component
TNM02K100KX
Public Made by Adomby adom
Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| tnm02k100kx-etched.glb | 17d ago |
| tnm02k100kx-etched.step | 17d ago |
| tnm02k100kx-hero.glb | 17d ago |
| tnm02k100kx-hero.overlay.json | 17d ago |
| tnm02k100kx.glb | 17d ago |
| tnm02k100kx.kicad_mod | 17d ago |
| tnm02k100kx.kicad_sym | 17d ago |
| tnm02k100kx.lbr | 17d ago |
| tnm02k100kx.step | 17d ago |
TNM02K100KX
Shenzhen JingYang · MOSFETs · SOT-23
TNM02K100KX from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 1.0 to 3.0 V at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain; drain-source voltage up to 100 V and continuous drain current 2.2 A at TC=25℃ (12 A pulsed). |
| 3 | S | passive | Source; connects to the body diode anode, which is rated for 3 A continuous forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 250 | 280 | mΩ | VGS =10V, ID =2A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 260 | 310 | mΩ | VGS =4.5V, ID =1A | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =100V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V,VGS = ±20V | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 3 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 12 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS=1A | 2 | ||
| Drain-Source Voltage | VDSS | 100 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 2.2 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 1.5 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | note1 | 1 | ||
| Power Dissipation | PD | 2.5 | W | TA = 25℃ | 1 | ||
| Power Dissipation | PD | 3.9 | W | TA = 25℃ | 1 | ||
| Power Dissipation | PD | 5 | W | TA = 25℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 50 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 32 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 25 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
TNM02K100KX - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tnm02k100kx-etched.step/tnm02k100kx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tnm02k100kx.step/tnm02k100kx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (5 pp, sha256
27b1f58868fc032d, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).