component
TP0620N3-G
Public Made by Adomby adom
Microchip Tech MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TP0620N3-G
Microchip Tech · MOSFETs · TO-92-3
TP0620N3-G from Microchip Tech, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel enhancement-mode vertical DMOS FET. |
| 2 | Gate | input | Gate terminal with high input impedance; absolute maximum gate-to-source voltage is ±20V and threshold is -1V to -2.4V at ID = -1 mA. |
| 3 | Drain | passive | Drain terminal with drain-to-source breakdown voltage of -200V minimum and continuous drain current of -175 mA in TO-92. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | TO-92-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -200 | V | VGS = 0V, ID = -2 mA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.4 | V | VGS = VDS, ID = -1 mA | 2 | |
| Change in VGS(th) with Temperature | ΔVGS(th) | -4.5 | mV/°C | VGS = VDS, ID = -1 mA (Note 1) | 2 | ||
| Gate Body Leakage Current | IGSS | -100 | nA | VGS = ± 20V, VDS = 0V | 2 | ||
| Zero-Gate Voltage Drain Current | IDSS | -10 | µA | VGS = 0V, VDS = Maximum rating | 2 | ||
| Zero-Gate Voltage Drain Current (125°C) | IDSS | -1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) | 2 | ||
| On-State Drain Current | ID(ON) | -0.25 | A | VGS = -5V, VDS = -25V | 2 | ||
| On-State Drain Current | ID(ON) | -0.75 | A | VGS = -10V, VDS = -25V | 2 | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 9 | 15 | Ω | VGS = -5V, ID = -100 mA | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 7 | 12 | Ω | VGS = -10V, ID = -200 mA | 2 | |
| Change in RDS(ON) with Temperature | ΔRDS(ON) | 1.7 | %/°C | VGS = -10V, ID = -200 mA (Note 1) | 2 | ||
| Forward Transconductance | GFS | 100 | 150 | mmho | VDS = -25V, ID = -400 mA | 3 | |
| Input Capacitance | CISS | 85 | 150 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | 3 | |
| Common Source Output Capacitance | COSS | 30 | 85 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | 3 | |
| Reverse Transfer Capacitance | CRSS | 10 | 35 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | 3 | |
| Turn-On Delay Time | td(ON) | 10 | ns | VDD = -25V, ID = -750 mA, RGEN = 25Ω | 3 | ||
| Rise Time | tr | 15 | ns | VDD = -25V, ID = -750 mA, RGEN = 25Ω | 3 | ||
| Turn-Off Delay Time | td(OFF) | 20 | ns | VDD = -25V, ID = -750 mA, RGEN = 25Ω | 3 | ||
| Fall Time | tf | 16 | ns | VDD = -25V, ID = -750 mA, RGEN = 25Ω | 3 | ||
| Diode Forward Voltage Drop | VSD | -1.8 | V | VGS = 0V, ISD = -500 mA (Note 1) | 3 | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = -500 mA | 3 | ||
| Gate-to-Source Voltage | -20 | 20 | V | 2 | |||
| Operating Ambient Temperature (abs max) | TA | -55 | 150 | °C | 2 | ||
| Storage Temperature (abs max) | TS | -55 | 150 | °C | 2 | ||
| Operating Ambient Temperature | TA | -55 | 150 | °C | 3 | ||
| Storage Temperature | TS | -55 | 150 | °C | 3 | ||
| Package Thermal Resistance, 3-lead TO-92 | θJA | 132 | °C/W | 3 | |||
| Continuous Drain Current | ID | -175 | mA | 3-lead TO-92, limited by maximum rated TJ | 3 | ||
| Pulsed Drain Current | ID(pulsed) | -800 | mA | 3-lead TO-92 | 3 | ||
| Power Dissipation | PD | 1 | W | TA = 25°C, 3-lead TO-92 | 3 | ||
| Continuous Reverse Drain Current | IDR | -175 | mA | 3-lead TO-92, limited by maximum rated TJ | 3 | ||
| Pulsed Reverse Drain Current | IDRM | -800 | mA | 3-lead TO-92 | 3 |
CAD (KiCad official)
- Symbol:
TP0620N3-G - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
tp0620n3-g-etched.step/tp0620n3-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tp0620n3-g.step/tp0620n3-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Microchip Tech datasheet (14 pp, sha256
acb583d46a78d6c2, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TP0620N3-G
**Microchip Tech** · MOSFETs · TO-92-3
TP0620N3-G from Microchip Tech, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel enhancement-mode vertical DMOS FET. |
| 2 | Gate | input | Gate terminal with high input impedance; absolute maximum gate-to-source voltage is ±20V and threshold is -1V to -2.4V at ID = -1 mA. |
| 3 | Drain | passive | Drain terminal with drain-to-source breakdown voltage of -200V minimum and continuous drain current of -175 mA in TO-92. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | TO-92-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -200 | | | V | VGS = 0V, ID = -2 mA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -2.4 | V | VGS = VDS, ID = -1 mA | 2 |
| Change in VGS(th) with Temperature | ΔVGS(th) | | | -4.5 | mV/°C | VGS = VDS, ID = -1 mA (Note 1) | 2 |
| Gate Body Leakage Current | IGSS | | | -100 | nA | VGS = ± 20V, VDS = 0V | 2 |
| Zero-Gate Voltage Drain Current | IDSS | | | -10 | µA | VGS = 0V, VDS = Maximum rating | 2 |
| Zero-Gate Voltage Drain Current (125°C) | IDSS | | | -1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) | 2 |
| On-State Drain Current | ID(ON) | -0.25 | | | A | VGS = -5V, VDS = -25V | 2 |
| On-State Drain Current | ID(ON) | -0.75 | | | A | VGS = -10V, VDS = -25V | 2 |
| Static Drain-to-Source On-State Resistance | RDS(ON) | | 9 | 15 | Ω | VGS = -5V, ID = -100 mA | 2 |
| Static Drain-to-Source On-State Resistance | RDS(ON) | | 7 | 12 | Ω | VGS = -10V, ID = -200 mA | 2 |
| Change in RDS(ON) with Temperature | ΔRDS(ON) | | | 1.7 | %/°C | VGS = -10V, ID = -200 mA (Note 1) | 2 |
| Forward Transconductance | GFS | 100 | 150 | | mmho | VDS = -25V, ID = -400 mA | 3 |
| Input Capacitance | CISS | | 85 | 150 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | 3 |
| Common Source Output Capacitance | COSS | | 30 | 85 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | 3 |
| Reverse Transfer Capacitance | CRSS | | 10 | 35 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | 3 |
| Turn-On Delay Time | td(ON) | | | 10 | ns | VDD = -25V, ID = -750 mA, RGEN = 25Ω | 3 |
| Rise Time | tr | | | 15 | ns | VDD = -25V, ID = -750 mA, RGEN = 25Ω | 3 |
| Turn-Off Delay Time | td(OFF) | | | 20 | ns | VDD = -25V, ID = -750 mA, RGEN = 25Ω | 3 |
| Fall Time | tf | | | 16 | ns | VDD = -25V, ID = -750 mA, RGEN = 25Ω | 3 |
| Diode Forward Voltage Drop | VSD | | | -1.8 | V | VGS = 0V, ISD = -500 mA (Note 1) | 3 |
| Reverse Recovery Time | trr | | 300 | | ns | VGS = 0V, ISD = -500 mA | 3 |
| Gate-to-Source Voltage | | -20 | | 20 | V | | 2 |
| Operating Ambient Temperature (abs max) | TA | -55 | | 150 | °C | | 2 |
| Storage Temperature (abs max) | TS | -55 | | 150 | °C | | 2 |
| Operating Ambient Temperature | TA | -55 | | 150 | °C | | 3 |
| Storage Temperature | TS | -55 | | 150 | °C | | 3 |
| Package Thermal Resistance, 3-lead TO-92 | θJA | | 132 | | °C/W | | 3 |
| Continuous Drain Current | ID | | | -175 | mA | 3-lead TO-92, limited by maximum rated TJ | 3 |
| Pulsed Drain Current | ID(pulsed) | | | -800 | mA | 3-lead TO-92 | 3 |
| Power Dissipation | PD | | | 1 | W | TA = 25°C, 3-lead TO-92 | 3 |
| Continuous Reverse Drain Current | IDR | | | -175 | mA | 3-lead TO-92, limited by maximum rated TJ | 3 |
| Pulsed Reverse Drain Current | IDRM | | | -800 | mA | 3-lead TO-92 | 3 |
## CAD (KiCad official)
- Symbol: `TP0620N3-G`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files: `tp0620n3-g-etched.step` / `tp0620n3-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tp0620n3-g.step` / `tp0620n3-g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Microchip Tech datasheet](docs/tp0620n3-g-datasheet.pdf) (14 pp, sha256 `acb583d46a78d6c2`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tp0620n3-g-datasheet.pdf)