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TN1605H-6T

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STMicroelectronics Thyristors (SCR)/Modules, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TN1605H-6T

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB-3

TN1605H-6T from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SCR; RMS on-state current IT(RMS) is 16 A at Tc = 133 °C.
2 A passive Anode of the SCR, also connected to the tab; VDRM/VRRM is 600 V at Tj = 150 °C.
3 G input Gate trigger input; IGT is 6 mA max (VD = 12 V, RL = 33 Ω) and the maximum peak reverse gate voltage VRGM is 5 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current IT(RMS) 16 A 180° conduction angle, Tc = 133 °C 2
Average on-state current IT(AV) 10 A 180° conduction angle, Tc = 133 °C 2
Average on-state current IT(AV) 8 A 180° conduction angle, Tc = 138 °C 2
Average on-state current IT(AV) 6 A 180° conduction angle, Tc = 142 °C 2
Non repetitive surge peak on-state current ITSM 153 A tp = 8.3 ms, Tj initial = 25 °C 2
Non repetitive surge peak on-state current ITSM 140 A tp = 10 ms 2
I2t value for fusing I2t 98 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 100 A/µs IG = 2 x IGT, tr ≤ 100 ns, f = 60 Hz 2
Repetitive peak off-state voltage VDRM/VRRM 600 V Tj = 150 °C 2
Non repetitive surge peak off-state voltage VDSM/VRSM 700 V tp = 10 ms 2
Average gate power dissipation PG(AV) 1 W Tj = 150 °C 2
Maximum peak reverse gate voltage VRGM 5 V 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 150 °C 2
Peak gate power dissipation PGM 40 W tp = 20 µs, Tj = 150 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 150 °C 2
Maximum lead temperature for soldering TL 260 °C during 10 s 2
Gate trigger current IGT 3.5 4.5 6 mA VD = 12 V, RL = 33 Ω, Tj = 25 °C 2
Gate trigger voltage VGT 1.3 V 2
Gate non-trigger voltage VGD 0.15 V VD = 600 V, RL = 3.3 kΩ, Tj = 150 °C 2
Latching current IL 40 mA IG = 1.2 x IGT, Tj = 25 °C 2
Holding current IH 20 mA IT = 500 mA, gate open 2
On-state voltage VTM 1.6 V ITM = 32 A, tp = 380 µs, Tj = 25 °C 3
Threshold on-state voltage VTO 0.82 V Tj = 150 °C 3
Dynamic resistance RD 25 mΩ Tj = 150 °C 3
Repetitive peak off-state current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25 °C 3
Repetitive peak off-state current IDRM/IRRM 1.5 mA VDRM = VRRM, Tj = 125 °C 3
Repetitive peak off-state current IDRM/IRRM 3.1 mA VDRM = VRRM, Tj = 150 °C 3
Junction to case (DC) thermal resistance Rth(j-c) 1.1 °C/W DC 3
Junction to ambient (DC) thermal resistance Rth(j-a) 60 °C/W DC 3

CAD (KiCad official)

  • Symbol: TN1605H-6T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: tn1605h-6t-etched.step / tn1605h-6t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tn1605h-6t.step / tn1605h-6t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (9 pp, sha256 6a3f3a0f6fe8b394, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF