component
TN2404K-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TN2404K-T1-E3-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
TN2404K-T1-E3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V with a threshold of 1.5 V to 4.5 V (ID = 250 µA). |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source (diode) current is rated at 0.6 A (5 s). |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 200 V with a continuous drain current of 0.6 A (5 s) and 2.5 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current 5 s | ID | 0.6 | A | TJ = 150 °C, TA = 25 °C, 5 s | 1 | ||
| Continuous Drain Current Steady State | ID | 0.45 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current 5 s | ID | 0.5 | A | TJ = 150 °C, TA = 70 °C, 5 s | 1 | ||
| Continuous Drain Current Steady State | ID | 0.35 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | 2.5 | A | 1 | |||
| Avalanche Current | IAS | 2.5 | A | L = 0.1 mH | 1 | ||
| Single Avalanche Energy | EAS | 50 | mJ | L = 0.1 mH | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 0.6 | A | 1 | |||
| Power Dissipation 5 s | PD | 1.55 | W | TA = 25 °C, 5 s | 1 | ||
| Power Dissipation Steady State | PD | 1.03 | W | TA = 25 °C, steady state | 1 | ||
| Power Dissipation 5 s | PD | 1.2 | W | TA = 70 °C, 5 s | 1 | ||
| Power Dissipation Steady State | PD | 0.87 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient 5 s | RthJA | 80 | 100 | °C/W | t ≤ 5 s | 1 | |
| Junction-to-Ambient Steady State | RthJA | 130 | 170 | °C/W | Steady state | 1 | |
| Junction-to-Foot Steady State | RthJF | 45 | 55 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 1.5 | 4.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 75 | µA | VDS = 100 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | 2.5 | A | VDS ≥ 15 V, VGS = 10 V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 1.4 | Ω | VGS = 10 V, ID = 0.5 A | 2 | ||
| Forward Transconductance | gfs | 4 | S | VDS = 15 V, ID = 0.5 A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS = 1 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 3 | 5 | nC | VDS = 100 V, VGS = 10 V, ID = 0.5 A | 2 | |
| Gate Resistance | Rg | 0.5 | 1.3 | 2.4 | Ω | 2 | |
| Turn-On Delay Time | td(on) | 7 | 11 | ns | VDD = 100 V, RL = 33 Ω, ID ≅ 0.2 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 10 | 15 | ns | VDD = 100 V, RL = 33 Ω, ID ≅ 0.2 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 9 | 15 | ns | VDD = 100 V, RL = 33 Ω, ID ≅ 0.2 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 11 | 15 | ns | VDD = 100 V, RL = 33 Ω, ID ≅ 0.2 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 50 | 100 | ns | IF = 0.5 A, dI/dt = 100 A/µs | 2 | |
| Gate-Source Charge | Qgs | 0.37 | nC | VDS = 100 V, VGS = 10 V, ID = 0.5 A | 2 | ||
| Gate-Drain Charge | Qgd | 1.45 | nC | VDS = 100 V, VGS = 10 V, ID = 0.5 A | 2 |
CAD (KiCad official)
- Symbol:
TN2404K-T1-E3-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
tn2404k-t1-e3-vb-etched.step/tn2404k-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tn2404k-t1-e3-vb.step/tn2404k-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
522dd4e8b38f3c8a, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TN2404K-T1-E3-VB
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
TN2404K-T1-E3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V with a threshold of 1.5 V to 4.5 V (ID = 250 µA). |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source (diode) current is rated at 0.6 A (5 s). |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 200 V with a continuous drain current of 0.6 A (5 s) and 2.5 A pulsed. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 200 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current 5 s | ID | | | 0.6 | A | TJ = 150 °C, TA = 25 °C, 5 s | 1 |
| Continuous Drain Current Steady State | ID | | | 0.45 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 |
| Continuous Drain Current 5 s | ID | | | 0.5 | A | TJ = 150 °C, TA = 70 °C, 5 s | 1 |
| Continuous Drain Current Steady State | ID | | | 0.35 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 |
| Pulsed Drain Current | IDM | | | 2.5 | A | | 1 |
| Avalanche Current | IAS | | | 2.5 | A | L = 0.1 mH | 1 |
| Single Avalanche Energy | EAS | | | 50 | mJ | L = 0.1 mH | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 0.6 | A | | 1 |
| Power Dissipation 5 s | PD | | | 1.55 | W | TA = 25 °C, 5 s | 1 |
| Power Dissipation Steady State | PD | | | 1.03 | W | TA = 25 °C, steady state | 1 |
| Power Dissipation 5 s | PD | | | 1.2 | W | TA = 70 °C, 5 s | 1 |
| Power Dissipation Steady State | PD | | | 0.87 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient 5 s | RthJA | | 80 | 100 | °C/W | t ≤ 5 s | 1 |
| Junction-to-Ambient Steady State | RthJA | | 130 | 170 | °C/W | Steady state | 1 |
| Junction-to-Foot Steady State | RthJF | | 45 | 55 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 200 | | | V | VGS = 0 V, ID = 1 mA | 2 |
| Gate-Threshold Voltage | VGS(th) | 1.5 | | 4.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 75 | µA | VDS = 100 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | 2.5 | | | A | VDS ≥ 15 V, VGS = 10 V | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 1.4 | Ω | VGS = 10 V, ID = 0.5 A | 2 |
| Forward Transconductance | gfs | | 4 | | S | VDS = 15 V, ID = 0.5 A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS = 1 A, VGS = 0 V | 2 |
| Total Gate Charge | Qg | | 3 | 5 | nC | VDS = 100 V, VGS = 10 V, ID = 0.5 A | 2 |
| Gate Resistance | Rg | 0.5 | 1.3 | 2.4 | Ω | | 2 |
| Turn-On Delay Time | td(on) | | 7 | 11 | ns | VDD = 100 V, RL = 33 Ω, ID ≅ 0.2 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Rise Time | tr | | 10 | 15 | ns | VDD = 100 V, RL = 33 Ω, ID ≅ 0.2 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 9 | 15 | ns | VDD = 100 V, RL = 33 Ω, ID ≅ 0.2 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Fall Time | tf | | 11 | 15 | ns | VDD = 100 V, RL = 33 Ω, ID ≅ 0.2 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Source-Drain Reverse Recovery Time | trr | | 50 | 100 | ns | IF = 0.5 A, dI/dt = 100 A/µs | 2 |
| Gate-Source Charge | Qgs | | 0.37 | | nC | VDS = 100 V, VGS = 10 V, ID = 0.5 A | 2 |
| Gate-Drain Charge | Qgd | | 1.45 | | nC | VDS = 100 V, VGS = 10 V, ID = 0.5 A | 2 |
## CAD (KiCad official)
- Symbol: `TN2404K-T1-E3-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `tn2404k-t1-e3-vb-etched.step` / `tn2404k-t1-e3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tn2404k-t1-e3-vb.step` / `tn2404k-t1-e3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/tn2404k-t1-e3-vb-datasheet.pdf) (7 pp, sha256 `522dd4e8b38f3c8a`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tn2404k-t1-e3-vb-datasheet.pdf)