component
TN0104N3-G
Public Made by Adomby adom
Microchip Tech MOSFETs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TN0104N3-G
Microchip Tech · MOSFETs · TO-92
TN0104N3-G from Microchip Tech, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel enhancement-mode vertical DMOS FET (TO-92 Table 3-1). |
| 2 | Gate | input | Gate terminal with threshold VGS(th) of 0.6V to 1.6V at ID = 500 µA and absolute maximum gate-to-source voltage of ±20V. |
| 3 | Drain | passive | Drain terminal with minimum drain-to-source breakdown voltage BVDSS of 40V at VGS = 0V, ID = 1 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | TO-92 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | VGS = 0V, ID = 1 mA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 1.6 | V | VGS = VDS, ID = 500 µA | 2 | |
| Change in VGS(th) with Temperature | ΔVGS(th) | -3.8 | -5 | mV/°C | VGS = VDS, ID = 1 mA (Note 1) | 2 | |
| Gate Body Leakage Current | IGSS | 0.1 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Zero-Gate Voltage Drain Current | IDSS | 1 | µA | VGS = 0V, VDS = Maximum rating | 2 | ||
| Zero-Gate Voltage Drain Current (125°C) | IDSS | 100 | µA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) | 2 | ||
| On-State Drain Current | ID(ON) | 0.5 | 1.1 | A | VGS = 5V, VDS = 20V | 2 | |
| On-State Drain Current | ID(ON) | 2 | 2.6 | A | VGS = 10V, VDS = 20V | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 2.3 | 2.5 | Ω | VGS = 5V, ID = 250 mA | 2 | |
| Static Drain-to-Source On-State Resistance (TO-92) | RDS(ON) | 1.5 | 1.8 | Ω | VGS = 10V, ID = 1A | 2 | |
| Change in RDS(ON) with Temperature | ΔRDS(ON) | 0.7 | 1 | %/°C | VGS = 10V, ID = 1A (Note 1) | 2 | |
| Forward Transconductance | GFS | 340 | 450 | mmho | VDS = 20V, ID = 500 mA | 3 | |
| Input Capacitance | CISS | 70 | pF | VGS = 0V, VDS = 20V, f = 1 MHz | 3 | ||
| Common-Source Output Capacitance | COSS | 50 | pF | VGS = 0V, VDS = 20V, f = 1 MHz | 3 | ||
| Reverse Transfer Capacitance | CRSS | 15 | pF | VGS = 0V, VDS = 20V, f = 1 MHz | 3 | ||
| Turn-On Delay Time | td(ON) | 3 | 5 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | 3 | |
| Rise Time | tr | 7 | 8 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | 3 | |
| Turn-Off Delay Time | td(OFF) | 6 | 9 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | 3 | |
| Fall Time | tf | 5 | 8 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | 3 | |
| Diode Forward Voltage Drop (TO-92) | VSD | 1.2 | 1.8 | V | VGS = 0V, ISD = 1A (Note 1) | 3 | |
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Operating Ambient Temperature | TA | -55 | 150 | °C | 2 | ||
| Storage Temperature | TS | -55 | 150 | °C | 2 | ||
| Operating Ambient Temperature | TA | -55 | 150 | °C | 3 | ||
| Storage Temperature | TS | -55 | 150 | °C | 3 | ||
| Thermal Resistance, 3-lead TO-92 | θJA | 132 | °C/W | 3-lead TO-92 | 3 | ||
| Continuous Drain Current (TO-92) | ID | 450 | mA | 3-lead TO-92, limited by maximum rated TJ | 3 | ||
| Pulsed Drain Current (TO-92) | ID | 2.4 | A | 3-lead TO-92, pulsed | 3 | ||
| Power Dissipation (TO-92) | PD | 1 | W | TA = 25°C, 3-lead TO-92 | 3 | ||
| Reverse Drain Current (TO-92) | IDR | 450 | mA | 3-lead TO-92 | 3 | ||
| Pulsed Reverse Drain Current (TO-92) | IDRM | 2.4 | A | 3-lead TO-92 | 3 | ||
| On-State Drain Current | ID(ON) | 0.35 | A | VGS = 3V, VDS = 20V | 2 | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 5 | Ω | VGS = 3V, ID = 50 mA | 2 | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 1A | 3 |
CAD (KiCad official)
- Symbol:
TN0104N3-G - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
tn0104n3-g-etched.step/tn0104n3-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tn0104n3-g.step/tn0104n3-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Microchip Tech datasheet (14 pp, sha256
f4e5d4deec41795e, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TN0104N3-G
**Microchip Tech** · MOSFETs · TO-92
TN0104N3-G from Microchip Tech, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel enhancement-mode vertical DMOS FET (TO-92 Table 3-1). |
| 2 | Gate | input | Gate terminal with threshold VGS(th) of 0.6V to 1.6V at ID = 500 µA and absolute maximum gate-to-source voltage of ±20V. |
| 3 | Drain | passive | Drain terminal with minimum drain-to-source breakdown voltage BVDSS of 40V at VGS = 0V, ID = 1 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | TO-92 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS = 0V, ID = 1 mA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.6 | | 1.6 | V | VGS = VDS, ID = 500 µA | 2 |
| Change in VGS(th) with Temperature | ΔVGS(th) | | -3.8 | -5 | mV/°C | VGS = VDS, ID = 1 mA (Note 1) | 2 |
| Gate Body Leakage Current | IGSS | | 0.1 | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Zero-Gate Voltage Drain Current | IDSS | | | 1 | µA | VGS = 0V, VDS = Maximum rating | 2 |
| Zero-Gate Voltage Drain Current (125°C) | IDSS | | | 100 | µA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) | 2 |
| On-State Drain Current | ID(ON) | 0.5 | 1.1 | | A | VGS = 5V, VDS = 20V | 2 |
| On-State Drain Current | ID(ON) | 2 | 2.6 | | A | VGS = 10V, VDS = 20V | 2 |
| Static Drain-to-Source On-State Resistance | RDS(ON) | | 2.3 | 2.5 | Ω | VGS = 5V, ID = 250 mA | 2 |
| Static Drain-to-Source On-State Resistance (TO-92) | RDS(ON) | | 1.5 | 1.8 | Ω | VGS = 10V, ID = 1A | 2 |
| Change in RDS(ON) with Temperature | ΔRDS(ON) | | 0.7 | 1 | %/°C | VGS = 10V, ID = 1A (Note 1) | 2 |
| Forward Transconductance | GFS | 340 | 450 | | mmho | VDS = 20V, ID = 500 mA | 3 |
| Input Capacitance | CISS | | | 70 | pF | VGS = 0V, VDS = 20V, f = 1 MHz | 3 |
| Common-Source Output Capacitance | COSS | | | 50 | pF | VGS = 0V, VDS = 20V, f = 1 MHz | 3 |
| Reverse Transfer Capacitance | CRSS | | | 15 | pF | VGS = 0V, VDS = 20V, f = 1 MHz | 3 |
| Turn-On Delay Time | td(ON) | | 3 | 5 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | 3 |
| Rise Time | tr | | 7 | 8 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | 3 |
| Turn-Off Delay Time | td(OFF) | | 6 | 9 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | 3 |
| Fall Time | tf | | 5 | 8 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | 3 |
| Diode Forward Voltage Drop (TO-92) | VSD | | 1.2 | 1.8 | V | VGS = 0V, ISD = 1A (Note 1) | 3 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Operating Ambient Temperature | TA | -55 | | 150 | °C | | 2 |
| Storage Temperature | TS | -55 | | 150 | °C | | 2 |
| Operating Ambient Temperature | TA | -55 | | 150 | °C | | 3 |
| Storage Temperature | TS | -55 | | 150 | °C | | 3 |
| Thermal Resistance, 3-lead TO-92 | θJA | | 132 | | °C/W | 3-lead TO-92 | 3 |
| Continuous Drain Current (TO-92) | ID | | | 450 | mA | 3-lead TO-92, limited by maximum rated TJ | 3 |
| Pulsed Drain Current (TO-92) | ID | | | 2.4 | A | 3-lead TO-92, pulsed | 3 |
| Power Dissipation (TO-92) | PD | | | 1 | W | TA = 25°C, 3-lead TO-92 | 3 |
| Reverse Drain Current (TO-92) | IDR | | | 450 | mA | 3-lead TO-92 | 3 |
| Pulsed Reverse Drain Current (TO-92) | IDRM | | | 2.4 | A | 3-lead TO-92 | 3 |
| On-State Drain Current | ID(ON) | | 0.35 | | A | VGS = 3V, VDS = 20V | 2 |
| Static Drain-to-Source On-State Resistance | RDS(ON) | | 5 | | Ω | VGS = 3V, ID = 50 mA | 2 |
| Reverse Recovery Time | trr | | 300 | | ns | VGS = 0V, ISD = 1A | 3 |
## CAD (KiCad official)
- Symbol: `TN0104N3-G`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `tn0104n3-g-etched.step` / `tn0104n3-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tn0104n3-g.step` / `tn0104n3-g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Microchip Tech datasheet](docs/tn0104n3-g-datasheet.pdf) (14 pp, sha256 `f4e5d4deec41795e`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tn0104n3-g-datasheet.pdf)