component
TN1215-800B
Public Made by Adomby adom
JSMSEMI Thyristors (SCR)/Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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TN1215-800B
JSMSEMI · Thyristors (SCR)/Modules · TO-252
TN1215-800B from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode (K) of the unidirectional SCR, which carries the on-state current up to IT(RMS) 12 A at Tc=90℃. |
| 2 | A | passive | Anode (A2), connected to the tab, which blocks VDRM/VRRM of 800 V at Tj=25℃. |
| 3 | G | input | Gate trigger input: IGT max 15 mA and VGT max 1.5 V at VD=12V, RL=100Ω, with peak gate current IGM 4 A (tp=20us). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| RMS on-state current (Tc=90℃) | IT(RMS) | 12 | A | Tc=90℃ | 1 | ||
| Non-repetitive surge on-state current | ITSM | 120 | A | F=50HZ, t=20ms | 1 | ||
| I2t limit value | I2t | 144 | A2S | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | di/dt | 50 | A/us | Tj=125℃ | 1 | ||
| Repetitive peak off-state and reverse voltage | VDRM/VRRM | 800 | V | Tj=25℃ | 1 | ||
| Peak gate current | IGM | 4 | A | tp=20us, Tj=125℃ | 1 | ||
| Average gate power dissipation | PG(AV) | 1 | W | Tj=125℃ | 1 | ||
| Storage temperature | Tstg | -40 | 150 | ℃ | 1 | ||
| Effective junction temperature | Tj | -40 | 125 | ℃ | 1 | ||
| Gate trigger current | IGT | 15 | mA | VD=12V RL=100Ω, quadrant I | 2 | ||
| Gate trigger voltage | VGT | 1.5 | V | VD=12V RL=100Ω, quadrant I | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | Tj=125℃ | 2 | ||
| Holding current | IH | 30 | mA | IT=0.5A | 2 | ||
| Latching current | IL | 40 | mA | IG=1.2IGT, quadrant I | 2 | ||
| Critical rate of rise of off-state voltage | dv/dt | 500 | V/us | VD=2/3VDRM, Tj=125℃ | 2 | ||
| Peak on-state voltage | VTM | 1.5 | V | ITM=36A, Tj=25℃ | 2 | ||
| Threshold voltage | VT0 | 0.86 | V | Tj=125℃ | 2 | ||
| Slope resistance | Rd | 36.6 | mΩ | Tj=125℃ | 2 | ||
| Peak off-state current | IDRM | 5 | uA | Tj=25℃ | 2 | ||
| Peak reverse current | IRRM | 1 | mA | Tj=125℃ | 2 | ||
| Junction-to-case thermal resistance | Rth(j-c) | 1.75 | ℃/W | BTB | 2 |
CAD (KiCad official)
- Symbol:
TN1215-800B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
tn1215-800b-etched.step/tn1215-800b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tn1215-800b.step/tn1215-800b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (6 pp, sha256
260b6b7415cd48ee, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).