component

TMP2004AI

Public Made by Adom

by adom

Tritech MOS MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 16d ago
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package.json Publish 0.1.0 · Ray 16d ago
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README.md Publish 0.1.0 · Ray 16d ago
tmp2004ai-etched.glb Publish 0.1.0 · Ray 16d ago
tmp2004ai-etched.step tmp2004ai: factory component page (tier=lcsc) · Ray 16d ago
tmp2004ai-hero.glb tmp2004ai: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
tmp2004ai-hero.overlay.json Publish 0.1.0 · Ray 16d ago
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tmp2004ai.kicad_mod Publish 0.1.0 · Ray 16d ago
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tmp2004ai.step Publish 0.1.0 · Ray 16d ago

TMP2004AI

Tritech MOS · MOSFETs · SOT-23

TMP2004AI from Tritech MOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±12 V.
2 S passive Source of the P-channel MOSFET; drain-source voltage rating is -20 V.
3 D passive Drain; continuous current -4.0 A at TA=25C and pulsed -10 A, with VDS rated -20 V.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TA=25C -4 A TA=25C, VGS @ -4.5V 1
Continuous Drain Current ID@TA=70C -3 A TA=70C, VGS @ -4.5V 1
Pulsed Drain Current IDM -10 A 1
Total Power Dissipation PD@TA=25C 0.9 W TA=25C 1
Total Power Dissipation PD@TA=70C 0.54 W TA=70C 1
Storage Temperature Range TSTG -55 150 C 1
Operating Junction Temperature Range TJ -55 150 C 1
Thermal Resistance Junction-Ambient RθJA 120 C/W Junction-Ambient; note 1 (1 inch2 FR-4 board, 2OZ copper) 1
Thermal Resistance Junction-Ambient (t<=10s) RθJA 95 C/W t<=10s; note 1 1
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 35 50 mΩ VGS=-4.5V, ID=-4.9A 2
Static Drain-Source On-Resistance RDS(ON) 48 65 mΩ VGS=-2.5V, ID=-3.4A 2
Gate Threshold Voltage VGS(th) -0.5 -1.2 -1 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-16V, VGS=0V, TJ=25C 2
Drain-Source Leakage Current IDSS -5 uA VDS=-16V, VGS=0V, TJ=55C 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Total Gate Charge (-4.5V) Qg 9.2 14.3 nC VDS=-15V, VGS=-4.5V, ID=-3A 2
Gate-Source Charge Qgs 1.89 2.6 nC 2
Gate-Drain Charge Qgd 3.1 4.3 nC 2
Turn-On Delay Time Td(on) 5.6 11.2 ns VDD=-10V, VGS=-4.5V, RG=3.3, ID=-3A 2
Rise Time Tr 40.8 73 ns 2
Turn-Off Delay Time Td(off) 33.6 67 ns 2
Fall Time Tf 18 36 ns 2
Input Capacitance Ciss 757 1200 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 104 160 pF 2
Reverse Transfer Capacitance Crss 98 151 pF 2
Continuous Source Current IS -4 A VG=VD=0V, Force Current; notes 1,4 2
Pulsed Source Current ISM -10 A notes 2,4 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25C; note 2 2

CAD (KiCad official)

  • Symbol: TMP2004AI
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: tmp2004ai-etched.step / tmp2004ai-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tmp2004ai.step / tmp2004ai.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (5 pp, sha256 48746ab4f9d393d2, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF