# TNM3K50WX

**Shenzhen JingYang** · MOSFETs · SOT-323

TNM3K50WX from Shenzhen JingYang, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with a gate threshold voltage VGS(th) of 0.6 V min to 1.0 V max at VDS=VGS, ID=250 µA. |
| 2 | S | passive | Source; the MOSFET source terminal, with continuous drain current of 0.3 A and pulsed drain current of 1.2 A. |
| 3 | D | passive | Drain; drain-source voltage rated 50 V, with RDS(ON) below 2.5 Ω at VGS=10 V and below 3.5 Ω at VGS=4.5 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 50 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 0.3 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 1.2 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 0.2 | W | @25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 50 |  |  | V | VGS=0V ID=250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=50V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -500 | 110 | 500 | nA | VGS=±10V,VDS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 | 0.3 | 10 | uA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.6 | 1 |  | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  |  | 3.5 | Ω | VGS=4.5V, ID=0.2A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  |  | 2.5 | Ω | VGS=10V, ID=0.2A | 2 |
| Forward Transconductance | gFS | 0.2 |  |  | S | VDS=10V,ID=0.2A | 2 |
| Turn-on Delay Time | td(on) |  |  | 5 | nS |  | 2 |
| Turn-on Rise Time | tr |  |  | 5 | nS |  | 2 |
| Turn-Off Delay Time | td(off) |  |  | 60 | nS |  | 2 |
| Turn-Off Fall Time | tf |  |  | 35 | nS |  | 2 |
| Total Gate Charge | Qg |  |  | 2.4 | nC | VDS=25V,ID=0.2A, VGS=10V | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 620 | °C/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |

## CAD (KiCad official)

- Symbol: `TNM3K50WX`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `tnm3k50wx-etched.step` / `tnm3k50wx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tnm3k50wx.step` / `tnm3k50wx.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shenzhen JingYang datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603131197094842368) (6 pp, sha256 `3d1f009ec71562da`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tnm3k50wx-datasheet.pdf)