component
TMP3055NF
Public Made by Adomby adom
Tritech-MOS MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 15d ago |
| viewers | 15d ago |
| package.json | 15d ago |
| page.json | 15d ago |
| README.md | 15d ago |
| tmp3055nf-etched.glb | 15d ago |
| tmp3055nf-etched.step | 15d ago |
| tmp3055nf-hero.glb | 15d ago |
| tmp3055nf-hero.overlay.json | 15d ago |
| tmp3055nf.glb | 15d ago |
| tmp3055nf.kicad_mod | 15d ago |
| tmp3055nf.kicad_sym | 15d ago |
| tmp3055nf.lbr | 15d ago |
| tmp3055nf.step | 15d ago |
TMP3055NF
Tritech-MOS · MOSFETs · DFN5x6-8L
TMP3055NF from Tritech-MOS, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; drain-source voltage rated -30V and continuous drain current -55A at TC=25℃ (with pins 2 and 3). |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage rated -30V and continuous drain current -55A at TC=25℃ (with pins 1 and 3). |
| 3 | S | passive | Source of the P-channel MOSFET; drain-source voltage rated -30V and continuous drain current -55A at TC=25℃ (with pins 1 and 2). |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage max ±20V, threshold -1.0V to -2.5V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDSS -30V, pulsed drain current -140A (shorted with pins 6, 7, 8). |
| 6 | D | passive | Drain of the P-channel MOSFET; VDSS -30V, pulsed drain current -140A (shorted with pins 5, 7, 8). |
| 7 | D | passive | Drain of the P-channel MOSFET; VDSS -30V, pulsed drain current -140A (shorted with pins 5, 6, 8). |
| 8 | D | passive | Drain of the P-channel MOSFET; VDSS -30V, pulsed drain current -140A (shorted with pins 5, 6, 7). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -55 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | -23 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | -140 | A | note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 78.8 | mJ | note2 | 1 | ||
| Power Dissipation | PD | 21.5 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 5.8 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS= VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 8.3 | 11 | mΩ | VGS =-10V, ID =-12A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 13 | 18 | mΩ | VGS =-4.5V, ID =-8A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -55 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -140 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS = 0V, IS = -35A | 2 | |
| Input Capacitance | Ciss | 2800 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 346 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 319 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 30 | nC | VDS= -15V, ID = -20A, VGS = -10V | 2 | ||
| Gate-Source Charge | Qgs | 5.3 | nC | VDS= -15V, ID = -20A, VGS = -10V | 2 | ||
| Gate-Drain (Miller) Charge | Qgd | 7.6 | nC | VDS= -15V, ID = -20A, VGS = -10V | 2 | ||
| Turn-on Delay Time | td(on) | 14 | ns | VDD = -15V, ID = -20A, VGS=-10V, RGEN=2.5Ω | 2 | ||
| Turn-on Rise Time | tr | 20 | ns | VDD = -15V, ID = -20A, VGS=-10V, RGEN=2.5Ω | 2 | ||
| Turn-off Delay Time | td(off) | 95 | ns | VDD = -15V, ID = -20A, VGS=-10V, RGEN=2.5Ω | 2 | ||
| Turn-off Fall Time | tf | 65 | ns | VDD = -15V, ID = -20A, VGS=-10V, RGEN=2.5Ω | 2 |
CAD (KiCad official)
- Symbol:
TMP3055NF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
tmp3055nf-etched.step/tmp3055nf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tmp3055nf.step/tmp3055nf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech-MOS datasheet (5 pp, sha256
ad15fd4fb00156eb, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).