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Contents

README

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TN815-800B-TR

ST(意法半导体) · Thyristors (SCR)/Modules · DPAK

TN815-800B-TR from ST(意法半导体), in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SCR; current returns here when the device is on, with VDRM/VRRM of 800 V for TN815-800B.
2 A passive Anode of the SCR, also connected to the metal tab; carries up to 8 A rms on-state current (IT(RMS), TC = 110 °C).
3 G input Gate trigger input; IGT is 2 mA min to 15 mA max at VD = 12 V, RL = 140 Ω, and maximum peak reverse gate voltage VRGM is 5 V.

Key specifications

Parameter Value
Manufacturer ST(意法半导体)
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current (180° conduction angle) IT(RMS) 8 A TC = 110 °C 2
Average on-state current (180° conduction angle) IT(AV) 5 A TC = 110 °C 2
Non repetitive surge peak on-state current (TN815 column) ITSM 100 A tp = 8.3 ms, Tj = 25 °C 2
Non repetitive surge peak on-state current (TN815 column) ITSM 95 A tp = 10 ms 2
I2t value for fusing (TN815 column) I2t 45 A2s tp = 10 ms, Tj = 25 °C 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 60 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Maximum peak reverse gate voltage (for TN8x5 and TYN608 only) VRGM 5 V 2
Gate trigger current (standard, TN815 column) IGT 2 15 mA VD = 12 V, RL = 140 Ω 3
Gate trigger voltage VGT 1.3 V 3
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C 3
Holding current (TN815 column) IH 40 mA IT = 100 mA, gate open 3
Latching current (TN815 column) IL 50 mA IG = 1.2 IGT 3
Critical rate of rise of off-state voltage (TN815 column) dV/dt 150 V/µs VD = 67% VDRM, gate open, Tj = 125 °C 3
On-state voltage VTM 1.6 V ITM = 16 A, tp = 380 μs, Tj = 25 °C 3
Threshold voltage Vt0 0.85 V Tj = 125 °C 3
Dynamic resistance Rd 46 mΩ Tj = 125 °C 3
Repetitive peak off-state current (leakage at Tj = 25 °C) IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25 °C 3
Repetitive peak off-state current (leakage at Tj = 125 °C) IDRM/IRRM 2 mA VDRM = VRRM, Tj = 125 °C 3
Junction to case (DC), IPAK / DPAK / TO-220AB Rth(j-c) 1.3 °C/W DC 3
Junction to ambient, DPAK Rth(j-a) 70 °C/W S = 0.5 cm² copper surface under tab 3

CAD (KiCad official)

  • Symbol: TN815-800B-TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: tn815-800b-tr-etched.step / tn815-800b-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tn815-800b-tr.step / tn815-800b-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ST(意法半导体) datasheet (20 pp, sha256 677c856e0293d8af, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF