# TNM2K30KX

**Shenzhen JingYang** · MOSFETs · SOT-23

TNM2K30KX from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±12 V (VGS). |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, for a device rated at a drain-source voltage of 30 V (VDS). |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, with a continuous drain current rating of 0.3 A (ID) and a power dissipation of 0.35 W (PD). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 0.3 | A |  | 1 |
| Power Dissipation | PD |  |  | 0.35 | W |  | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 357 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 28V, VGS = 0V | 2 |
| Gate-Source Leakage Current | IGSS | -10 |  | 10 | µA | VGS = ±8V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.6 |  | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 3 | Ω | VGS = 1.2V, ID = 100mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 2 | Ω | VGS = 1.5V, ID = 200mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 1.1 | 2 | Ω | VGS = 1.8V, ID = 200mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 0.85 | 1.6 | Ω | VGS = 2.5V, ID = 200mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 0.75 | 1.2 | Ω | VGS = 4.5V, ID = 500mA | 2 |

## CAD (KiCad official)

- Symbol: `TNM2K30KX`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `tnm2k30kx-etched.step` / `tnm2k30kx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tnm2k30kx.step` / `tnm2k30kx.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shenzhen JingYang datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603030858048172032) (5 pp, sha256 `2243ab05886265b9`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tnm2k30kx-datasheet.pdf)