-23-6.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "2",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -1.1375,
    0.0
   ],
   "rot": 0.0,
   "size": [
    1.325,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "2",
   "name": "GND",
   "type": "power_in",
   "description": "Device ground. Serves as the reference for the control circuitry and the return for the power stage. Absolute range Vss-0.3V to Vss+45V per the datasheet.",
   "is_pin1": false,
   "source": {
    "geometry": "SOT-23-6.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "3",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -1.1375,
    0.95
   ],
   "rot": 0.0,
   "size": [
    1.325,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "3",
   "name": "FB",
   "type": "input",
   "description": "Feedback input to the internal error amplifier. Connect an external resistor divider from VOUT to FB and GND to set the output voltage; internal reference VREF = 0.8V (typ, 0.776-0.824V). Abs max Vss-0.3V to Vss+6V.",
   "is_pin1": false,
   "source": {
    "geometry": "SOT-23-6.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "4",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    1.1375,
    0.95
   ],
   "rot": 0.0,
   "size": [
    1.325,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "4",
   "name": "EN",
   "type": "input",
   "description": "Enable input for the IC. Drive high (rising threshold ~1.3V) to enable the regulator, low (falling ~1.2V, shutdown below 0.3V) to disable. Can be tied to a resistive divider from VIN for programmable UVLO. Abs max Vss-0.3V to Vss+45V; EN input current ~2µA at VEN=5V.",
   "is_pin1": false,
   "source": {
    "geometry": "SOT-23-6.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "5",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    1.1375,
    0.0
   ],
   "rot": 0.0,
   "size": [
    1.325,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "5",
   "name": "VIN",
   "type": "power_in",
   "description": "Supply voltage input, 4.5V to 40V operating (abs max Vss+45V). Provides power to the internal high-side MOSFET drain and bias circuitry. Bypass with a 22µF ceramic capacitor to GND, plus a 0.1µF high-frequency capacitor placed close to the pin.",
   "is_pin1": false,
   "source": {
    "geometry": "SOT-23-6.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "6",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    1.1375,
    -0.95
   ],
   "rot": 0.0,
   "size": [
    1.325,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "6",
   "name": "SW",
   "type": "output",
   "description": "Switch node output. Connects the source of the integrated high-side N-MOSFET and drain of the low-side N-MOSFET to the external inductor. High-side RDS(on) ~450mΩ, low-side ~270mΩ; high-side current limit ~2A. Abs max Vss-0.3V to VIN+0.3V.",
   "is_pin1": false,
   "source": {
    "geometry": "SOT-23-6.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  }
 ]
}