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TP0610K-T1-E3
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Vishay Intertech MOSFETs, SOT-23. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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TP0610K-T1-E3
Vishay Intertech · MOSFETs · SOT-23
TP0610K-T1-E3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the datasheet rates gate-source voltage VGS at ±20 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; the datasheet's VGS and VDS ratings are referenced to this terminal. |
| 3 | D | passive | Drain of the MOSFET, rated at -60 V drain-source voltage and -185 mA continuous drain current at TA = 25 °C; per AN807 it also provides the thermal path from the package to the PC board. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TA = 25 °C) | ID | -185 | mA | TA = 25 °C | 1 | ||
| Continuous Drain Current (TA = 100 °C) | ID | -115 | mA | TA = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -800 | mA | 1 | |||
| Power Dissipation (TA = 25 °C) | PD | 350 | mW | TA = 25 °C | 1 | ||
| Power Dissipation (TA = 100 °C) | PD | 140 | mW | TA = 100 °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 350 | °C/W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = -10 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Gate-Body Leakage | IGSS | -200 | 200 | nA | VDS = 0 V, VGS = ± 10 V | 2 | |
| Gate-Body Leakage | IGSS | -500 | 500 | nA | VDS = 0 V, VGS = ± 10 V, TJ = 85 °C | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 5 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -25 | VDS = -60 V, VGS = 0 V | 2 | |||
| Zero Gate Voltage Drain Current | IDSS | -250 | VDS = -60 V, VGS = 0 V, TJ = 85 °C | 2 | |||
| On-State Drain Current | ID(on) | -50 | mA | VGS = -10 V, VDS = -4.5 V | 2 | ||
| On-State Drain Current | ID(on) | -600 | mA | VGS = -10 V, VDS = -10 V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 10 | Ω | VGS = -4.5 V, ID = -25 mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 6 | Ω | VGS = -10 V, ID = -500 mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 9 | Ω | VGS = -10 V, ID = -500 mA, TJ = 125 °C | 2 | ||
| Diode Forward Voltage | VSD | -1.4 | V | IS = -200 mA, VGS = 0 V | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pattern, a plane of copper overlies the drain pin and provides | 6 |
CAD (KiCad official)
- Symbol:
TP0610K-T1-E3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tp0610k-t1-e3-etched.step/tp0610k-t1-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tp0610k-t1-e3.step/tp0610k-t1-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
3d676d89ce225ca7, retrieved 2026-10-22, tier: manufacturer) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TP0610K-T1-E3
**Vishay Intertech** · MOSFETs · SOT-23
TP0610K-T1-E3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the datasheet rates gate-source voltage VGS at ±20 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; the datasheet's VGS and VDS ratings are referenced to this terminal. |
| 3 | D | passive | Drain of the MOSFET, rated at -60 V drain-source voltage and -185 mA continuous drain current at TA = 25 °C; per AN807 it also provides the thermal path from the package to the PC board. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (TA = 25 °C) | ID | | | -185 | mA | TA = 25 °C | 1 |
| Continuous Drain Current (TA = 100 °C) | ID | | | -115 | mA | TA = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | -800 | mA | | 1 |
| Power Dissipation (TA = 25 °C) | PD | | | 350 | mW | TA = 25 °C | 1 |
| Power Dissipation (TA = 100 °C) | PD | | | 140 | mW | TA = 100 °C | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 350 | °C/W | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Drain-Source Voltage | VDS | | | -60 | V | | 1 |
| Drain-Source Breakdown Voltage | VDS | -60 | | | V | VGS = 0 V, ID = -10 µA | 2 |
| Gate-Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage | IGSS | -10 | | 10 | µA | VDS = 0 V, VGS = ± 20 V | 2 |
| Gate-Body Leakage | IGSS | -200 | | 200 | nA | VDS = 0 V, VGS = ± 10 V | 2 |
| Gate-Body Leakage | IGSS | -500 | | 500 | nA | VDS = 0 V, VGS = ± 10 V, TJ = 85 °C | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 5 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -25 | | VDS = -60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -250 | | VDS = -60 V, VGS = 0 V, TJ = 85 °C | 2 |
| On-State Drain Current | ID(on) | -50 | | | mA | VGS = -10 V, VDS = -4.5 V | 2 |
| On-State Drain Current | ID(on) | -600 | | | mA | VGS = -10 V, VDS = -10 V | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 10 | Ω | VGS = -4.5 V, ID = -25 mA | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 6 | Ω | VGS = -10 V, ID = -500 mA | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 9 | Ω | VGS = -10 V, ID = -500 mA, TJ = 125 °C | 2 |
| Diode Forward Voltage | VSD | | | -1.4 | V | IS = -200 mA, VGS = 0 V | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | pattern, a plane of copper overlies the drain pin and provides | 6 |
## CAD (KiCad official)
- Symbol: `TP0610K-T1-E3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `tp0610k-t1-e3-etched.step` / `tp0610k-t1-e3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tp0610k-t1-e3.step` / `tp0610k-t1-e3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](docs/tp0610k-t1-e3-datasheet.pdf) (8 pp, sha256 `3d676d89ce225ca7`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tp0610k-t1-e3-datasheet.pdf)